| SThM temperature mapping and nonlinear thermal resistance evolution with bias on AlGaN/GaN HEMT devices R Aubry, JC Jacquet, J Weaver, O Durand, P Dobson, G Mills, ... IEEE transactions on electron devices 54 (3), 385-390, 2007 | 115 | 2007 |
| Surface potential of n-and p-type GaN measured by Kelvin force microscopy S Barbet, R Aubry, MA di Forte-Poisson, JC Jacquet, D Deresmes, T Melin, ... Applied Physics Letters 93 (21), 2008 | 90 | 2008 |
| 43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers S Piotrowicz, Z Ouarch, E Chartier, R Aubry, G Callet, D Floriot, ... 2010 IEEE MTT-S International Microwave Symposium, 505-508, 2010 | 70 | 2010 |
| State of the art 58W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC amplifiers S Piotrowicz, E Morvan, R Aubry, S Bansropun, T Bouvet, E Chartier, ... 2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 1-4, 2008 | 65 | 2008 |
| ICP-CVD SiN passivation for high-power RF InAlGaN/GaN/SiC HEMT R Aubry, JC Jacquet, M Oualli, O Patard, S Piotrowicz, E Chartier, ... IEEE Electron Device Letters 37 (5), 629-632, 2016 | 50 | 2016 |
| Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films C Duquenne, PY Tessier, MP Besland, B Angleraud, PY Jouan, R Aubry, ... Journal of Applied Physics 104 (6), 2008 | 50 | 2008 |
| Investigation of InAlN layers surface reactivity after thermal annealings: a complete XPS study for HEMT Y Bourlier, M Bouttemy, O Patard, P Gamarra, S Piotrowicz, J Vigneron, ... ECS Journal of Solid State Science and Technology 7 (6), P329, 2018 | 45 | 2018 |
| MBE growth of ALGaN/GaN HEMTS on resistive Si (1 1 1) substrate with RF small signal and power performances Y Cordier, F Semond, P Lorenzini, N Grandjean, F Natali, B Damilano, ... Journal of crystal growth 251 (1-4), 811-815, 2003 | 45 | 2003 |
| Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process O Jardel, G Callet, J Dufraisse, M Piazza, N Sarazin, E Chartier, M Oualli, ... International Journal of Microwave and Wireless Technologies 3 (3), 301-309, 2011 | 34 | 2011 |
| Deep traps analysis in AlGaN/GaN heterostructure transistors W Chikhaoui, JM Bluet, C Bru‐Chevallier, C Dua, R Aubry physica status solidi c 7 (1), 92-95, 2010 | 34 | 2010 |
| Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature C Duquenne, MA Djouadi, PY Tessier, PY Jouan, MP Besland, C Brylinski, ... Applied Physics Letters 93 (5), 2008 | 32 | 2008 |
| Second-harmonic scattering by domains in RbH2PO4 ferroelectrics Y Le Grand, D Rouede, C Odin, R Aubry, S Mattauch Optics communications 200 (1-6), 249-260, 2001 | 31 | 2001 |
| A new nonlinear HEMT model for AlGaN/GaN switch applications O Jardel, G Callet, C Charbonniaud, JC Jacquet, N Sarazin, E Morvan, ... 2009 European Microwave Integrated Circuits Conference (EuMIC), 73-76, 2009 | 30 | 2009 |
| Development of time-resolved UV micro-Raman spectroscopy to measure temperature in AlGaN/GaN HEMTs O Lancry, E Pichonat, J Réhault, M Moreau, R Aubry, C Gaquière Solid-state electronics 54 (11), 1434-1437, 2010 | 28 | 2010 |
| Nonquasi‐static large‐signal model of GaN FETs through an equivalent voltage approach A Santarelli, V Di Giacomo, A Raffo, F Filicori, G Vannini, R Aubry, ... International Journal of RF and Microwave Computer‐Aided Engineering: Co …, 2008 | 28 | 2008 |
| Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters C Potier, JC Jacquet, C Dua, A Martin, M Campovecchio, M Oualli, ... International Journal of Microwave and Wireless Technologies 7 (3-4), 287-296, 2015 | 25 | 2015 |
| Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3as Passivation for InAlN/AlN/GaN HEMTs A Malmros, P Gamarra, MA di Forte-Poisson, H Hjelmgren, C Lacam, ... IEEE Electron Device Letters 36 (3), 235-237, 2015 | 25 | 2015 |
| X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate N Sarazin, O Jardel, E Morvan, R Aubry, M Laurent, M Magis, M Tordjman, ... Electronics Letters 43 (23), 1317-1318, 2007 | 25 | 2007 |
| 12W/mm with 0.15 µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications S Piotrowicz, O Jardel, E Chartier, R Aubry, L Baczkowski, M Casbon, ... 2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-3, 2014 | 24 | 2014 |
| Evaluation of an InAlN/AlN/GaN HEMT with Ta‐based ohmic contacts and PECVD SiN passivation A Malmros, P Gamarra, M Thorsell, MA Forte‐Poisson, C Lacam, ... physica status solidi (c) 11 (3‐4), 924-927, 2014 | 22 | 2014 |
