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Todd L Williamson
Todd L Williamson
Verified email at nist.gov
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Porous GaN as a template to produce surface-enhanced Raman scattering-active surfaces
TL Williamson, X Guo, A Zukoski, A Sood, DJ Díaz, PW Bohn
The Journal of Physical Chemistry B 109 (43), 20186-20191, 2005
942005
Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire
DJ Dı́az, TL Williamson, I Adesida, PW Bohn, RJ Molnar
Journal of applied physics 94 (12), 7526-7534, 2003
762003
Characterization of the thin-film NbN superconductor for single-photon detection by transport measurements
SZ Lin, O Ayala-Valenzuela, RD McDonald, LN Bulaevskii, TG Holesinger, ...
Physical Review B 87 (18), 184507, 2013
642013
Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching
DJ Dıaz, TL Williamson, I Adesida, PW Bohn, RJ Molnar
Journal of Vacuum Science & Technology B 20 (6), 2375-2383, 2002
622002
Structure–property relationships in porous GaN generated by Pt-assisted electroless etching studied by Raman spectroscopy
TL Williamson, DJ Dıaz, PW Bohn, RJ Molnar
Journal of Vacuum Science & Technology B 22 (3), 925-931, 2004
522004
Development and testing of a miniaturized hydrogen safety sensor prototype
PK Sekhar, EL Brosha, R Mukundan, MA Nelson, TL Williamson, ...
Sensors and Actuators B: Chemical 148 (2), 469-477, 2010
502010
Enhanced ultraviolet photoconductivity in porous GaN prepared by metal-assisted electroless etching
XY Guo, TL Williamson, PW Bohn
Solid state communications 140 (3-4), 159-162, 2006
402006
Electroless deposition of gold and platinum for metallization of the intrapore space in porous gallium nitride
DJ Díaz, TL Williamson, X Guo, A Sood, PW Bohn
Thin Solid Films 514 (1-2), 120-126, 2006
312006
Extended hot carrier lifetimes observed in bulk In0. 265±0.02 Ga0. 735N under high-density photoexcitation
Y Zhang, MJY Tayebjee, S Smyth, M Dvořák, X Wen, H Xia, M Heilmann, ...
Applied Physics Letters 108 (13), 131904, 2016
292016
Low‐temperature grown compositionally graded InGaN films
N Miller, RE Jones, KM Yu, JW Ager, Z Liliental‐Weber, EE Haller, ...
physica status solidi (c) 5 (6), 1866-1869, 2008
252008
In-rich InGaN thin films: Progress on growth, compositional uniformity, and doping for device applications
MA Hoffbauer, TL Williamson, JJ Williams, JL Fordham, KM Yu, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2013
212013
METHOD OF FABRICATION OF MICRO AND NANOFILTERS
CM TANG, O MAKAROVA, M HOFFBAUER, T WILLIAMSON, P AMSTUTZ
WO Patent 2,010,085,337, 2010
212010
Gallium nitride grown by molecular beam epitaxy at low temperatures
AM Jeffries, L Ding, JJ Williams, TL Williamson, MA Hoffbauer, ...
Thin Solid Films 642, 25-30, 2017
202017
Growth of ternary wurtzite BAlN and BGaN by ENABLE‐MBE
TL Williamson, NR Weisse‐Bernstein, MA Hoffbauer
physica status solidi (c) 11 (3‐4), 462-465, 2014
202014
InGaN thin films grown by ENABLE and MBE techniques on silicon substrates
LA Reichertz, KM Yu, Y Cui, ME Hawkridge, JW Beeman, ...
MRS Online Proceedings Library Archive 1068, 2008
152008
Improvements in the compositional uniformity of In‐rich InxGa1‐xN films grown at low temperatures by ENABLE
TL Williamson, AL Salazar, JJ Williams, MA Hoffbauer
physica status solidi (c) 8 (7‐8), 2098-2100, 2011
122011
InGaN/Si heterojunction tandem solar cells
JW Ager, LA Reichertz, KM Yu, WJ Schaff, TL Williamson, MA Hoffbauer, ...
2008 33rd IEEE Photovoltaic Specialists Conference, 1-5, 2008
112008
Characterization of pressure pulse and carrier gas flow changes resulting from pulsed heating in ETV-ICP-MS
J Venable, T Williamson, JA Holcombe
Journal of Analytical Atomic Spectrometry 15 (10), 1329-1334, 2000
102000
Fabrication of high density, high-aspect-ratio polyimide nanofilters
OV Makarova, CM Tang, P Amstutz, R Divan, A Imre, DC Mancini, ...
Journal of Vacuum Science & Technology B 27 (6), 2585-2587, 2009
92009
Highly luminescent InxGa1–xN thin films grown over the entire composition range by energetic neutral atom beam lithography & epitaxy (ENABLE)
TL Williamson, MA Hoffbauer, KM Yu, LA Reichertz, ME Hawkridge, ...
physica status solidi (c) 6 (S2), S409-S412, 2009
92009
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