| Effects of passivating ionic films on the photoluminescence properties of GaAs BJ Skromme, CJ Sandroff, E Yablonovitch, T Gmitter Applied physics letters 51 (24), 2022-2024, 1987 | 281 | 1987 |
| Electrical characteristics of Schottky barriers on 4H-SiC: The effects of barrier height nonuniformity BJ Skromme, E Luckowski, K Moore, M Bhatnagar, CE Weitzel, T Gehoski, ... Journal of Electronic Materials 29, 376-383, 2000 | 140 | 2000 |
| Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces E Yablonovitch, BJ Skromme, R Bhat, JP Harbison, TJ Gmitter Applied physics letters 54 (6), 555-557, 1989 | 131 | 1989 |
| Growth of high‐quality GaAs using trimethylgallium and diethylarsine R Bhat, MA Koza, BJ Skromme Applied physics letters 50 (17), 1194-1196, 1987 | 112 | 1987 |
| Characterization of high‐purity Si‐doped molecular beam epitaxial GaAs BJ Skromme, SS Bose, B Lee, TS Low, TR Lepkowski, RY DeJule, ... Journal of applied physics 58 (12), 4685-4702, 1985 | 112 | 1985 |
| Band-edge exciton states in AlN single crystals and epitaxial layers L Chen, BJ Skromme, RF Dalmau, R Schlesser, Z Sitar, C Chen, W Sun, ... Applied physics letters 85 (19), 4334-4336, 2004 | 110 | 2004 |
| Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy J Jayapalan, BJ Skromme, RP Vaudo, VM Phanse Applied physics letters 73 (9), 1188-1190, 1998 | 93 | 1998 |
| Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy BJ Skromme, J Jayapalan, RP Vaudo, VM Phanse Applied physics letters 74 (16), 2358-2360, 1999 | 85 | 1999 |
| Strain determination in heteroepitaxial GaN BJ Skromme, H Zhao, D Wang, HS Kong, MT Leonard, GE Bulman, ... Applied Physics Letters 71 (6), 829-831, 1997 | 85 | 1997 |
| Surface recombination and sulfide passivation of GaN GL Martinez, MR Curiel, BJ Skromme, RJ Molnar Journal of Electronic Materials 29, 325-331, 2000 | 84 | 2000 |
| Photoluminescence identification of the C and Be acceptor levels in InP BJ Skromme, GE Stillman, JD Oberstar, SS Chan Journal of electronic materials 13, 463-491, 1984 | 82 | 1984 |
| InGaAs/InP superlattice mixing induced by Zn or Si diffusion SA Schwarz, P Mei, T Venkatesan, R Bhat, DM Hwang, CL Schwartz, ... Applied physics letters 53 (12), 1051-1053, 1988 | 78 | 1988 |
| Design and optimization of junction termination extension (JTE) for 4H–SiC high voltage Schottky diodes A Mahajan, BJ Skromme Solid-State Electronics 49 (6), 945-955, 2005 | 71 | 2005 |
| Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H–SiC Schottky diodes Y Wang, GN Ali, MK Mikhov, V Vaidyanathan, BJ Skromme, ... Journal of applied physics 97 (1), 2005 | 68 | 2005 |
| Growth and characterization of pseudomorphic single crystal zinc blende MnS BJ Skromme, Y Zhang, DJ Smith, S Sivananthan Applied physics letters 67 (18), 2690-2692, 1995 | 68 | 1995 |
| Oxidation-induced crystallographic transformation in heavily N-doped 4H-SiC wafers BJ Skromme, K Palle, CD Poweleit, LR Bryant, WM Vetter, M Dudley, ... Materials Science Forum 389 (1), 455-458, 2002 | 67 | 2002 |
| Effects of thermal strain on the optical properties of heteroepitaxial ZnTe Y Zhang, BJ Skromme, FS Turco-Sandroff Physical Review B 46 (7), 3872, 1992 | 64 | 1992 |
| Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE BJ Skromme, TS Low, TJ Roth, GE Stillman, JK Kennedy, JK Abrokwah Journal of electronic materials 12, 433-457, 1983 | 64 | 1983 |
| Photoluminescence characterization of ZnSe doped with Ga by bulk and planar doping techniques in molecular‐beam epitaxy BJ Skromme, SM Shibli, JL De Miguel, MC Tamargo Journal of applied physics 65 (10), 3999-4005, 1989 | 57 | 1989 |
| Excited-state-donor—to—acceptor transitions in the photoluminescence spectrum of GaAs and InP BJ Skromme, GE Stillman Physical Review B 29 (4), 1982, 1984 | 52 | 1984 |
