| Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature B Mayer, D Rudolph, J Schnell, S Morkötter, J Winnerl, J Treu, K Müller, ... Nature communications 4 (1), 2931, 2013 | 268 | 2013 |
| Monolithically integrated high-β nanowire lasers on silicon B Mayer, L Janker, B Loitsch, J Treu, T Kostenbader, S Lichtmannecker, ... Nano letters 16 (1), 152-156, 2016 | 158 | 2016 |
| Enhanced luminescence properties of InAs–InAsP core–shell nanowires J Treu, M Bormann, H Schmeiduch, M Döblinger, S Morkötter, ... Nano letters 13 (12), 6070-6077, 2013 | 88 | 2013 |
| Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires M Speckbacher, J Treu, TJ Whittles, WM Linhart, X Xu, K Saller, ... Nano letters 16 (8), 5135-5142, 2016 | 77 | 2016 |
| Measuring three-dimensional strain and structural defects in a single InGaAs nanowire using coherent X-ray multiangle Bragg projection ptychography MO Hill, I Calvo-Almazan, M Allain, MV Holt, A Ulvestad, J Treu, ... Nano letters 18 (2), 811-819, 2018 | 72 | 2018 |
| Lattice-matched InGaAs–InAlAs core–shell nanowires with improved luminescence and photoresponse properties J Treu, T Stettner, M Watzinger, S Morkötter, M Döblinger, S Matich, ... Nano letters 15 (5), 3533-3540, 2015 | 62 | 2015 |
| Role of microstructure on optical properties in high-uniformity InGaAs nanowire arrays: Evidence of a wider wurtzite band gap S Morkötter, S Funk, M Liang, M Döblinger, S Hertenberger, J Treu, ... Physical Review B 87 (20), 205303, 2013 | 59 | 2013 |
| Strong terahertz emission and its origin from catalyst-free InAs nanowire arrays A Arlauskas, J Treu, K Saller, I Beleckaite, G Koblmüller, A Krotkus Nano letters 14 (3), 1508-1514, 2014 | 44 | 2014 |
| Substrate orientation dependent fine structure splitting of symmetric In(Ga)As/GaAs quantum dots J Treu, C Schneider, A Huggenberger, T Braun, S Reitzenstein, S Höfling, ... Appl. Phys. Lett 101, 022102, 2012 | 39 | 2012 |
| Photocurrents in a single InAs nanowire/silicon heterojunction A Brenneis, J Overbeck, J Treu, S Hertenberger, S Morkötter, ... ACS nano 9 (10), 9849-9858, 2015 | 38 | 2015 |
| Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy J Treu, M Speckbacher, K Saller, S Morkötter, M Döblinger, X Xu, H Riedl, ... Applied Physics Letters 108 (5), 2016 | 35 | 2016 |
| Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties F del Giudice, J Becker, C de Rose, M Doeblinger, D Ruhstorfer, ... Nanoscale 12 (42), 21857-21868, 2020 | 21 | 2020 |
| Contactless optical characterization of carrier dynamics in free-standing InAs-InAlAs core–shell nanowires on silicon X Li, K Zhang, J Treu, L Stampfer, G Koblmueller, F Toor, JP Prineas Nano letters 19 (2), 990-996, 2019 | 21 | 2019 |
| Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires M Sonner, J Treu, K Saller, H Riedl, JJ Finley, G Koblmüller Applied Physics Letters 112 (9), 2018 | 19 | 2018 |
| Carrier trapping and activation at short-period wurtzite/zinc-blende stacking sequences in polytypic InAs nanowires J Becker, S Morkötter, J Treu, M Sonner, M Speckbacher, M Döblinger, ... Physical Review B 97 (11), 115306, 2018 | 18 | 2018 |
| Correlated chemical and electrically active dopant analysis in catalyst-free Si-doped InAs nanowires J Becker, MO Hill, M Sonner, J Treu, M Döblinger, A Hirler, H Riedl, ... ACS nano 12 (2), 1603-1610, 2018 | 16 | 2018 |
| Optical absorption of composition-tunable InGaAs nanowire arrays J Treu, X Xu, K Ott, K Saller, G Abstreiter, JJ Finley, G Koblmüller Nanotechnology 30 (49), 495703, 2019 | 14 | 2019 |
| Charge-neutral nonlocal response in superconductor-InAs nanowire hybrid devices AO Denisov, AV Bubis, SU Piatrusha, NA Titova, AG Nasibulin, J Becker, ... Semiconductor Science and Technology 36 (9), 09LT04, 2021 | 12 | 2021 |
| Enhanced THz emission efficiency of composition-tunable InGaAs nanowire arrays I Beleckaitė, J Treu, S Morkötter, M Döblinger, X Xu, R Adomavičius, ... Applied Physics Letters 110 (20), 2017 | 11 | 2017 |
| Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions AV Bubis, AO Denisov, SU Piatrusha, IE Batov, VS Khrapai, J Becker, ... Semiconductor Science and Technology 32 (9), 094007, 2017 | 9 | 2017 |
