‪Joy S. Lee‬ - ‪Google Scholar‬

Get my own profile

Cited by

	All	Since 2019
Citations	406	365
h-index	3	3
i10-index	3	3

0

100

50

25

75

201720182019202020212022202320245 34 47 58 91 65 80 24

Co-authors

Jiyoung KimProfessor of Materials Science and Engineering, University of Texas at DallasVerified email at utdallas.edu
Harrison Sejoon KimIntel ATTDVerified email at intel.com
Lanxia ChengStaff Engineer_EMD ElectronicsVerified email at emdgroup.com
Xin MengPhD, Electrical Engineering, The University of Texas at DallasVerified email at utdallas.edu

Joy S. Lee

Joy S. Lee

Materials Science and Engineering Ph.D. Candidate, University of Texas at Dallas

Verified email at utdallas.edu

Atomic layer deposition (ALD)Thermal management Plasma Enhanced Chemical Vapor Deposition (PECVD)Semiconductor devices


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ... Applied Physics Letters 111 (24), 2017	264	2017
Atomic layer deposition of silicon nitride thin films: a review of recent progress, challenges, and outlooks X Meng, YC Byun, HS Kim, JS Lee, AT Lucero, L Cheng, J Kim Materials 9 (12), 1007, 2016	129	2016
Low temperature (400° C) ferroelectric Hf0. 5Zr0. 5O2 capacitors for next-generation FRAM applications SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, CD Young, J Kim, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017	13	2017
Inversion behavior of ALD HfZrO2/InGaAs MOS capacitors with in-situ DEZ-H2O treatment JG Lee, YC Byun, D Narayan, AT Lucero, J Kim

The system can't perform the operation now. Try again later.

Articles 1–4