| The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors G Jiang, Y Lv, Z Lin, Y Liu, M Wang, H Zhou Superlattices and Microstructures 156, 106987, 2021 | 7 | 2021 |
| Monte Carlo investigation of high-field electron transport properties in AlGaN/GaN HFETs M Wang, Y Lv, Z Wen, H Zhou, P Cui, Z Lin IEEE Electron Device Letters 43 (12), 2041-2044, 2022 | 6 | 2022 |
| Study of electrical transport properties of GaN-based side-gate heterostructure transistors H Zhou, Y Lv, M Wang, P Cui, Z Lin Applied Physics Letters 121 (21), 2022 | 4 | 2022 |
| A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate Y Liu, Y Lv, H Zhou, Z Lin, Y Yang, G Jiang, Y Zhou, M Wang AIP Advances 12 (2), 2022 | 3 | 2022 |
| A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs M Wang, Y Lv, H Zhou, Z Wen, P Cui, C Liu, Z Lin IEEE Transactions on Electron Devices, 2023 | 2 | 2023 |
| Influence of polarization Coulomb field scattering on the sub-60 mV/dec switching of AlGaN/GaN HFETs Y Yang, Z Lin, M Wang, H Zhou, Y Liu, G Jiang IEEE Transactions on Electron Devices 69 (1), 63-68, 2021 | 2 | 2021 |
| Study on the frequency characteristics of split-gate AlGaN/GaN HFETs H Zhou, Y Lv, Y Liu, M Wang, P Cui, Z Lin Modern Physics Letters B 38 (12), 2450092, 2024 | | 2024 |
| Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs M Wang, H Zhou, C Liu, Z Lin, Y Zeng, P Cui Applied Physics Letters 124 (15), 2024 | | 2024 |
| Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors H Zhou, Y Lv, C Liu, M Yang, Z Lin, Y Liu, M Wang Solid-State Electronics 212, 108833, 2024 | | 2024 |
| Modeling of The Gate Bias-Dependent Velocity-Field Relationship and Physics-based Current-Voltage Characteristics in AlGaN/GaN HFETs M Wang, Y Lv, H Zhou, P Cui, Z Lin IEEE Access, 2024 | | 2024 |
| Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT M Wang, Y Lv, H Zhou, P Cui, C Liu, Z Lin IEEE Electron Device Letters, 2023 | | 2023 |
| Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors G Jiang, P Cui, G Zhang, Y Zeng, G Yang, C Fu, Z Lin, M Wang, H Zhou Microelectronics Journal 129, 105602, 2022 | | 2022 |
| Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method Y Yang, Z Lin, M Wang, H Zhou, Y Liu, G Jiang AIP Advances 11 (8), 2021 | | 2021 |
Chao LiuShandong University; HKUST; EPFLVerified email at sdu.edu.cn
