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Hyun-Sik Choi
Hyun-Sik Choi
조선대학교 전자공학과 교수
Verified email at chosun.ac.kr
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Cited by
Cited by
Year
Impact of channel hot electrons on current collapse in AlGaN/GaN HEMTs
I Hwang, J Kim, S Chong, HS Choi, SK Hwang, J Oh, JK Shin, UI Chung
IEEE electron device letters 34 (12), 1494-1496, 2013
1092013
Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays
MJ Lee, D Lee, H Kim, HS Choi, JB Park, HG Kim, YK Cha, UI Chung, ...
2012 International Electron Devices Meeting, 2.6. 1-2.6. 3, 2012
902012
Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With and Gate Dielectrics by Low-Frequency Noise Measurements
HS Choi, S Jeon, H Kim, J Shin, C Kim, UI Chung
IEEE electron device letters 32 (8), 1083-1085, 2011
562011
An adaptive predistortion RF power amplifier with a spectrum monitor for multicarrier WCDMA applications
SY Lee, YS Lee, SH Hong, HS Choi, YH Jeong
IEEE transactions on microwave theory and techniques 53 (2), 786-793, 2005
512005
The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility
HS Choi, S Jeon, H Kim, J Shin, C Kim, UI Chung
Applied Physics Letters 100 (17), 2012
422012
Influence of Hf contents on interface state properties in a-HfInZnO thin-film transistors with SiNx/SiOx gate dielectrics
HS Choi, S Jeon, H Kim, J Shin, C Kim, UI Chung
Applied Physics Letters 99 (18), 2011
352011
Power management chips and power management devices including the same
HJ Kim, JK Shin, UI Chung, H Choi
US Patent 9,525,410, 2016
342016
High threshold voltage p-GaN gate power devices on 200 mm Si
J Kim, SK Hwang, I Hwang, H Choi, S Chong, HS Choi, W Jeon, HS Choi, ...
2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013
322013
Characterization and Modeling of 1/Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides
RH Baek, CK Baek, HS Choi, JS Lee, YY Yeoh, KH Yeo, DW Kim, K Kim, ...
IEEE transactions on nanotechnology 10 (3), 417-423, 2010
282010
Three-dimensional integration approach to high-density memory devices
H Kim, S Jeon, MJ Lee, J Park, S Kang, HS Choi, C Park, HS Hwang, ...
IEEE transactions on electron devices 58 (11), 3820-3828, 2011
262011
Independently controllable 3/sup rd/-and 5/sup th/-order analog predistortion linearizer for RF power amplifier in GSM
SY Lee, YS Lee, SH Hong, HS Choi, YH Jeong
Proceedings of 2004 IEEE Asia-Pacific Conference on Advanced System …, 2004
252004
High performance bilayer oxide transistor for gate driver circuitry implemented on power electronic devices
S Jeon, H Kim, H Choi, I Song, SE Ahn, CJ Kim, J Shin, UI Chung, I Yoo, ...
2012 Symposium on VLSI Technology (VLSIT), 125-126, 2012
232012
Field-induced macroscopic barrier model for persistent photoconductivity in nanocrystalline oxide thin-film transistors
HS Choi, S Jeon
Applied Physics Letters 104 (13), 2014
202014
Anomalous high photoconductivity in short channel indium-zinc-oxide photo-transistors
HS Choi, S Jeon
Applied Physics Letters 106 (1), 2015
172015
Semiconductor device and method of sensing data of the semiconductor device
HJ Kim, JK Shin, H Choi, H Jeong
US Patent 8,503,220, 2013
172013
Dual gate photo-thin film transistor with high photoconductive gain for high reliability, and low noise flat panel transparent imager
S Jeon, SE Ahn, I Song, Y Jeon, Y Kim, S Kim, H Choi, H Kim, E Lee, ...
2011 International Electron Devices Meeting, 14.3. 1-14.3. 4, 2011
172011
Resistor devices and digital-to-analog converters using the same
H Choi, HJ Kim, H Jeong
US Patent 8,477,055, 2013
152013
Thickness dependent low-frequency noise characteristics of a-InZnO thin-film transistors under light illumination
HS Choi, S Jeon
Applied Physics Letters 104 (2), 2014
142014
The impact of La-doping on the reliability of low Vth high-k/metal gate nMOSFETs under various gate stress conditions
CY Kang, CD Young, J Huang, P Kirsch, D Heh, P Sivasubramani, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
132008
Mobility Degradation Effect to Hooge's Constant in Recessed-Gate MIS Power Transistors
HS Choi
IEEE Electron Device Letters 35 (6), 624-626, 2014
122014
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