| Extraordinary second harmonic generation in tungsten disulfide monolayers C Janisch, Y Wang, D Ma, N Mehta, AL Elías, N Perea-López, M Terrones, ... Scientific reports 4 (1), 5530, 2014 | 385 | 2014 |
| Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide V Carozo, Y Wang, K Fujisawa, BR Carvalho, A McCreary, S Feng, Z Lin, ... Science advances 3 (4), e1602813, 2017 | 306 | 2017 |
| Intervalley scattering by acoustic phonons in two-dimensional MoS 2 revealed by double-resonance Raman spectroscopy BR Carvalho*, Y Wang*, S Mignuzzi, D Roy, M Terrones, C Fantini, ... Nature communications 8 (1), 1-8, 2017 | 271 | 2017 |
| Non-oxidative intercalation and exfoliation of graphite by Brønsted acids NI Kovtyukhova, Y Wang, A Berkdemir, R Cruz-Silva, M Terrones, ... Nature chemistry 6 (11), 957-963, 2014 | 228 | 2014 |
| ReaxFF Reactive Force-Field Study of Molybdenum Disulfide (MoS2) A Ostadhossein, A Rahnamoun, Y Wang, P Zhao, S Zhang, VH Crespi, ... The journal of physical chemistry letters 8 (3), 631-640, 2017 | 182 | 2017 |
| Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy N Briggs*, B Bersch*, Y Wang*, J Jiang, RJ Koch, N Nayir, K Wang, ... Nature materials 19 (6), 637-643, 2020 | 175 | 2020 |
| Monolayer vanadium‐doped tungsten disulfide: a room‐temperature dilute magnetic semiconductor F Zhang, B Zheng, A Sebastian, DH Olson, M Liu, K Fujisawa, YTH Pham, ... Advanced Science 7 (24), 2001174, 2020 | 161 | 2020 |
| Defect-controlled nucleation and orientation of WSe2 on hBN: a route to single-crystal epitaxial monolayers X Zhang*, F Zhang*, Y Wang, DS Schulman, T Zhang, A Bansal, N Alem, ... ACS nano 13 (3), 3341-3352, 2019 | 151 | 2019 |
| Multiscale computational understanding and growth of 2D materials: a review K Momeni, Y Ji, Y Wang, S Paul, S Neshani, DE Yilmaz, YK Shin, ... npj Computational Materials 6 (1), 22, 2020 | 149 | 2020 |
| Recent advances in 2D material theory, synthesis, properties, and applications YC Lin, R Torsi, R Younas, CL Hinkle, AF Rigosi, HM Hill, K Zhang, ... ACS nano 17 (11), 9694-9747, 2023 | 120 | 2023 |
| Intricate Resonant Raman Response in Anisotropic ReS2 A McCreary, JR Simpson, Y Wang, D Rhodes, K Fujisawa, L Balicas, ... Nano letters 17 (10), 5897-5907, 2017 | 109 | 2017 |
| Reversible intercalation of hexagonal boron nitride with Brønsted acids NI Kovtyukhova, Y Wang, R Lv, M Terrones, VH Crespi, TE Mallouk Journal of the American Chemical Society 135 (22), 8372-8381, 2013 | 106 | 2013 |
| Low‐Temperature Solution Synthesis of Few‐Layer 1T ′‐MoTe2 Nanostructures Exhibiting Lattice Compression Y Sun, Y Wang, D Sun, BR Carvalho, CG Read, C Lee, Z Lin, K Fujisawa, ... Angewandte Chemie 128 (8), 2880-2884, 2016 | 105 | 2016 |
| Interface-mediated noble metal deposition on transition metal dichalcogenide nanostructures Y Sun, Y Wang, JYC Chen, K Fujisawa, CF Holder, JT Miller, VH Crespi, ... Nature chemistry 12 (3), 284-293, 2020 | 98 | 2020 |
| Multi-scale modeling of gas-phase reactions in metal-organic chemical vapor deposition growth of WSe2 Y Xuan, A Jain, S Zafar, R Lotfi, N Nayir, Y Wang, TH Choudhury, S Wright, ... Journal of Crystal Growth 527, 125247, 2019 | 88 | 2019 |
| Evidence for a Magnetic-Field-Induced Ideal Type-II Weyl State in Antiferromagnetic Topological Insulator SH Lee, D Graf, L Min, Y Zhu, H Yi, S Ciocys, Y Wang, ES Choi, R Basnet, ... Physical Review X 11 (3), 031032, 2021 | 71 | 2021 |
| Spontaneous formation of atomically thin stripes in transition metal dichalcogenide monolayers A Azizi, Y Wang, Z Lin, K Wang, AL Elias, M Terrones, VH Crespi, N Alem Nano letters 16 (11), 6982-6987, 2016 | 70 | 2016 |
| Defect Coupling and Sub-Angstrom Structural Distortions in W1–xMoxS2 Monolayers A Azizi, Y Wang, G Stone, AL Elias, Z Lin, M Terrones, VH Crespi, N Alem Nano letters 17 (5), 2802-2808, 2017 | 63 | 2017 |
| Dynamics of cleaning, passivating and doping monolayer MoS2 by controlled laser irradiation R Rao, V Carozo, Y Wang, AE Islam, N Perea-Lopez, K Fujisawa, ... 2D Materials 6 (4), 045031, 2019 | 52 | 2019 |
| Full orientation control of epitaxial MoS 2 on hBN assisted by substrate defects F Zhang*, Y Wang*, C Erb, K Wang, P Moradifar, VH Crespi, N Alem Physical review B 99 (15), 155430, 2019 | 52 | 2019 |
Vincent H CrespiProfessor of Physics, Pennsylvania State Universitypsu.edu의 이메일 확인됨
