Resistive switching mechanism of thin films grown by atomic-layer deposition BJ Choi, DS Jeong, SK Kim, C Rohde, S Choi, JH Oh, HJ Kim, CS Hwang, ... Journal of applied physics 98 (3), 033715, 2005 | 1403 | 2005 |
Anode-interface localized filamentary mechanism in resistive switching of thin films KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang Applied physics letters 91 (1), 012907, 2007 | 489 | 2007 |
Identification of a determining parameter for resistive switching of thin films C Rohde, BJ Choi, DS Jeong, S Choi, JS Zhao, CS Hwang Applied Physics Letters 86 (26), 262907, 2005 | 394 | 2005 |
Memristors for Energy‐Efficient New Computing Paradigms DS Jeong, KM Kim, S Kim, BJ Choi, CS Hwang Advanced Electronic Materials 2 (9), 1600090, 2016 | 295 | 2016 |
High‐speed and low‐energy nitride memristors BJ Choi, AC Torrezan, JP Strachan, PG Kotula, AJ Lohn, MJ Marinella, ... Advanced Functional Materials 26 (29), 5290-5296, 2016 | 265 | 2016 |
Localized switching mechanism in resistive switching of atomic-layer-deposited thin films KM Kim, BJ Choi, CS Hwang Applied physics letters 90 (24), 242906, 2007 | 265 | 2007 |
Engineering nonlinearity into memristors for passive crossbar applications J Joshua Yang, MX Zhang, MD Pickett, F Miao, J Paul Strachan, WD Li, ... Applied Physics Letters 100 (11), 113501, 2012 | 236 | 2012 |
A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure KM Kim, BJ Choi, MH Lee, GH Kim, SJ Song, JY Seok, JH Yoon, S Han, ... Nanotechnology 22 (25), 254010, 2011 | 205 | 2011 |
Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch BJ Choi, AC Torrezan, KJ Norris, F Miao, JP Strachan, MX Zhang, ... Nano letters 13 (7), 3213-3217, 2013 | 196 | 2013 |
Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application KM Kim, J Zhang, C Graves, JJ Yang, BJ Choi, CS Hwang, Z Li, ... Nano Letters 16 (11), 6724-6732, 2016 | 171 | 2016 |
Study on the resistive switching time of thin films BJ Choi, S Choi, KM Kim, YC Shin, CS Hwang, SY Hwang, S Cho, S Park, ... Applied physics letters 89 (1), 012906, 2006 | 148 | 2006 |
Resistive Switching in Pt∕ Al2O3∕ TiO2∕ Ru Stacked Structures KM Kim, BJ Choi, BW Koo, S Choi, DS Jeong, CS Hwang Electrochemical and solid-state letters 9 (12), G343, 2006 | 146 | 2006 |
Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt‐Dispersed SiO2 Thin Films for ReRAM BJ Choi, ABK Chen, X Yang, IW Chen Advanced Materials 23 (33), 3847-3852, 2011 | 117 | 2011 |
Trilayer tunnel selectors for memristor memory cells BJ Choi, J Zhang, K Norris, G Gibson, KM Kim, W Jackson, MXM Zhang, ... Advanced Materials 28 (2), 356-362, 2016 | 116 | 2016 |
A physical model of switching dynamics in tantalum oxide memristive devices PR Mickel, AJ Lohn, B Joon Choi, J Joshua Yang, MX Zhang, ... Applied Physics Letters 102 (22), 223502, 2013 | 100 | 2013 |
Schottky-type diode switch for the resistive switching memory array YC Shin, J Song, KM Kim, BJ Choi, S Choi, HJ Lee, GH Kim, T Eom, ... Applied Physics Letters 92 (16), 162904, 2008 | 96 | 2008 |
Cyclic PECVD of Ge2Sb2Te5 films using metallorganic sources BJ Choi, S Choi, YC Shin, CS Hwang, JW Lee, J Jeong, YJ Kim, ... Journal of the electrochemical society 154 (4), H318, 2007 | 96 | 2007 |
Influence of carrier injection on resistive switching of thin films with Pt electrodes KM Kim, BJ Choi, DS Jeong, CS Hwang, S Han Applied physics letters 89 (16), 162912, 2006 | 85 | 2006 |
Nitride memristors BJ Choi, JJ Yang, MX Zhang, KJ Norris, DAA Ohlberg, NP Kobayashi, ... Applied Physics A 109 (1), 1-4, 2012 | 77 | 2012 |
Combined atomic layer and chemical vapor deposition, and selective growth of Ge2Sb2Te5 films on TiN/W contact plug BJ Choi, S Choi, YC Shin, KM Kim, CS Hwang, YJ Kim, YJ Son, SK Hong Chemistry of Materials 19 (18), 4387-4389, 2007 | 71 | 2007 |