| Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems A Wedig, M Luebben, DY Cho, M Moors, K Skaja, V Rana, T Hasegawa, ... Nature nanotechnology 11 (1), 67-74, 2016 | 541 | 2016 |
| Ferroelectricity Driven by Y -ness with Rehybridization in DY Cho, JY Kim, BG Park, KJ Rho, JH Park, HJ Noh, BJ Kim, SJ Oh, ... Physical Review Letters 98 (21), 217601, 2007 | 152 | 2007 |
| Electronic structures of hexagonal R Mn O 3 (R= Gd, Tb, Dy, and Ho) thin films: Optical spectroscopy and first-principles calculations WS Choi, DG Kim, SSA Seo, SJ Moon, D Lee, JH Lee, HS Lee, DY Cho, ... Physical Review B 77 (4), 045137, 2008 | 115 | 2008 |
| Interfacial metal–oxide interactions in resistive switching memories DY Cho, M Luebben, S Wiefels, KS Lee, I Valov ACS applied materials & interfaces 9 (22), 19287-19295, 2017 | 99 | 2017 |
| Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition DY Cho, HS Jung, IH Yu, JH Yoon, HK Kim, SY Lee, SH Jeon, S Han, ... Chemistry of Materials 24 (18), 3534-3543, 2012 | 87 | 2012 |
| Local structure and conduction mechanism in amorphous In–Ga–Zn–O films DY Cho, J Song, KD Na, CS Hwang, JH Jeong, JK Jeong, YG Mo Applied Physics Letters 94 (11), 112112, 2009 | 78 | 2009 |
| Role of oxygen vacancy in interfaces DY Cho, SJ Oh, YJ Chang, TW Noh, R Jung, JC Lee Applied Physics Letters 88 (19), 193502, 2006 | 69 | 2006 |
| Precision Interface Engineering of an Atomic Layer in Bulk Bi2Te3 Alloys for High Thermoelectric Performance KC Kim, SS Lim, SH Lee, J Hong, DY Cho, AY Mohamed, CM Koo, ... ACS nano 13 (6), 7146-7154, 2019 | 66 | 2019 |
| Structural properties and electronic structure of HfO 2-ZrO 2 composite films DY Cho, HS Jung, CS Hwang Physical Review B 82 (9), 094104, 2010 | 65 | 2010 |
| Electrochemical tantalum oxide for resistive switching memories A Zaffora, DY Cho, KS Lee, F Di Quarto, R Waser, M Santamaria, I Valov Advanced Materials 29 (43), 1703357, 2017 | 64 | 2017 |
| Theoretical insight into the structure-property relationship of mixed transition metal oxides nanofibers doped in activated carbon and 3D graphene for capacitive deionization AS Yasin, AY Mohamed, IMA Mohamed, DY Cho, CH Park, CS Kim Chemical Engineering Journal 371, 166-181, 2019 | 63 | 2019 |
| Mixing between and orbitals in NaIrO: A spectroscopic and density functional calculation study CH Sohn, HS Kim, TF Qi, DW Jeong, HJ Park, HK Yoo, HH Kim, JY Kim, ... Physical Review B 88 (8), 085125, 2013 | 60 | 2013 |
| A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory GH Kim, KM Kim, JY Seok, HJ Lee, DY Cho, JH Han, CS Hwang Nanotechnology 21 (38), 385202, 2010 | 59 | 2010 |
| Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories T Eom, S Choi, BJ Choi, MH Lee, T Gwon, SH Rha, W Lee, MS Kim, ... Chemistry of Materials 24 (11), 2099-2110, 2012 | 58 | 2012 |
| Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor … BJ Choi, S Choi, T Eom, SW Ryu, DY Cho, J Heo, HJ Kim, CS Hwang, ... Chemistry of Materials 21 (12), 2386-2396, 2009 | 58 | 2009 |
| Bond nature of active metal ions in SiO 2-based electrochemical metallization memory cells DY Cho, S Tappertzhofen, R Waser, I Valov Nanoscale 5 (5), 1781-1784, 2013 | 57 | 2013 |
| Phonon-assisted optical excitation in the narrow bandgap Mott insulator HJ Park, CH Sohn, DW Jeong, G Cao, KW Kim, SJ Moon, H Jin, DY Cho, ... Physical Review B 89 (15), 155115, 2014 | 56 | 2014 |
| Control of silicidation in interfaces DY Cho, KS Park, BH Choi, SJ Oh, YJ Chang, DH Kim, TW Noh, R Jung, ... Applied Physics Letters 86 (4), 041913, 2005 | 54 | 2005 |
| Spectroscopic investigation of the hole states in Ni-deficient NiO films DY Cho, SJ Song, UK Kim, KM Kim, HK Lee, CS Hwang Journal of Materials Chemistry C 1 (28), 4334-4338, 2013 | 47 | 2013 |
| Direct observation of charge transfer in solid electrolyte for electrochemical metallization memory DY Cho, I Valov, J van den Hurk, S Tappertzhofen, R Waser Advanced Materials 24 (33), 4552-4556, 2012 | 47 | 2012 |
