Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition J Tatebayashi, M Nishioka, Y Arakawa Applied Physics Letters 78 (22), 3469-3471, 2001 | 352 | 2001 |
Room-temperature lasing in a single nanowire with quantum dots J Tatebayashi, S Kako, J Ho, Y Ota, S Iwamoto, Y Arakawa Nature Photonics 9 (8), 501-505, 2015 | 203 | 2015 |
Size, shape, and strain dependence of the g factor in self-assembled In (Ga) As quantum dots T Nakaoka, T Saito, J Tatebayashi, Y Arakawa Physical Review B 70 (23), 235337, 2004 | 160 | 2004 |
Low-threshold near-infrared GaAs–AlGaAs core–shell nanowire plasmon laser J Ho, J Tatebayashi, S Sergent, CF Fong, S Iwamoto, Y Arakawa Acs Photonics 2 (1), 165-171, 2015 | 122 | 2015 |
III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs G Balakrishnan, J Tatebayashi, A Khoshakhlagh, SH Huang, A Jallipalli, ... Applied physics letters 89 (16), 2006 | 113 | 2006 |
Narrow photoluminescence linewidth from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor … T Yang, J Tatebayashi, S Tsukamoto, M Nishioka, Y Arakawa Applied physics letters 84 (15), 2817-2819, 2004 | 80 | 2004 |
1.28 μm lasing from stacked InAs∕ GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition J Tatebayashi, N Hatori, M Ishida, H Ebe, M Sugawara, Y Arakawa, ... Applied Physics Letters 86 (5), 2005 | 79 | 2005 |
A nanowire-based plasmonic quantum dot laser J Ho, J Tatebayashi, S Sergent, CF Fong, Y Ota, S Iwamoto, Y Arakawa Nano letters 16 (4), 2845-2850, 2016 | 75 | 2016 |
Lasing characteristics of GaSb∕ GaAs self-assembled quantum dots embedded in an InGaAs quantum well J Tatebayashi, A Khoshakhlagh, SH Huang, G Balakrishnan, LR Dawson, ... Applied Physics Letters 90 (26), 2007 | 71 | 2007 |
Tuning of g-factor in self-assembled In (Ga) As quantum dots through strain engineering T Nakaoka, T Saito, J Tatebayashi, S Hirose, T Usuki, N Yokoyama, ... Physical Review B 71 (20), 205301, 2005 | 71 | 2005 |
Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots P Jayavel, H Tanaka, T Kita, O Wada, H Ebe, M Sugawara, J Tatebayashi, ... Applied physics letters 84 (11), 1820-1822, 2004 | 71 | 2004 |
Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids PS Wong, G Balakrishnan, N Nuntawong, J Tatebayashi, DL Huffaker Applied Physics Letters 90 (18), 2007 | 65 | 2007 |
Area-controlled growth of InAs quantum dots and improvement of density and size distribution J Tatebayashi, M Nishioka, T Someya, Y Arakawa Applied Physics Letters 77 (21), 3382-3384, 2000 | 64 | 2000 |
Formation and optical characteristics of strain-relieved and densely stacked GaSb∕ GaAs quantum dots J Tatebayashi, A Khoshakhlagh, SH Huang, LR Dawson, G Balakrishnan, ... Applied Physics Letters 89 (20), 2006 | 62 | 2006 |
InAs∕ GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots J Tatebayashi, Y Arakawa, N Hatori, H Ebe, M Sugawara, H Sudo, ... Applied physics letters 85 (6), 1024-1026, 2004 | 59 | 2004 |
Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters J Tatebayashi, Y Ota, S Ishida, M Nishioka, S Iwamoto, Y Arakawa Applied Physics Letters 100 (26), 2012 | 58 | 2012 |
Room temperature continuous wave lasing in InAs quantum-dot microdisks with air cladding T Ide, T Baba, J Tatebayashi, S Iwamoto, T Nakaoka, Y Arakawa Optics express 13 (5), 1615-1620, 2005 | 56 | 2005 |
Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices J Tatebayashi, N Nuntawong, PS Wong, YC Xin, LF Lester, DL Huffaker Journal of Physics D: Applied Physics 42 (7), 073002, 2009 | 55 | 2009 |
Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemicalvapour deposition J Tatebayashi, N Hatori, H Kakuma, H Ebe, H Sudo, A Kuramata, ... Electronics Letters 39 (15), 1130-1131, 2003 | 54 | 2003 |
GaSb/GaAs type-II quantum dots grown by droplet epitaxy B Liang, A Lin, N Pavarelli, C Reyner, J Tatebayashi, K Nunna, J He, ... Nanotechnology 20 (45), 455604, 2009 | 53 | 2009 |