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Bong-Ho Kim
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Exceptionally Uniform and Scalable Multilayer MoS2 Phototransistor Array Based on Large-Scale MoS2 Grown by RF Sputtering, Electron Beam Irradiation, and …
H Park, N Liu, BH Kim, SH Kwon, S Baek, S Kim, HK Lee, YJ Yoon, S Kim
ACS Applied Materials & Interfaces 12 (18), 20645-20652, 2020
642020
Direct WS2 photodetector fabrication on a flexible substrate
BH Kim, H Yoon, SH Kwon, DW Kim, YJ Yoon
Vacuum 184, 109950, 2021
312021
Negative photoconductivity of WS2 nanosheets decorated with Au nanoparticles via electron-beam irradiation
BH Kim, SH Kwon, HH Gu, YJ Yoon
Physica E: Low-dimensional Systems and Nanostructures 106, 45-49, 2019
272019
Atomic rearrangement of a sputtered MoS 2 film from amorphous to a 2D layered structure by electron beam irradiation
BH Kim, HH Gu, YJ Yoon
Scientific reports 7 (1), 3874, 2017
252017
Large-area and low-temperature synthesis of few-layered WS2 films for photodetectors
BH Kim, HH Gu, YJ Yoon
2D Materials 5 (4), 045030, 2018
212018
Comprehensive Understanding of the HZO-based n/pFeFET Operation and Device Performance Enhancement Strategy
SH Kuk, SM Han, BH Kim, SH Baek, JH Han, S Kim
2021 IEEE International Electron Devices Meeting (IEDM), 33.6. 1-33.6. 4, 2021
182021
An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode
SH Kuk, SM Han, BH Kim, SH Baek, JH Han, SH Kim
IEEE Transactions on Electron Devices 69 (4), 2080-2087, 2022
162022
Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors
J Shim, J Lim, DM Geum, BH Kim, SY Ahn, SH Kim
Optics Express 29 (12), 18037-18058, 2021
102021
Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference
JP Kim, SK Kim, S Park, S Kuk, T Kim, BH Kim, SH Ahn, YH Cho, ...
Nano Letters 23 (2), 451-461, 2023
92023
Photoresponsive behavior of electron-beam irradiated MoS2 films
HH Gu, BH Kim, YJ Yoon
Applied Physics Letters 113 (18), 183103, 2018
92018
Oxygen scavenging of HfZrO 2-based capacitors for improving ferroelectric properties
BH Kim, S Kuk, SK Kim, JP Kim, DM Geum, SH Baek, SH Kim
Nanoscale Advances 4 (19), 4114-4121, 2022
82022
Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay
WJ Baek, J Park, J Shim, BH Kim, S Park, HS Kim, DM Geum, SH Kim
Nature Communications 14 (1), 1386, 2023
52023
Preparation of MoS2 Nanopetals by RF Magnetron Sputtering and Electron-Beam Irradiation
BH Kim, JH Han, SH Kwon, YJ Yoon
Applied Science and Convergence Technology 27 (6), 149-152, 2018
52018
Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization
SH Kuk, S Han, DH Lee, BH Kim, J Shim, MH Park, JH Han, SH Kim
IEEE Electron Device Letters 44 (1), 36-39, 2022
42022
Polyimide photodevices without a substrate by electron-beam irradiation
H Yoon, BH Kim, SH Kwon, DW Kim, YJ Yoon
Applied Surface Science 570, 151185, 2021
42021
Vastly Enhanced Photoresponsivities of Phase-Controlled Tin Sulfide Thin Films
SH Kwon, BH Kim, DW Kim, H Yoon, YJ Yoon
Nanotechnology 31 (37), 375702, 2020
42020
Improvement in IGZO-based thin film transistor performance using a dual-channel structure and electron-beam-irradiation
YJ Yoon, BH Kim, HH Gu
Semiconductor Science and Technology, 2018
42018
Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding
SK Kim, HR Lim, J Jeong, SW Lee, JP Kim, J Jeong, BH Kim, SY Ahn, ...
2022 International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2022
32022
A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (> 70%)
DM Geum, J Lim, J Jang, S Ahn, SK Kim, J Shim, BH Kim, J Park, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
32022
IL Scavenging and Recovery Strategies to Improve the Performance and Reliability of HZO-Based FeFETs
BH Kim, SK Kim, S Kuk, YJ Suh, J Jeong, JP Kim, DM Geum, S Kim
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
22023
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학술자료 1–20