Follow
Byung Joon Choi
Title
Cited by
Cited by
Year
Resistive switching mechanism of thin films grown by atomic-layer deposition
BJ Choi, DS Jeong, SK Kim, C Rohde, S Choi, JH Oh, HJ Kim, CS Hwang, ...
Journal of applied physics 98 (3), 033715, 2005
13452005
Anode-interface localized filamentary mechanism in resistive switching of thin films
KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang
Applied physics letters 91 (1), 012907, 2007
4692007
Identification of a determining parameter for resistive switching of thin films
C Rohde, BJ Choi, DS Jeong, S Choi, JS Zhao, CS Hwang
Applied Physics Letters 86 (26), 262907, 2005
3872005
Localized switching mechanism in resistive switching of atomic-layer-deposited thin films
KM Kim, BJ Choi, CS Hwang
Applied physics letters 90 (24), 242906, 2007
2612007
Memristors for Energy‐Efficient New Computing Paradigms
DS Jeong, KM Kim, S Kim, BJ Choi, CS Hwang
Advanced Electronic Materials 2 (9), 1600090, 2016
2362016
Engineering nonlinearity into memristors for passive crossbar applications
J Joshua Yang, MX Zhang, MD Pickett, F Miao, J Paul Strachan, WD Li, ...
Applied Physics Letters 100 (11), 113501, 2012
2302012
High‐speed and low‐energy nitride memristors
BJ Choi, AC Torrezan, JP Strachan, PG Kotula, AJ Lohn, MJ Marinella, ...
Advanced Functional Materials 26 (29), 5290-5296, 2016
2012016
A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure
KM Kim, BJ Choi, MH Lee, GH Kim, SJ Song, JY Seok, JH Yoon, S Han, ...
Nanotechnology 22 (25), 254010, 2011
1942011
Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch
BJ Choi, AC Torrezan, KJ Norris, F Miao, JP Strachan, MX Zhang, ...
Nano letters 13 (7), 3213-3217, 2013
1812013
Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application
KM Kim, J Zhang, C Graves, JJ Yang, BJ Choi, CS Hwang, Z Li, ...
Nano Letters 16 (11), 6724-6732, 2016
1442016
Study on the resistive switching time of thin films
BJ Choi, S Choi, KM Kim, YC Shin, CS Hwang, SY Hwang, S Cho, S Park, ...
Applied physics letters 89 (1), 012906, 2006
1412006
Resistive Switching in Pt∕ Al2O3∕ TiO2∕ Ru Stacked Structures
KM Kim, BJ Choi, BW Koo, S Choi, DS Jeong, CS Hwang
Electrochemical and solid-state letters 9 (12), G343, 2006
1352006
Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt‐Dispersed SiO2 Thin Films for ReRAM
BJ Choi, ABK Chen, X Yang, IW Chen
Advanced Materials 23 (33), 3847-3852, 2011
1122011
Trilayer tunnel selectors for memristor memory cells
BJ Choi, J Zhang, K Norris, G Gibson, KM Kim, W Jackson, MXM Zhang, ...
Advanced Materials 28 (2), 356-362, 2016
1022016
Schottky-type diode switch for the resistive switching memory array
YC Shin, J Song, KM Kim, BJ Choi, S Choi, HJ Lee, GH Kim, T Eom, ...
Applied Physics Letters 92 (16), 162904, 2008
942008
A physical model of switching dynamics in tantalum oxide memristive devices
PR Mickel, AJ Lohn, B Joon Choi, J Joshua Yang, MX Zhang, ...
Applied Physics Letters 102 (22), 223502, 2013
922013
Cyclic PECVD of Ge2Sb2Te5 films using metallorganic sources
BJ Choi, S Choi, YC Shin, CS Hwang, JW Lee, J Jeong, YJ Kim, ...
Journal of the electrochemical society 154 (4), H318, 2007
912007
Influence of carrier injection on resistive switching of thin films with Pt electrodes
KM Kim, BJ Choi, DS Jeong, CS Hwang, S Han
Applied physics letters 89 (16), 162912, 2006
792006
Nitride memristors
BJ Choi, JJ Yang, MX Zhang, KJ Norris, DAA Ohlberg, NP Kobayashi, ...
Applied Physics A 109 (1), 1-4, 2012
732012
Combined atomic layer and chemical vapor deposition, and selective growth of Ge2Sb2Te5 films on TiN/W contact plug
BJ Choi, S Choi, YC Shin, KM Kim, CS Hwang, YJ Kim, YJ Son, SK Hong
Chemistry of Materials 19 (18), 4387-4389, 2007
662007
The system can't perform the operation now. Try again later.
Articles 1–20