Jeonghwan Song
Jeonghwan Song
Dept. of Materials Science & Engineering, POSTECH
Verified email at postech.ac.kr - Homepage
Title
Cited by
Cited by
Year
Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems
J Woo, K Moon, J Song, S Lee, M Kwak, J Park, H Hwang
IEEE Electron Device Letters 37 (8), 994-997, 2016
2362016
HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
S Oh, T Kim, M Kwak, J Song, J Woo, S Jeon, IK Yoo, H Hwang
IEEE Electron Device Letters 38 (6), 732-735, 2017
1322017
Threshold selector with high selectivity and steep slope for cross-point memory array
J Song, J Woo, A Prakash, D Lee, H Hwang
IEEE Electron Device Letters 36 (7), 681-683, 2015
1152015
Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering
A Prakash, J Park, J Song, J Woo, EJ Cha, H Hwang
IEEE Electron Device Letters 36 (1), 32-34, 2014
932014
Nanoscale (∼10nm) 3D vertical ReRAM and NbO2threshold selector with TiN electrode
E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ...
2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013
812013
Nanoscale (∼10nm) 3D vertical ReRAM and NbO2threshold selector with TiN electrode
E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ...
2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013
812013
Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application
A Prakash, D Deleruyelle, J Song, M Bocquet, H Hwang
Applied Physics Letters 106 (23), 233104, 2015
682015
Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems
J Woo, K Moon, J Song, M Kwak, J Park, H Hwang
IEEE Transactions on Electron Devices 63 (12), 5064-5067, 2016
542016
Improved synapse device with MLC and conductance linearity using quantized conduction for neuromorphic systems
S Lim, C Sung, H Kim, T Kim, J Song, JJ Kim, H Hwang
IEEE Electron Device Letters 39 (2), 312-315, 2018
452018
Nanometer‐Scale Phase Transformation Determines Threshold and Memory Switching Mechanism
BG Chae, JB Seol, JH Song, K Baek, SH Oh, H Hwang, CG Park
Advanced materials 29 (30), 1701752, 2017
432017
Various threshold switching devices for integrate and fire neuron applications
D Lee, M Kwak, K Moon, W Choi, J Park, J Yoo, J Song, S Lim, C Sung, ...
Advanced Electronic Materials 5 (9), 1800866, 2019
402019
Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics
J Yoo, J Woo, J Song, H Hwang
AIP Advances 5 (12), 127221, 2015
402015
Structurally engineered stackable and scalable 3D titanium‐oxide switching devices for high‐density nanoscale memory
D Lee, J Park, J Park, J Woo, E Cha, S Lee, K Moon, J Song, Y Koo, ...
Advanced Materials 27 (1), 59-64, 2015
402015
Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device
J Song, J Woo, S Lee, A Prakash, J Yoo, K Moon, H Hwang
IEEE Electron Device Letters 37 (7), 932-934, 2016
382016
Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices
J Yoo, J Park, J Song, S Lim, H Hwang
Applied Physics Letters 111 (6), 063109, 2017
342017
Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application
J Song, A Prakash, D Lee, J Woo, E Cha, S Lee, H Hwang
Applied Physics Letters 107 (11), 113504, 2015
332015
Hardware implementation of associative memory characteristics with analogue-type resistive-switching device
K Moon, S Park, J Jang, D Lee, J Woo, E Cha, S Lee, J Park, J Song, ...
Nanotechnology 25 (49), 495204, 2014
312014
Effects of RESET current overshoot and resistance state on reliability of RRAM
J Song, D Lee, J Woo, Y Koo, E Cha, S Lee, J Park, K Moon, SH Misha, ...
IEEE electron device letters 35 (6), 636-638, 2014
312014
Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system
C Sung, S Lim, H Kim, T Kim, K Moon, J Song, JJ Kim, H Hwang
Nanotechnology 29 (11), 115203, 2018
282018
Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory
FG Aga, J Woo, J Song, J Park, S Lim, C Sung, H Hwang
Nanotechnology 28 (11), 115707, 2017
262017
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