| Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material HY Ryu, DS Shin, JI Shim Applied Physics Letters 100 (13), 131109, 2012 | 128 | 2012 |
| Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence DS Shin, DP Han, JY Oh, JI Shim Applied Physics Letters 100 (15), 153506, 2012 | 122 | 2012 |
| Efficiency droop in AlGaInP and GaInN light-emitting diodes JI Shim, DP Han, H Kim, DS Shin, GB Lin, DS Meyaard, Q Shan, J Cho, ... Applied Physics Letters 100 (11), 111106, 2012 | 87 | 2012 |
| An explanation of efficiency droop in InGaN-based light emitting diodes: saturated radiative recombination rate at randomly distributed In-rich active areas JI Shim, HS Kim, DS Shin, HY Yoo Journal of the Korean Physical Society 58 (3), 503-508, 2011 | 78 | 2011 |
| Measuring the internal quantum efficiency of light-emitting diodes: towards accurate and reliable room-temperature characterization JI Shim, DS Shin Nanophotonics 7 (10), 1601-1615, 2018 | 76 | 2018 |
| The frequency behavior of the third-order intercept point in a waveguide photodiode H Jiang, DS Shin, GL Li, TA Vang, DC Scott, PKL Yu IEEE Photonics Technology Letters 12 (5), 540-542, 2000 | 69 | 2000 |
| Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements DP Han, DG Zheng, CH Oh, H Kim, JI Shim, DS Shin, KS Kim Applied Physics Letters 104 (15), 151108, 2014 | 67 | 2014 |
| Conduction mechanisms of leakage currents in InGaN/GaN-based light-emitting diodes DP Han, CH Oh, DG Zheng, H Kim, JI Shim, KS Kim, DS Shin IEEE Transactions on Electron Devices 62 (2), 587-592, 2015 | 56 | 2015 |
| Measurement of internal electric field in GaN-based light-emitting diodes SI Park, JI Lee, DH Jang, HS Kim, DS Shin, HY Ryu, JI Shim IEEE Journal of Quantum Electronics 48 (4), 500-506, 2012 | 51 | 2012 |
| Optoelectronic RF signal mixing using an electroabsorption waveguide as an integrated photodetector/mixer DS Shin, GL Li, CK Sun, SA Pappert, KK Loi, WSC Chang, PKL Yu IEEE Photonics Technology Letters 12 (2), 193-195, 2000 | 50 | 2000 |
| Analysis of time-resolved photoluminescence of InGaN quantum wells using the carrier rate equation H Kim, DS Shin, HY Ryu, JI Shim Japanese Journal of Applied Physics 49 (11R), 112402, 2010 | 47 | 2010 |
| On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes GW Lee, JI Shim, DS Shin Applied Physics Letters 109 (3), 031104, 2016 | 42 | 2016 |
| Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes DP Han, CH Oh, DG Zheng, H Kim, JI Shim, KS Kim, DS Shin Japanese Journal of Applied Physics 54 (2S), 02BA01, 2015 | 42 | 2015 |
| Current- and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodes CH Oh, JI Shim, DS Shin Japanese Journal of Applied Physics 58 (SC), SCCC08, 2019 | 41 | 2019 |
| High-power electroabsorption modulator using intra-step-barrier quantum wells DS Shin, PKL Yu, SA Pappert Journal of Applied Physics 89 (2), 1515-1517, 2001 | 40 | 2001 |
| Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes DP Han, H Kim, JI Shim, DS Shin, KS Kim Applied Physics Letters 105 (19), 191114, 2014 | 34 | 2014 |
| Measurement of IP3 in pin photodetectors and proposed performance requirements for RF fiber-optic links DC Scott, TA Vang, J Elliott, D Forbes, J Lacey, K Everett, F Alvarez, ... IEEE Photonics Technology Letters 12 (4), 422-424, 2000 | 34 | 2000 |
| Measurement of piezoelectric field in single- and double-quantum-well green LEDs using electroreflectance spectroscopy M Usman, H Kim, JI Shim, DS Shin Japanese Journal of Applied Physics 53 (9), 098002, 2014 | 32 | 2014 |
| Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes DP Han, JI Shim, DS Shin, KS Kim Applied Physics Express 9 (8), 081002, 2016 | 31 | 2016 |
| Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement DP Han, JI Shim, DS Shin Applied Physics Express 10 (5), 052101, 2017 | 27 | 2017 |
Jong-In ShimDept. of Electronics and Communication Eng., Hanyang University ERICA Campushanyang.ac.kr의 이메일 확인됨
