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Youngjo Jin
Youngjo Jin
Postdoctoral Research Fellow, Department of Physics, Harvard University
g.harvard.edu의 이메일 확인됨
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A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2
Y Jin, DH Keum, SJ An, J Kim, HS Lee, YH Lee
Advanced Materials 27 (37), 5534-5540, 2015
1872015
Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion Layer
MH Doan, Y Jin, S Adhikari, S Lee, J Zhao, SC Lim, YH Lee
ACS nano 11 (4), 3832-3840, 2017
1502017
Heterogeneous Defect Domains in Single‐Crystalline Hexagonal WS2
HY Jeong*, Y Jin*, SJ Yun, J Zhao, J Baik, DH Keum, HS Lee, YH Lee
Advanced Materials 29 (15), 1605043, 2017
1342017
Oxidation effect in octahedral hafnium disulfide thin film
SH Chae*, Y Jin*, TS Kim, DS Chung, H Na, H Nam, H Kim, DJ Perello, ...
ACS nano 10 (1), 1309-1316, 2016
992016
Electrical Transport Properties of Polymorphic MoS2
JS Kim, J Kim, J Zhao, S Kim, JH Lee, Y Jin, H Choi, BH Moon, JJ Bae, ...
ACS nano 10 (8), 7500-7506, 2016
722016
Optical Gain in MoS2 via Coupling with Nanostructured Substrate: Fabry–Perot Interference and Plasmonic Excitation
HY Jeong, UJ Kim, H Kim, GH Han, H Lee, MS Kim, Y Jin, TH Ly, SY Lee, ...
ACS nano 10 (9), 8192-8198, 2016
692016
Chemically modulated band gap in bilayer graphene memory transistors with high on/off ratio
SY Lee, DL Duong, QA Vu, Y Jin, P Kim, YH Lee
ACS nano 9 (9), 9034-9042, 2015
672015
Selective Amplification of the Primary Exciton in a Mo S 2 Monolayer
HS Lee, MS Kim, Y Jin, GH Han, YH Lee, J Kim
Physical review letters 115 (22), 226801, 2015
602015
Efficient Exciton–Plasmon Conversion in Ag Nanowire/Monolayer MoS2 Hybrids: Direct Imaging and Quantitative Estimation of Plasmon Coupling and Propagation
HS Lee, MS Kim, Y Jin, GH Han, YH Lee, J Kim
Advanced Optical Materials 3 (7), 943-947, 2015
542015
Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides
H Kim, GH Han, SJ Yun, J Zhao, DH Keum, HY Jeong, TH Ly, Y Jin, ...
Nanotechnology 28 (36), 36LT01, 2017
492017
Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors
BH Moon, GH Han, H Kim, H Choi, JJ Bae, J Kim, Y Jin, HY Jeong, ...
ACS applied materials & interfaces 9 (12), 11240-11246, 2017
472017
Reconfigurable exciton-plasmon interconversion for nanophotonic circuits
HS Lee, DH Luong, MS Kim, Y Jin, H Kim, S Yun, YH Lee
Nature communications 7 (1), 1-6, 2016
452016
Multiple Magnetic Phases in Van Der Waals Mn‐Doped SnS2 Semiconductor
H Bouzid, R Sahoo, SJ Yun, K Singh, Y Jin, J Jiang, D Yoon, HY Song, ...
Advanced Functional Materials 31 (29), 2102560, 2021
132021
Probing giant Zeeman shift in vanadium-doped via resonant magnetotunneling transport
J Jiang, LAT Nguyen, TD Nguyen, DH Luong, DY Kim, Y Jin, P Kim, ...
Physical Review B 103 (1), 014441, 2021
102021
Room‐Temperature Mesoscopic Fluctuations and Coulomb Drag in Multilayer WSe2
MH Doan, Y Jin, TK Chau, MK Joo, YH Lee
Advanced Materials 31 (17), 1900154, 2019
102019
Coulomb drag transistor using a graphene and MoS2 heterostructure
Y Jin, MK Joo, BH Moon, H Kim, S Lee, HY Jeong, YH Lee
Communications Physics 3 (1), 1-8, 2020
92020
Enhanced magnetic moment with cobalt dopant in SnS2 semiconductor
H Bouzid, S Rodan, K Singh, Y Jin, J Jiang, D Yoon, HY Song, YH Lee
APL Materials 9 (5), 051106, 2021
42021
Electron-hole pair condensation in Graphene/MoS2 heterointerface
MK Joo*, Y Jin*, BH Moon, H Kim, S Lee, YH Lee
arXiv preprint arXiv:1711.00606, 2017
22017
Coulomb drag transistor via graphene/MoS2 heterostructures
Y Jin*, MK Joo*, BH Moon, H Kim, S Lee, HY Jeong, HY Kwak, YH Lee
arXiv preprint arXiv:1710.11365, 2017
22017
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학술자료 1–19