Follow
Son, Myungwoo
Son, Myungwoo
Korea Photonics Technology Institute
Verified email at kopti.re.kr
Title
Cited by
Cited by
Year
Excellent Selector Characteristics of Nanoscalefor High-Density Bipolar ReRAM Applications
M Son, J Lee, J Park, J Shin, G Choi, S Jung, W Lee, S Kim, S Park, ...
IEEE Electron Device Letters 32 (11), 1579-1581, 2011
3322011
Sub‐10 nm Graphene Nanoribbon Array Field‐Effect Transistors Fabricated by Block Copolymer Lithography
JG Son, M Son, KJ Moon, BH Lee, JM Myoung, MS Strano, MH Ham, ...
Advanced Materials 25 (34), 4723-4728, 2013
2022013
Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure
J Jang, M Son, S Chung, K Kim, C Cho, BH Lee, MH Ham
Scientific Reports 5 (1), 17955, 2015
1502015
Mechanical and electrical properties of NbMoTaW refractory high-entropy alloy thin films
H Kim, S Nam, A Roh, M Son, MH Ham, JH Kim, H Choi
International Journal of Refractory Metals and Hard Materials 80, 286-291, 2019
1202019
Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications
X Liu, SM Sadaf, M Son, J Shin, J Park, J Lee, S Park, H Hwang
Nanotechnology 22 (47), 475702, 2011
1172011
Co-Occurrence of Threshold Switching and Memory Switching in Cells for Crosspoint Memory Applications
X Liu, SM Sadaf, M Son, J Park, J Shin, W Lee, K Seo, D Lee, H Hwang
IEEE Electron Device Letters 33 (2), 236-238, 2011
922011
Sulfur vacancy-induced reversible doping of transition metal disulfides via hydrazine treatment
SS Chee, C Oh, M Son, GC Son, H Jang, TJ Yoo, S Lee, W Lee, ...
Nanoscale 9 (27), 9333-9339, 2017
742017
Self-Selective Characteristics of Nanoscale Devices for High-Density ReRAM Applications
M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ...
IEEE electron device letters 33 (5), 718-720, 2012
662012
Low-temperature synthesis of graphene by chemical vapor deposition and its applications
M Son, MH Ham
FlatChem 5, 40-49, 2017
642017
Isoindigo-based donor–acceptor conjugated polymers for air-stable nonvolatile memory devices
W Elsawy, M Son, J Jang, MJ Kim, Y Ji, TW Kim, HC Ko, A Elbarbary, ...
ACS macro letters 4 (3), 322-326, 2015
472015
High-quality nitrogen-doped graphene films synthesized from pyridine via two-step chemical vapor deposition
M Son, SS Chee, SY Kim, W Lee, YH Kim, BY Oh, JY Hwang, BH Lee, ...
Carbon 159, 579-585, 2020
462020
Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices
SM Sadaf, X Liu, M Son, S Park, SH Choudhury, E Cha, M Siddik, J Shin, ...
physica status solidi (a) 209 (6), 1179-1183, 2012
432012
Quantized conductive filament formed by limited Cu source in sub-5nm era
J Park, W Lee, M Choe, S Jung, M Son, S Kim, S Park, J Shin, D Lee, ...
2011 International Electron Devices Meeting, 3.7. 1-3.7. 4, 2011
432011
Charge transfer in graphene/polymer interfaces for CO2 detection
M Son, Y Pak, SS Chee, FM Auxilia, K Kim, BK Lee, S Lee, SK Kang, ...
Nano Research 11, 3529-3536, 2018
402018
Excellent state stability of Cu/SiC/Pt programmable metallization cells for nonvolatile memory applications
W Lee, J Park, M Son, J Lee, S Jung, S Kim, S Park, J Shin, H Hwang
IEEE electron device letters 32 (5), 680-682, 2011
352011
Effects of Li doping on the structural and electrical properties of solution-processed ZnO films for high-performance thin-film transistors
K Bang, GC Son, M Son, JH Jun, H An, KH Baik, JM Myoung, MH Ham
Journal of Alloys and Compounds 739, 41-46, 2018
302018
Threshold voltage modulation of a graphene–ZnO barristor using a polymer doping process
SY Kim, J Hwang, YJ Kim, HJ Hwang, M Son, N Revannath, MH Ham, ...
Advanced Electronic Materials 5 (7), 1800805, 2019
212019
Improvement of resistive switching uniformity by introducing a thin NbOx interface layer
X Liu, SM Sadaf, S Kim, KP Biju, X Cao, M Son, SH Choudhury, GY Jung, ...
ECS Solid State Letters 1 (5), Q35, 2012
202012
Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes
JH Min, M Son, SY Bae, JY Lee, J Yun, MJ Maeng, DG Kwon, Y Park, ...
Optics express 22 (104), A1040-A1050, 2014
192014
MIM-type cell selector for high-density and low-power cross-point memory application
J Shin, G Choi, J Woo, J Park, S Park, W Lee, S Kim, M Son, H Hwang
Microelectronic engineering 93, 81-84, 2012
182012
The system can't perform the operation now. Try again later.
Articles 1–20