| The IMEC clean: A new concept for particle and metal removal on Si surfaces M Meuris, PW Mertens, A Opdebeeck, HF Schmidt, M Depas, G Vereecke, ... Solid State Technology 38 (7), 109-113, 1995 | 145 | 1995 |
| Fundamental tribological and removal rate studies of inter-layer dielectric chemical mechanical planarization A Philipossian, S Olsen Japanese journal of applied physics 42 (10R), 6371, 2003 | 135 | 2003 |
| Hot carrier-hard gate oxides by nitrogen implantation before gate oxidation HR Soleimani, B Doyle, A Philipossian US Patent 5,596,218, 1997 | 129 | 1997 |
| Method of controlling gate oxide thickness in the fabrication of semiconductor devices HR Soleimani, BS Doyle, A Philipossian US Patent 5,330,920, 1994 | 95 | 1994 |
| Method of decreasing the field oxide etch rate in isolation technology A Philipossian, HR Soleimani, BS Doyle US Patent 5,316,965, 1994 | 91 | 1994 |
| Arrhenius characterization of ILD and copper CMP processes J Sorooshian, D DeNardis, L Charns, Z Li, F Shadman, D Boning, ... Journal of the Electrochemical Society 151 (2), G85, 2004 | 82 | 2004 |
| Measurements of slurry film thickness and wafer drag during CMP J Lu, C Rogers, VP Manno, A Philipossian, S Anjur, M Moinpour Journal of the Electrochemical Society 151 (4), G241, 2004 | 78 | 2004 |
| Determining the effects of slurry surfactant, abrasive size, and abrasive content on the tribology and kinetics of copper CMP Z Li, K Ina, P Lefevre, I Koshiyama, A Philipossian Journal of The Electrochemical Society 152 (4), G299, 2005 | 72 | 2005 |
| Effect of slurry flow rate on tribological, thermal, and removal rate attributes of copper CMP Z Li, L Borucki, I Koshiyama, A Philipossian Journal of The Electrochemical Society 151 (7), G482, 2004 | 72 | 2004 |
| Simultaneous growth of different thickness gate oxides in silicon CMOS processing B Doyle, HR Soleimani, A Philipossian IEEE electron device letters 16 (7), 301-302, 1995 | 72 | 1995 |
| Slurry utilization efficiency studies in chemical mechanical planarization A Philipossian, E Mitchell Japanese journal of applied physics 42 (12R), 7259, 2003 | 64 | 2003 |
| Investigating slurry transport beneath a wafer during chemical mechanical polishing processes J Coppeta, C Rogers, L Racz, A Philipossian, FB Kaufman Journal of The Electrochemical Society 147 (5), 1903, 2000 | 62 | 2000 |
| Analysis of flow between a wafer and pad during CMP processes C Rogers, J Coppeta, L Racz, A Philipossian, FB Kaufman, D Bramono Journal of Electronic Materials 27, 1082-1087, 1998 | 60 | 1998 |
| Threshold optimization for soi transistors through use of negative charge in the gate oxide BS Doyle, A Philipossian US Patent 5,387,530, 1995 | 58 | 1995 |
| The relationship of the silicon surface roughness and gate oxide integrity in NH4OH/H2O2 mixtures M Meuris, S Verhaverbeke, PW Mertens, MM Heyns, L Hellemans, ... Japanese journal of applied physics 31 (11A), L1514, 1992 | 57 | 1992 |
| Formation of ultrathin nitrided SiO2 oxides by direct nitrogen implantation into silicon HR Soleimani, BS Doyle, A Philipossian Journal of the Electrochemical Society 142 (8), L132, 1995 | 53 | 1995 |
| Investigating the effect of diamond size and conditioning force on chemical mechanical planarization pad topography T Sun, L Borucki, Y Zhuang, A Philipossian Microelectronic Engineering 87 (4), 553-559, 2010 | 51 | 2010 |
| Tribology and removal rate characteristics of abrasive-free slurries for copper CMP applications D DeNardis, J Sorooshian, M Habiro, C Rogers, A Philipossian Japanese journal of applied physics 42 (11R), 6809, 2003 | 51 | 2003 |
| Characterization of copper-hydrogen peroxide film growth kinetics D DeNardis, D Rosales-Yeomans, L Borucki, A Philipossian Thin Solid Films 513 (1-2), 311-318, 2006 | 50 | 2006 |
| Effect of pad groove designs on the frictional and removal rate characteristics of ILD CMP D Rosales-Yeomans, T Doi, M Kinoshita, T Suzuki, A Philipossian Journal of the Electrochemical Society 152 (1), G62, 2004 | 50 | 2004 |
