| Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior F Cüppers, S Menzel, C Bengel, A Hardtdegen, M Von Witzleben, ... APL materials 7 (9), 2019 | 129 | 2019 |
| Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiOx Bilayer ReRAM Cells A Hardtdegen, C La Torre, F Cüppers, S Menzel, R Waser, ... IEEE transactions on electron devices 65 (8), 3229-3236, 2018 | 116 | 2018 |
| Variability-aware modeling of filamentary oxide-based bipolar resistive switching cells using SPICE level compact models C Bengel, A Siemon, F Cüppers, S Hoffmann-Eifert, A Hardtdegen, ... IEEE Transactions on Circuits and Systems I: Regular Papers 67 (12), 4618-4630, 2020 | 106 | 2020 |
| Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices H Zhang, S Yoo, S Menzel, C Funck, F Cüppers, DJ Wouters, CS Hwang, ... ACS applied materials & interfaces 10 (35), 29766-29778, 2018 | 93 | 2018 |
| Design of defect-chemical properties and device performance in memristive systems M Lübben, F Cüppers, J Mohr, M von Witzleben, U Breuer, R Waser, ... Science advances 6 (19), eaaz9079, 2020 | 67 | 2020 |
| Utilizing the switching stochasticity of HfO2/TiOx-based ReRAM devices and the concept of multiple device synapses for the classification of overlapping and noisy patterns C Bengel, F Cüppers, M Payvand, R Dittmann, R Waser, ... Frontiers in neuroscience 15, 661856, 2021 | 36 | 2021 |
| Intrinsic RESET speed limit of valence change memories M von Witzleben, S Wiefels, A Kindsmüller, P Stasner, F Berg, ... ACS Applied Electronic Materials 3 (12), 5563-5572, 2021 | 22 | 2021 |
| Effect of electron conduction on the read noise characteristics in ReRAM devices K Schnieders, C Funck, F Cüppers, S Aussen, T Kempen, ... APL Materials 10 (10), 2022 | 9 | 2022 |
| An ag/hfo2/pt threshold switching device with an ultra-low leakage (< 10 fa), high on/offratio (> 1011), and low threshold voltage (< 0.2 v) for energy-efficient neuromorphic … SA Chekol, F Cüppers, R Waser, S Hoffmann-Eifert 2021 IEEE International Memory Workshop (IMW), 1-4, 2021 | 9 | 2021 |
| On the switching dynamics of epitaxial ferroelectric CeO2–HfO2 thin film capacitors F Cüppers, K Hirai, H Funakubo Nano Convergence 9 (1), 56, 2022 | 4 | 2022 |
| Characterization of HfO2/TiOx ReRAM Cells in Pulse Operation Mode A Hardtdegen, F Cüppers, M Von Witzleben, U Böttger, S Menzel, ... 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 1-4, 2018 | 4 | 2018 |
| Experimental Validation of Memristor-Aided Logic Using 1T1R TaOx RRAM Crossbar Array A Bende, S Singh, CK Jha, T Kempen, F Cüppers, C Bengel, A Zambanini, ... 2024 37th International Conference on VLSI Design and 2024 23rd …, 2024 | 3 | 2024 |
| Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al2O3/TiOx‐Based Memristive Devices S Aussen, F Cüppers, C Funck, J Jo, S Werner, C Pratsch, S Menzel, ... Advanced Electronic Materials 9 (12), 2300520, 2023 | 1 | 2023 |
| Direct Comparison of the SET Kinetics of a TiOx/Al2O3-based Memristive Cell in Filamentary- and Area-Mode S Aussen, F Cüppers, R Waser, S Hoffmann-Eifert 2022 IEEE 22nd International Conference on Nanotechnology (NANO), 469-472, 2022 | 1 | 2022 |
| Sequence Detection in Bilayer 1T1R RRAM Device with Integrated State Machine S Singh, G Paul, A Bende, T Kempen, F Cüppers, S Patkar, V Rana, ... | | 2024 |
| Effect of Transistor Transfer Characteristics on the Programming Process in 1T1R Configuration X Liu, C Bengel, F Cüppers, O Solfronk, B Zhang, S Hoffmann-Eifert, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Experimental Verification of Uncoupled Memristive Cellular Nonlinear Network by Processing the EDGE Detection Task Y Wang, K Schnieders, V Ntinas, A Ascoli, F Cüppers, S Hoffmann-Eifert, ... Proceedings of the 18th ACM International Symposium on Nanoscale …, 2023 | | 2023 |
| Non-idealities and Design Solutions for Analog Memristor-Based Content-Addressable Memories PP Manea, C Sudarshan, F Cüppers, JP Strachan Proceedings of the 18th ACM International Symposium on Nanoscale …, 2023 | | 2023 |
| Impact of the switching mode on the read noise of ReRAM devices K Schnieders, S Aussen, F Cüppers, S Hoffmann-Eifert, S Wiefels Proceedings of the 18th ACM International Symposium on Nanoscale …, 2023 | | 2023 |
| Engineering the kinetics of redox-based memristive devices for neuromorphic computing R Dittmann, A Sarantopoulos, C Bengel, A Gutsche, F Cüppers, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
