Srikar Jandhyala
Srikar Jandhyala
Process Engineer, Intel Corporation
Verified email at intel.com
Title
Cited by
Cited by
Year
Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone
S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ...
ACS nano 6 (3), 2722-2730, 2012
1332012
Rapid selective etching of PMMA residues from transferred graphene by carbon dioxide
C Gong, HC Floresca, D Hinojos, S McDonnell, X Qin, Y Hao, ...
The Journal of Physical Chemistry C 117 (44), 23000-23008, 2013
1042013
Partially fluorinated graphene: structural and electrical characterization
L Cheng, S Jandhyala, G Mordi, AT Lucero, J Huang, A Azcatl, R Addou, ...
ACS applied materials & interfaces 8 (7), 5002-5008, 2016
592016
Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate
S Lee, OD Iyore, S Park, YG Lee, S Jandhyala, CG Kang, G Mordi, Y Kim, ...
Carbon 68, 791-797, 2014
262014
Low-κ organic layer as a top gate dielectric for graphene field effect transistors
G Mordi, S Jandhyala, C Floresca, S McDonnell, MJ Kim, RM Wallace, ...
Applied Physics Letters 100 (19), 193117, 2012
192012
Graphene-ferroelectric hybrid devices for multi-valued memory system
S Jandhyala, G Mordi, D Mao, MW Ha, MA Quevedo-Lopez, BE Gnade, ...
Applied Physics Letters 103 (2), 022903, 2013
182013
Atomic layer deposition of dielectrics for carbon-based electronics
J Kim, S Jandhyala
Thin Solid Films 546, 85-93, 2013
172013
Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect …
DR Gajula, DW McNeill, BE Coss, H Dong, S Jandhyala, J Kim, ...
Applied Physics Letters 100 (19), 192101, 2012
172012
ACS Nano 6, 2722 (2012)
S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ...
11
In situ electrical studies of ozone based atomic layer deposition on graphene
S Jandhyala, G Mordi, B Lee, J Kim
ECS Transactions 45 (4), 39, 2012
72012
Triangular-pulse measurement for hysteresis of high-performance and flexible graphene field-effect transistors
S Park, S Lee, G Mordi, S Jandhyala, MW Ha, JS Lee, L Colombo, ...
IEEE Electron Device Letters 35 (2), 277-279, 2014
52014
Atomic layer deposited Al2O3 dielectrics using ozone functionalization of graphene
S Jandhyala, G Mordi, B Lee, J Kim
2011 IEEE Nanotechnology Materials and Devices Conference, 94-97, 2011
22011
Non-covalent and covalent functionalization of graphene for device applications
S Jandhyala
The University of Texas at Dallas, 2013
12013
In Situ Electrical Studies of Ozone Based Atomic Layer Deposition on Graphene
J Kim, S Jandhyala, G Mordi, B Lee
ECS Meeting Abstracts, 758, 2012
2012
Implementation of Parylene as a Low- Kappa Gate Dielectric Material for Graphene Field Effect Transistors(GFETs)
G Mordi, S Jandhyala, J Kim
AIP Conference Proceedings, 2012
2012
Scaling Down High- Kappa Gate Dielectrics for Graphene-Based Device Applications
S Jandhyala, G Mordi, J Kim
AIP Conference Proceedings, 2012
2012
In-Situ Electrical Studies on Ozone Functionalization of Graphene
S Jandhyala, G Mordi, J Kim
AIP Conference Proceedings, 2012
2012
Surface characterization of nickel germanides for Schottky source/drain contacts to germanium p-MOSFETs
DR Gajula, DW McNeill, BE Coss, H Dong, S Jandhyala, J Kim, ...
2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011
2011
Integration of Surface Treatment Techniques for Uniform and Conformal ALD High-k Dielectric on Graphene
G Mordi, S Jandhyala, B Lee, J Kim
Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011
2011
A Detailed Study of Ozone Process on Graphene for Ozone-Based Atomic Layer Deposition
B Lee, G Lee, G Mordi, S Jandhyala, R Wallace, J Kim
Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011
2011
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