| A thermodynamic evaluation of four Si-M (M= Mo, Ta, Ti, W) binary systems C Vahlas, PY Chevalier, E Blanquet Calphad 13 (3), 273-292, 1989 | 125 | 1989 |
| Thermodynamic heat transfer and mass transport modeling of the sublimation growth of silicon carbide crystals M Pons, E Blanquet, JM Dedulle, I Garcon, R Madar, C Bernard Journal of the Electrochemical Society 143 (11), 3727, 1996 | 101 | 1996 |
| Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition D Hazra, N Tsavdaris, S Jebari, A Grimm, F Blanchet, F Mercier, ... Superconductor Science and Technology 29 (10), 105011, 2016 | 89 | 2016 |
| Preferential orientation of fluorine-doped SnO2 thin films: The effects of growth temperature V Consonni, G Rey, H Roussel, B Doisneau, E Blanquet, D Bellet Acta materialia 61 (1), 22-31, 2013 | 87 | 2013 |
| Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept J Meziere, M Ucar, E Blanquet, M Pons, P Ferret, L Di Cioccio Journal of Crystal Growth 267 (3-4), 436-451, 2004 | 78 | 2004 |
| State of the art in the modelling of SiC sublimation growth M Pons, M Anikin, K Chourou, JM Dedulle, R Madar, E Blanquet, A Pisch, ... Materials Science and Engineering: B 61, 18-28, 1999 | 74 | 1999 |
| Low-temperature low-resistivity PEALD TiN using TDMAT under hydrogen reducing ambient P Caubet, T Blomberg, R Benaboud, C Wyon, E Blanquet, JP Gonchond, ... Journal of The Electrochemical Society 155 (8), H625, 2008 | 61 | 2008 |
| Characterization of Al2O3 thin films prepared by thermal ALD C Barbos, D Blanc-Pelissier, A Fave, E Blanquet, A Crisci, E Fourmond, ... Energy Procedia 77, 558-564, 2015 | 60 | 2015 |
| SiC single crystal growth by a modified physical vapor transport technique P Wellmann, P Desperrier, R Müller, T Straubinger, A Winnacker, F Baillet, ... Journal of Crystal Growth 275 (1-2), e555-e560, 2005 | 58 | 2005 |
| Niobium nitride thin films deposited by high temperature chemical vapor deposition F Mercier, S Coindeau, S Lay, A Crisci, M Benz, T Encinas, R Boichot, ... Surface and Coatings Technology 260, 126-132, 2014 | 55 | 2014 |
| Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices A Lintanf-Salaün, A Mantoux, E Djurado, E Blanquet Microelectronic Engineering 87 (3), 373-378, 2010 | 52 | 2010 |
| Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization CE Ramberg, E Blanquet, M Pons, C Bernard, R Madar Microelectronic engineering 50 (1-4), 357-368, 2000 | 52 | 2000 |
| Evaluation of LPCVD Me Si N (Me Ta, Ti, W, Re) diffusion barriers for Cu metallizations E Blanquet, AM Dutron, V Ghetta, C Bernard, R Madar Microelectronic Engineering 37, 189-195, 1997 | 51 | 1997 |
| Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy M Balaji, A Claudel, V Fellmann, I Gelard, E Blanquet, R Boichot, A Pierret, ... Journal of Alloys and Compounds 526, 103-109, 2012 | 49 | 2012 |
| Al2O3 thin films deposited by thermal atomic layer deposition: Characterization for photovoltaic applications C Barbos, D Blanc-Pelissier, A Fave, C Botella, P Regreny, G Grenet, ... Thin Solid Films 617, 108-113, 2016 | 48 | 2016 |
| Technological advances-Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition M Pons, J Mézière, JM Dedulle, SWT Kuan, E Blanquet, C Bernard, ... Journal de Physique-Colloques 11 (3), 1079-1086, 2001 | 46 | 2001 |
| Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD A Claudel, E Blanquet, D Chaussende, M Audier, D Pique, M Pons Journal of Crystal Growth 311 (13), 3371-3379, 2009 | 44 | 2009 |
| LPCVD and PACVD (Ti, Al) N films: morphology and mechanical properties S Anderbouhr, V Ghetta, E Blanquet, C Chabrol, F Schuster, C Bernard, ... Surface and Coatings Technology 115 (2-3), 103-110, 1999 | 43 | 1999 |
| Epitaxial and polycrystalline growth of AlN by high temperature CVD: Experimental results and simulation R Boichot, A Claudel, N Baccar, A Milet, E Blanquet, M Pons Surface and coatings technology 205 (5), 1294-1301, 2010 | 42 | 2010 |
| Evolution of crystal structure during the initial stages of ZnO atomic layer deposition R Boichot, L Tian, MI Richard, A Crisci, A Chaker, V Cantelli, S Coindeau, ... Chemistry of Materials 28 (2), 592-600, 2016 | 41 | 2016 |
