Dmitry Zhernokletov
Dmitry Zhernokletov
Intermolecular Inc.
Verified email at intermolecular.com
Title
Cited by
Cited by
Year
Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
RV Galatage, DM Zhernokletov, H Dong, B Brennan, CL Hinkle, ...
Journal of Applied Physics 116 (1), 014504, 2014
692014
Epitaxial integration of ferromagnetic correlated oxide with Si (100)
A Posadas, M Berg, H Seo, A De Lozanne, AA Demkov, DJ Smith, AP Kirk, ...
Applied Physics Letters 98 (5), 053104, 2011
672011
Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors
RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ...
Applied Physics Letters 99 (17), 172901, 2011
572011
Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems
S McDonnell, H Dong, JM Hawkins, B Brennan, M Milojevic, ...
Applied Physics Letters 100 (14), 141606, 2012
552012
In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution
S McDonnell, DM Zhernokletov, AP Kirk, J Kim, RM Wallace
Applied surface science 257 (20), 8747-8751, 2011
522011
Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors
RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ...
Applied Physics Letters 102 (13), 132903, 2013
432013
Indium diffusion through high-k dielectrics in high-k/InP stacks
H Dong, W Cabrera, RV Galatage, KC Santosh, B Brennan, X Qin, ...
Applied Physics Letters 103 (6), 061601, 2013
412013
In situ surface pre-treatment study of GaAs and In0.53Ga0.47As
B Brennan, DM Zhernokletov, H Dong, CL Hinkle, J Kim, RM Wallace
Applied Physics Letters 100 (15), 151603, 2012
382012
Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition
DM Zhernokletov, MA Negara, RD Long, S Aloni, D Nordlund, ...
ACS applied materials & interfaces 7 (23), 12774-12780, 2015
372015
Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces
DM Zhernokletov, H Dong, B Brennan, M Yakimov, V Tokranov, ...
Applied Physics Letters 102 (13), 131602, 2013
322013
Optimization of the ammonium sulfide (NH4)2S passivation process on InSb(111)A
DM Zhernokletov, H Dong, B Brennan, J Kim, RM Wallace
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
272012
Strain-induced ferromagnetism in LaCoO3: Theory and growth on Si (1 0 0)
A Posadas, M Berg, H Seo, DJ Smith, AP Kirk, D Zhernokletov, ...
Microelectronic engineering 88 (7), 1444-1447, 2011
242011
In situ study of HfO2 atomic layer deposition on InP(100)
H Dong, B Brennan, D Zhernokletov, J Kim, CL Hinkle, RM Wallace
Applied Physics Letters 102 (17), 171602, 2013
222013
New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of …
M Xu, JJ Gu, C Wang, DM Zhernokletov, RM Wallace, PD Ye
Journal of Applied Physics 113 (1), 013711, 2013
222013
Interfacial bonding and electronic structure of HfO2/GaSb interfaces: A first principles study
K Xiong, W Wang, DM Zhernokletov, S KC, RC Longo, RM Wallace, ...
Applied Physics Letters 102 (2), 022901, 2013
202013
In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP
H Dong, KC Santosh, X Qin, B Brennan, S McDonnell, D Zhernokletov, ...
Journal of Applied Physics 114 (15), 154105, 2013
162013
Surface and interfacial reaction study of InAs (100)-crystalline oxide interface
DM Zhernokletov, P Laukkanen, H Dong, RV Galatage, B Brennan, ...
Applied Physics Letters 102 (21), 211601, 2013
142013
Silicon Interfacial Passivation Layer Chemistry for High-k/InP Interfaces
H Dong, W Cabrera, X Qin, B Brennan, D Zhernokletov, CL Hinkle, J Kim, ...
ACS applied materials & interfaces 6 (10), 7340-7345, 2014
132014
Surface and interfacial reaction study of half cycle atomic layer deposited Al2O3 on chemically treated InP surfaces
B Brennan, H Dong, D Zhernokletov, J Kim, RM Wallace
Applied Physics Express 4 (12), 125701, 2011
132011
Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100)
DM Zhernokletov, H Dong, B Brennan, J Kim, RM Wallace, M Yakimov, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (6 …, 2013
112013
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