| Superjunction LDMOST using an insulator substrate for power integrated circuits CAT Salama, SK Nassif US Patent 6,768,180, 2004 | 140 | 2004 |
| Sj/Resurf Ldmost SG Nassif-Khalil, LZ Hou, CAT Salama IEEE Transactions on Electron Devices 51 (7), 1185-1191, 2004 | 135 | 2004 |
| Super-junction LDMOST on a silicon-on-sapphire substrate SG Nassif-Khalil, CAT Salama IEEE Transactions on Electron Devices 50 (5), 1385-1391, 2003 | 123 | 2003 |
| Super junction/resurf ldmost (sjr-LDMOST) CAT Salama, SK Nassif US Patent 7,023,050, 2006 | 64 | 2006 |
| Back-etched super-junction LDMOST on SOI S Honarkhah, S Nassif-Khalil, CAT Salama Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat …, 2004 | 60 | 2004 |
| Super junction LDMOST in silicon-on-sapphire technology (SJ-LDMOST) SG Nassif-Khalil, CAT Salama Proceedings of the 14th International Symposium on Power Semiconductor …, 2002 | 55 | 2002 |
| Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot B Hughes, J Lazar, S Hulsey, M Musni, D Zehnder, A Garrido, R Khanna, ... 2014 IEEE Applied Power Electronics Conference and Exposition-APEC 2014, 484-487, 2014 | 39 | 2014 |
| Normally-off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt R Chu, B Hughes, M Chen, D Brown, R Li, S Khalil, D Zehnder, S Chen, ... 71st Device Research Conference, 199-200, 2013 | 34 | 2013 |
| 170V Super Junction-LDMOST in a 0.5/spl mu/m commercial CMOS/SOS technology SG Nassif-Khalil, CAT Salama ISPSD'03. 2003 IEEE 15th International Symposium on Power Semiconductor …, 2003 | 31 | 2003 |
| Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices SG Khalil, KS Boutros US Patent 8,680,536, 2014 | 25 | 2014 |
| HV GaN reliability and status SG Khalil, S Hardikar, S Sack, E Persson, M Imam, T McDonald 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 18 | 2015 |
| Multiple lateral RESURF LDMOST S Khalil US Patent 8,106,451, 2012 | 18 | 2012 |
| HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same SG Khalil, KS Boutros, K Shinohara US Patent 9,379,195, 2016 | 17 | 2016 |
| Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas SG Khalil, A Corrion, KS Boutros US Patent 9,490,357, 2016 | 12 | 2016 |
| Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loops B Hughes, KS Boutros, DM Zehnder, SG Khalil, R Chu US Patent 9,077,335, 2015 | 12 | 2015 |
| Normally-off gate-recessed AlGaN/GaN-on-Si hybrid MOS-HFET with Al2O3gate dielectric AL Corrion, M Chen, R Chu, SD Burnham, S Khalil, D Zehnder, B Hughes, ... 69th Device Research Conference, 213-214, 2011 | 11 | 2011 |
| Low voltage CMOS compatible power MOSFET for on-chip DC/DC converters SG Nassif-Khalil, S Honarkhah, CAT Salama 12th International Symposium on Power Semiconductor Devices & ICs …, 2000 | 10 | 2000 |
| Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate Z Li, R Chu, D Zehnder, S Khalil, M Chen, X Chen, K Boutros 72nd Device Research Conference, 257-258, 2014 | 9 | 2014 |
| Trap-related parametric shifts under DC bias and switched operation life stress in power AlGaN/GaN HEMTs SG Khalil, L Ray, M Chen, R Chu, D Zehnder, A Garrido, M Munsi, S Kim, ... 2014 IEEE International Reliability Physics Symposium, CD. 4.1-CD. 4.9, 2014 | 9 | 2014 |
| Overview of wide/ultra-wide bandgap power semiconductor devices for distributed energy resources SK Mazumder, LF Voss, K Dowling, A Conway, D Hall, RJ Kaplar, ... IEEE Journal of Emerging and Selected Topics in Power Electronics, 2023 | 7 | 2023 |
