Deok-Yong Cho
Deok-Yong Cho
Jeonbuk National University
jbnu.ac.kr의 이메일 확인됨 - 홈페이지
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Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
A Wedig, M Luebben, DY Cho, M Moors, K Skaja, V Rana, T Hasegawa, ...
Nature nanotechnology 11 (1), 67, 2016
3382016
Ferroelectricity Driven by Y -ness with Rehybridization in
DY Cho, JY Kim, BG Park, KJ Rho, JH Park, HJ Noh, BJ Kim, SJ Oh, ...
Physical Review Letters 98 (21), 217601, 2007
1382007
Electronic structures of hexagonal (, Tb, Dy, and Ho) thin films: Optical spectroscopy and first-principles calculations
WS Choi, DG Kim, SSA Seo, SJ Moon, D Lee, JH Lee, HS Lee, DY Cho, ...
Physical Review B 77 (4), 045137, 2008
1012008
Electronic structures of hexagonal R Mn O 3 (R= Gd, Tb, Dy, and Ho) thin films: Optical spectroscopy and first-principles calculations
WS Choi, DG Kim, SSA Seo, SJ Moon, D Lee, JH Lee, HS Lee, DY Cho, ...
Physical Review B 77 (4), 045137, 2008
1012008
Electronic structures of hexagonal R Mn O 3 (R= Gd, Tb, Dy, and Ho) thin films: Optical spectroscopy and first-principles calculations
WS Choi, DG Kim, SSA Seo, SJ Moon, D Lee, JH Lee, HS Lee, DY Cho, ...
Physical Review B 77 (4), 045137, 2008
1012008
Local structure and conduction mechanism in amorphous In–Ga–Zn–O films
DY Cho, J Song, KD Na, CS Hwang, JH Jeong, JK Jeong, YG Mo
Applied Physics Letters 94 (11), 112112, 2009
702009
Role of oxygen vacancy in interfaces
DY Cho, SJ Oh, YJ Chang, TW Noh, R Jung, JC Lee
Applied physics letters 88 (19), 193502, 2006
622006
Interfacial metal–oxide interactions in resistive switching memories
DY Cho, M Luebben, S Wiefels, KS Lee, I Valov
ACS applied materials & interfaces 9 (22), 19287-19295, 2017
552017
A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory
GH Kim, KM Kim, JY Seok, HJ Lee, DY Cho, JH Han, CS Hwang
Nanotechnology 21 (38), 385202, 2010
502010
Control of silicidation in interfaces
DY Cho, KS Park, BH Choi, SJ Oh, YJ Chang, DH Kim, TW Noh, R Jung, ...
Applied Physics Letters 86 (4), 041913, 2005
502005
Control of silicidation in interfaces
DY Cho, KS Park, BH Choi, SJ Oh, YJ Chang, DH Kim, TW Noh, R Jung, ...
Applied Physics Letters 86 (4), 041913, 2005
502005
Phonon-assisted optical excitation in the narrow bandgap Mott insulator
HJ Park, CH Sohn, DW Jeong, G Cao, KW Kim, SJ Moon, H Jin, DY Cho, ...
Physical Review B 89 (15), 155115, 2014
482014
Mixing between and orbitals in NaIrO: A spectroscopic and density functional calculation study
CH Sohn, HS Kim, TF Qi, DW Jeong, HJ Park, HK Yoo, HH Kim, JY Kim, ...
Physical Review B 88 (8), 085125, 2013
462013
Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor …
BJ Choi, S Choi, T Eom, SW Ryu, DY Cho, J Heo, HJ Kim, CS Hwang, ...
Chemistry of Materials 21 (12), 2386-2396, 2009
462009
Structural properties and electronic structure of HfO 2-ZrO 2 composite films
DY Cho, HS Jung, CS Hwang
Physical Review B 82 (9), 094104, 2010
422010
Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition
DY Cho, HS Jung, IH Yu, JH Yoon, HK Kim, SY Lee, SH Jeon, S Han, ...
Chemistry of Materials 24 (18), 3534-3543, 2012
402012
Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
T Eom, S Choi, BJ Choi, MH Lee, T Gwon, SH Rha, W Lee, MS Kim, ...
Chemistry of Materials 24 (11), 2099-2110, 2012
402012
Bond nature of active metal ions in SiO 2-based electrochemical metallization memory cells
DY Cho, S Tappertzhofen, R Waser, I Valov
Nanoscale 5 (5), 1781-1784, 2013
392013
Effect of oxygen partial pressure on the Fermi level of films fabricated by pulsed laser deposition
CH Min, S Cho, SH Lee, DY Cho, WG Park, JG Chung, E Lee, JC Lee, ...
Applied Physics Letters 96 (20), 201907, 2010
372010
Effect of oxygen partial pressure on the Fermi level of films fabricated by pulsed laser deposition
CH Min, S Cho, SH Lee, DY Cho, WG Park, JG Chung, E Lee, JC Lee, ...
Applied Physics Letters 96 (20), 201907, 2010
372010
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