Laxmi Dhanaraju Varma Sangani
Laxmi Dhanaraju Varma Sangani
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Berry curvature dipole senses topological transition in a moiré superlattice
S Sinha, PC Adak, A Chakraborty, K Das, K Debnath, LDV Sangani, ...
Nature Physics 18 (7), 765-770, 2022
Tunable bandwidths and gaps in twisted double bilayer graphene on the verge of correlations
PC Adak, S Sinha, U Ghorai, LDV Sangani, K Watanabe, T Taniguchi, ...
Physical Review B 101 (12), 125428, 2020
Bulk valley transport and Berry curvature spreading at the edge of flat bands
S Sinha, PC Adak, RS Surya Kanthi, BL Chittari, LDV Sangani, ...
Nature communications 11 (1), 5548, 2020
Single and twinned plates of 2D layered BiI 3 for use as nanoscale pressure sensors
MD Prasad, LDV Sangani, SK Batabyal, MG Krishna
CrystEngComm 20 (33), 4857-4866, 2018
Scanning near field optical microscopy of gold nano-disc arrays fabricated by electron beam lithography and their application as surface enhanced Raman scattering substrates
MA Mohiddon, LDV Sangani, MG Krishna
Chemical Physics Letters 588, 160-166, 2013
Low temperature Au induced crystallization of titanium dioxide thin films for resistive switching applications
LDV Sangani, KV Sri, MA Mohiddon, MG Krishna
RSC Advances 5 (83), 67493-67499, 2015
Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices
N Arun, LDV Sangani, K Vinod Kumar, A Mangababu, MG Krishna, ...
Journal of Materials Science: Materials in Electronics 32, 2973-2986, 2021
Optical and resistive switching properties of Chitosan-aluminum-doped zinc oxide composite thin films for transparent resistive random access memory application
S Vallabhapurapu, LDV Sangani, MG Krishna, J Das, A Srinivasan, ...
Journal of Materials Science: Materials in Electronics 32, 3556-3565, 2021
Interfacial electrode-driven enhancement of the switching parameters of a copper oxide-based resistive random-access memory device
LDV Sangani, CR Kumar, MG Krishna
Journal of Electronic Materials 45, 322-328, 2016
Optical confinement in TiO2 waveguides fabricated by resist free electron beam lithography
LDV Sangani, MA Mohiddon, G Rajaram, MG Krishna
Optics & Laser Technology 123, 105901, 2020
Resistive switching in reduced graphene oxide incorporated polyvinyl alcohol films
S Vallabhapurapu, LDV Sangani, MG Krishna, VV Srinivasu, C Du, S Du, ...
Materials Today: Proceedings 9, 615-620, 2019
The role of work function and band gap in resistive switching behaviour of ZnTe thin films
S Rowtu, LDV Sangani, MG Krishna
Journal of Electronic Materials 47, 1620-1629, 2018
Facile deterministic cutting of 2D materials for twistronics using a tapered fibre scalpel
LDV Sangani, RSS Kanthi, PC Adak, S Sinha, AH Marchawala, ...
Nanotechnology 31 (32), 32LT02, 2020
Resistive switching behaviour in PMMA/Al: ZnO composite films
S Vallabhapurapu, LDV Sangani, MG Krishna, J Das, C Tu, S Du, ...
Acta Phys. Pol 134 (1), 68-70, 2018
Perpendicular electric field drives Chern transitions and layer polarization changes in Hofstadter bands
PC Adak, S Sinha, D Giri, DK Mukherjee, Chandan, LDV Sangani, ...
Nature Communications 13 (1), 7781, 2022
Dynamics of interfacial bubble controls adhesion mechanics in van der Waals heterostructure
LDV Sangani, S Mandal, S Ghosh, K Watanabe, T Taniguchi, ...
Nano Letters 22 (9), 3612-3619, 2022
Oxygen Affinity of Metal Electrodes as Control Parameter in Tuning the Performance of CuxO Based Resistive Random Access Memory Devices
LDV Sangani, MG Krishna
physica status solidi (a), 2019
Photo-induced wettability of film with Au buffer layer
DD Purkayastha, LDV Sangani, MG Krishna, V Madhurima
AIP Conference Proceedings 1591 (1), 881-883, 2014
Ag-ZnO nanostructure for ANTA explosive molecule detection
UP Shaik, LD Sangani, A Gaur, MA Mohiddon, MG Krishna
AIP Conference Proceedings 1731 (1), 2016
Superconducting magic-angle twisted trilayer graphene hosts competing magnetic order and moir\'e inhomogeneities
A Mukherjee, S Layek, S Sinha, R Kundu, AH Marchawala, M Hingankar, ...
arXiv preprint arXiv:2406.02521, 2024
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