Hooman Rashtian
Hooman Rashtian
Assistant Professor of Teaching, University of California, Davis
Verified email at ucdavis.edu
Title
Cited by
Cited by
Year
A 1.2-pJ/bit 16-Gb/s 60-GHz OOK transmitter in 65-nm CMOS for wireless network-on-chip
X Yu, SP Sah, H Rashtian, S Mirabbasi, PP Pande, D Heo
IEEE Transactions on Microwave Theory and Techniques 62 (10), 2357-2369, 2014
852014
An 18.7-Gb/s 60-GHz OOK demodulator in 65-nm CMOS for wireless network-on-chip
X Yu, H Rashtian, S Mirabbasi, PP Pande, D Heo
IEEE Transactions on Circuits and Systems I: Regular Papers 62 (3), 799-806, 2015
652015
A low-noise high-sensitivity readout circuit for MEMS capacitive sensors
J Shiah, H Rashtian, S Mirabbasi
Proceedings of 2010 IEEE international symposium on circuits and systemsá…, 2010
292010
Applications of body biasing in multistage CMOS low-noise amplifiers
H Rashtian, S Mirabbasi
IEEE Transactions on Circuits and Systems I: Regular Papers 61 (6), 1638-1647, 2014
182014
A low-noise parasitic-insensitive switched-capacitor CMOS interface circuit for MEMS capacitive sensors
J Shiah, H Rashtian, S Mirabbasi
2011 IEEE 9th International New Circuits and systems conference, 470-473, 2011
162011
A low-power 2.4-GHz combined LNA–VCO structure in 0.13-Ám CMOS
T Taris, H Rashtian, AHM Shirazi, S Mirabbasi
Analog Integrated Circuits and Signal Processing 81 (3), 667-675, 2014
142014
A low-power 2.4-GHz combined LNA-VCO structure in 0.13-μm CMOS
T Taris, H Rashtian, AH Masnadi-Shirazi, S Mirabbasi
IEEE 11th International New Circuits and Systems Conference (NEWCAS), 1-4, 2013
142013
On the use of body biasing to improve linearity in low LO-power CMOS active mixers
H Rashtian, AHM Shirazi, S Mirabbasi
Microelectronics Journal 45 (8), 1026-1032, 2014
122014
A 4-stage 60-GHz low-noise amplifier in 65-nm CMOS with body biasing to control gain, linearity, and input matching
H Rashtian, S Mirabbasi, T Taris, Y Deval, JB Begueret
Analog Integrated Circuits and Signal Processing 73 (3), 757-768, 2012
102012
On the use of body biasing to control gain, linearity, and noise figure of a mm-wave CMOS LNA
H Rashtian, C Majek, S Mirabbasi, T Taris, Y Deval, JB Begueret
Proceedings of the 8th IEEE International NEWCAS Conference 2010, 333-336, 2010
82010
Gain Boosting in Distributed Amplifiers for Close-to-fmax Operation in Silicon
H Rashtian, O Momeni
IEEE Transactions on Microwave Theory and Techniques 67 (3), 1039-1049, 2019
62019
High-efficiency millimeter-wave single-ended and differential fundamental oscillators in CMOS
H Wang, J Chen, JTS Do, H Rashtian, X Liu
IEEE Journal of Solid-State Circuits 53 (8), 2151-2163, 2018
62018
On the design of combined LNA-VCO-mixer for low-power and low-voltage CMOS receiver front-ends
AHM Shirazi, H Rashtian, R Molavi, T Taris, HM Lavasani, S Mirabbasi
Microelectronics Journal 57, 34-47, 2016
62016
Using body biasing to control phase-noise of CMOS LC oscillators
H Rashtian, S Mirabbasi
Electronics letters 48 (3), 168-169, 2012
62012
Improving linearity of CMOS Gilbert-cell mixers using body biasing
H Rashtian, AHM Shirazi, S Mirabbasi
2012 IEEE 55th International Midwest Symposium on Circuits and Systemsá…, 2012
52012
A compact 213 GHz CMOS fundamental oscillator with 0.56 mW output power and 3.9% efficiency using a capacitive transformer
H Wang, D Kuzmenko, B Yu, Y Ye, JQ Gu, H Rashtian, X Liu
2017 IEEE MTT-S International Microwave Symposium (IMS), 1711-1714, 2017
42017
A 170nW CMOS wake-up receiver with− 60 dBm sensitivity using AlN high-Q piezoelectric resonators
ST Block, X Jiang, B Harris, C Cui, JS Fernandez, R Amirtharajah, ...
2017 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2017
42017
Monolithic AlN MEMS-CMOS resonant transformer for wake-up receivers
J Segovia-Fernandez, JM Tsai, J Do, H Rashtian, X Jiang, X Liu, Y Liu, ...
2017 IEEE International Ultrasonics Symposium (IUS), 1-4, 2017
32017
A 200-GHz triple-push oscillator in 65-nm CMOS with design techniques for enhancing DC-to-RF efficiency
H Rashtian, LPB Katehi, QJ Gu, X Liu
2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits iná…, 2016
32016
A Gain-Boosted 52–142 GHz Band-Pass Distributed Amplifier in O.13μm SiGe Process with fmaxof 210GHz
H Rashtian, O Momeni
2018 13th European Microwave Integrated Circuits Conference (EuMIC), 33-36, 2018
22018
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