| Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states RV Galatage, DM Zhernokletov, H Dong, B Brennan, CL Hinkle, ... Journal of Applied Physics 116 (1), 014504, 2014 | 72 | 2014 |
| Epitaxial integration of ferromagnetic correlated oxide with Si (100) A Posadas, M Berg, H Seo, A De Lozanne, AA Demkov, DJ Smith, AP Kirk, ... Applied Physics Letters 98 (5), 053104, 2011 | 69 | 2011 |
| Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ... Applied Physics Letters 99 (17), 172901, 2011 | 62 | 2011 |
| Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems S McDonnell, H Dong, JM Hawkins, B Brennan, M Milojevic, ... Applied Physics Letters 100 (14), 141606, 2012 | 57 | 2012 |
| In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution S McDonnell, DM Zhernokletov, AP Kirk, J Kim, RM Wallace Applied surface science 257 (20), 8747-8751, 2011 | 56 | 2011 |
| Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ... Applied Physics Letters 102 (13), 132903, 2013 | 45 | 2013 |
| Indium diffusion through high-k dielectrics in high-k/InP stacks H Dong, W Cabrera, RV Galatage, KC Santosh, B Brennan, X Qin, ... Applied Physics Letters 103 (6), 061601, 2013 | 43 | 2013 |
| Surface and interfacial reaction study of half cycle atomic layer deposited Al2O3 on chemically treated InP surfaces B Brennan, H Dong, D Zhernokletov, J Kim, RM Wallace Applied Physics Express 4 (12), 125701, 2011 | 41 | 2011 |
| Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition DM Zhernokletov, MA Negara, RD Long, S Aloni, D Nordlund, ... ACS applied materials & interfaces 7 (23), 12774-12780, 2015 | 38 | 2015 |
| In situ surface pre-treatment study of GaAs and In0.53Ga0.47As B Brennan, DM Zhernokletov, H Dong, CL Hinkle, J Kim, RM Wallace Applied Physics Letters 100 (15), 151603, 2012 | 38 | 2012 |
| Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces DM Zhernokletov, H Dong, B Brennan, M Yakimov, V Tokranov, ... Applied Physics Letters 102 (13), 131602, 2013 | 34 | 2013 |
| Optimization of the ammonium sulfide (NH4)2S passivation process on InSb(111)A DM Zhernokletov, H Dong, B Brennan, J Kim, RM Wallace Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012 | 28 | 2012 |
| New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of … M Xu, JJ Gu, C Wang, DM Zhernokletov, RM Wallace, PD Ye Journal of Applied Physics 113 (1), 013711, 2013 | 24 | 2013 |
| Strain-induced ferromagnetism in LaCoO3: Theory and growth on Si (1 0 0) A Posadas, M Berg, H Seo, DJ Smith, AP Kirk, D Zhernokletov, ... Microelectronic engineering 88 (7), 1444-1447, 2011 | 24 | 2011 |
| In situ study of HfO2 atomic layer deposition on InP(100) H Dong, B Brennan, D Zhernokletov, J Kim, CL Hinkle, RM Wallace Applied Physics Letters 102 (17), 171602, 2013 | 22 | 2013 |
| Interfacial bonding and electronic structure of HfO2/GaSb interfaces: A first principles study K Xiong, W Wang, DM Zhernokletov, S KC, RC Longo, RM Wallace, ... Applied Physics Letters 102 (2), 022901, 2013 | 20 | 2013 |
| In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP H Dong, KC Santosh, X Qin, B Brennan, S McDonnell, D Zhernokletov, ... Journal of Applied Physics 114 (15), 154105, 2013 | 17 | 2013 |
| Silicon Interfacial Passivation Layer Chemistry for High-k/InP Interfaces H Dong, W Cabrera, X Qin, B Brennan, D Zhernokletov, CL Hinkle, J Kim, ... ACS Applied Materials & Interfaces 6 (10), 7340-7345, 2014 | 15 | 2014 |
| Surface and interfacial reaction study of InAs (100)-crystalline oxide interface DM Zhernokletov, P Laukkanen, H Dong, RV Galatage, B Brennan, ... Applied Physics Letters 102 (21), 211601, 2013 | 14 | 2013 |
| Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100) DM Zhernokletov, H Dong, B Brennan, J Kim, RM Wallace, M Yakimov, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (6 …, 2013 | 13 | 2013 |
