| Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ... ACS nano 6 (3), 2722-2730, 2012 | 147 | 2012 |
| Rapid selective etching of PMMA residues from transferred graphene by carbon dioxide C Gong, HC Floresca, D Hinojos, S McDonnell, X Qin, Y Hao, ... The Journal of Physical Chemistry C 117 (44), 23000-23008, 2013 | 115 | 2013 |
| Partially fluorinated graphene: structural and electrical characterization L Cheng, S Jandhyala, G Mordi, AT Lucero, J Huang, A Azcatl, R Addou, ... ACS Applied Materials & Interfaces 8 (7), 5002-5008, 2016 | 81 | 2016 |
| Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate S Lee, OD Iyore, S Park, YG Lee, S Jandhyala, CG Kang, G Mordi, Y Kim, ... Carbon 68, 791-797, 2014 | 26 | 2014 |
| Graphene-ferroelectric hybrid devices for multi-valued memory system S Jandhyala, G Mordi, D Mao, MW Ha, MA Quevedo-Lopez, BE Gnade, ... Applied Physics Letters 103 (2), 022903, 2013 | 20 | 2013 |
| Low-κ organic layer as a top gate dielectric for graphene field effect transistors G Mordi, S Jandhyala, C Floresca, S McDonnell, MJ Kim, RM Wallace, ... Applied Physics Letters 100 (19), 193117, 2012 | 19 | 2012 |
| Atomic layer deposition of dielectrics for carbon-based electronics J Kim, S Jandhyala Thin Solid Films 546, 85-93, 2013 | 18 | 2013 |
| Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect … DR Gajula, DW McNeill, BE Coss, H Dong, S Jandhyala, J Kim, ... Applied Physics Letters 100 (19), 192101, 2012 | 18 | 2012 |
| ACS Nano 6, 2722 (2012) S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ... | 11 | |
| In situ electrical studies of ozone based atomic layer deposition on graphene S Jandhyala, G Mordi, B Lee, J Kim ECS Transactions 45 (4), 39, 2012 | 9 | 2012 |
| Triangular-pulse measurement for hysteresis of high-performance and flexible graphene field-effect transistors S Park, S Lee, G Mordi, S Jandhyala, MW Ha, JS Lee, L Colombo, ... IEEE Electron Device Letters 35 (2), 277-279, 2014 | 5 | 2014 |
| Atomic layer deposited Al2O3 dielectrics using ozone functionalization of graphene S Jandhyala, G Mordi, B Lee, J Kim 2011 IEEE Nanotechnology Materials and Devices Conference, 94-97, 2011 | 2 | 2011 |
| Non-covalent and covalent functionalization of graphene for device applications S Jandhyala The University of Texas at Dallas, 2013 | 1 | 2013 |
| In Situ Electrical Studies of Ozone Based Atomic Layer Deposition on Graphene J Kim, S Jandhyala, G Mordi, B Lee ECS Meeting Abstracts, 758, 2012 | | 2012 |
| Implementation of Parylene as a Low- Kappa Gate Dielectric Material for Graphene Field Effect Transistors(GFETs) G Mordi, S Jandhyala, J Kim AIP Conference Proceedings, 2012 | | 2012 |
| Scaling Down High- Kappa Gate Dielectrics for Graphene-Based Device Applications S Jandhyala, G Mordi, J Kim AIP Conference Proceedings, 2012 | | 2012 |
| In-Situ Electrical Studies on Ozone Functionalization of Graphene S Jandhyala, G Mordi, J Kim AIP Conference Proceedings, 2012 | | 2012 |
| Surface characterization of nickel germanides for Schottky source/drain contacts to germanium p-MOSFETs DR Gajula, DW McNeill, BE Coss, H Dong, S Jandhyala, J Kim, ... 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011 | | 2011 |
| Integration of Surface Treatment Techniques for Uniform and Conformal ALD High-k Dielectric on Graphene G Mordi, S Jandhyala, B Lee, J Kim Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011 | | 2011 |
| A Detailed Study of Ozone Process on Graphene for Ozone-Based Atomic Layer Deposition B Lee, G Lee, G Mordi, S Jandhyala, R Wallace, J Kim Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011 | | 2011 |
Jiyoung KimProfessor of Materials Science and Engineering, University of Texas at DallasVerified email at utdallas.edu
