Jae-Hyun Lee
Jae-Hyun Lee
Department of Materials Science and Engineering, Ajou University
Verified email at ajou.ac.kr - Homepage
Cited by
Cited by
Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium
JH Lee, EK Lee, WJ Joo, Y Jang, BS Kim, JY Lim, SH Choi, SJ Ahn, ...
Science 344 (6181), 286-289, 2014
Catalyst-free growth of single-crystal silicon and germanium nanowires
BS Kim, TW Koo, JH Lee, DS Kim, YC Jung, SW Hwang, BL Choi, EK Lee, ...
Nano letters 9 (2), 864-869, 2009
Epitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor
HC Shin, Y Jang, TH Kim, JH Lee, DH Oh, SJ Ahn, JH Lee, Y Moon, ...
Journal of the American Chemical Society 137 (21), 6897-6905, 2015
Seed-free electrochemical growth of ZnO nanotube arrays on single-layer graphene
C Xu, BS Kim, JH Lee, M Kim, SW Hwang, BL Choi, EK Lee, JM Kim, ...
Materials Letters 72, 25-28, 2012
Pt-polyaniline nanocomposite on boron-doped diamond electrode for amperometic biosensor with low detection limit
MJ Song, JH Kim, SK Lee, JH Lee, DS Lim, SW Hwang, D Whang
Microchimica Acta 171 (3-4), 249-255, 2010
Electrochemical growth of vertically aligned ZnO nanorod arrays on oxidized bi-layer graphene electrode
DW Chunju Xu, Jae-Hyun Lee, Jong-Cheol Lee, Byung-Sung Kim, Sung Woo Hwang
CrystEngComm 13 (20), 6036-6039, 2011
Realization of continuous Zachariasen carbon monolayer
WJ Joo, JH Lee, Y Jang, SG Kang, YN Kwon, J Chung, S Lee, C Kim, ...
Science advances 3 (2), e1601821, 2017
Low-temperature wafer-scale growth of MoS2-graphene heterostructures
HU Kim, M Kim, Y Jin, Y Hyeon, KS Kim, BS An, CW Yang, V Kanade, ...
Applied Surface Science 470, 129-134, 2019
Exfoliation and characterization of V2Se9 atomic crystals
BJ Kim, BJ Jeong, S Oh, S Chae, KH Choi, T Nasir, SH Lee, KW Kim, ...
Nanomaterials 8 (9), 737, 2018
Tunable bandgap of a single layer graphene doped by the manganese oxide using the electrochemical doping
C Soo Park, Y Zhao, JH Lee, D Whang, Y Shon, YH Song, C Jin Lee
Applied Physics Letters 102 (3), 032106, 2013
Low-programmable-voltage nonvolatile memory devices based on omega-shaped gate organic ferroelectric P (VDF-TrFE) field effect transistors using p-type silicon nanowire channels
NH Van, JH Lee, D Whang, DJ Kang
Nano-micro letters 7 (1), 35-41, 2015
Method of manufacturing graphene by using germanium layer
E Lee, B Choi, D Whang, J Lee
US Patent 8,679,976, 2014
Wafer‐Scale and Low‐Temperature Growth of 1T‐WS2 Film for Efficient and Stable Hydrogen Evolution Reaction
HU Kim, V Kanade, M Kim, KS Kim, BS An, H Seok, H Yoo, LE Chaney, ...
Small 16 (6), 1905000, 2020
Unraveling the Factors Affecting the Electrochemical Performance of MoS2–Carbon Composite Catalysts for Hydrogen Evolution Reaction: Surface Defect and …
Y Hyeon, SH Jung, W Jang, M Kim, BS Kim, JH Lee, KR Nandanapalli, ...
ACS applied materials & interfaces 11 (5), 5037-5045, 2019
Catalytic etching of monolayer graphene at low temperature via carbon oxidation
JE Jin, JH Lee, JH Choi, HK Jang, J Na, D Whang, DH Kim, GT Kim
Physical Chemistry Chemical Physics 18 (1), 101-109, 2016
A facile route to Si nanowire gate-all-around field effect transistors with a steep subthreshold slope
JH Lee, BS Kim, SH Choi, Y Jang, SW Hwang, D Whang
Nanoscale 5 (19), 8968-8972, 2013
Fabrication of vertically aligned Si nanowires on Si (100) substrates utilizing metal-assisted etching
J Hong, K Kim, N Kwon, J Lee, D Whang, I Chung
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (4 …, 2010
Selectivity of Threefold Symmetry in Epitaxial Alignment of Liquid Crystal Molecules on Macroscale Single‐Crystal Graphene
TZ Shen, SH Hong, JH Lee, SG Kang, B Lee, D Whang, JK Song
Advanced Materials 30 (40), 1802441, 2018
CMOS-compatible catalytic growth of graphene on a silicon dioxide substrate
JH Lee, MS Kim, JY Lim, SH Jung, SG Kang, HJ Shin, JY Choi, ...
Applied Physics Letters 109 (5), 053102, 2016
Ultralow-power non-volatile memory cells based on P (VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors
NH Van, JH Lee, D Whang, DJ Kang
Nanoscale 7 (27), 11660-11666, 2015
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