| Co-designing electronics with microfluidics for more sustainable cooling R Van Erp, R Soleimanzadeh, L Nela, G Kampitsis, E Matioli Nature 585 (7824), 211-216, 2020 | 711 | 2020 |
| GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ... Journal of Applied Physics 130 (18), 2021 | 428 | 2021 |
| High-brightness polarized light-emitting diodes E Matioli, S Brinkley, KM Kelchner, YL Hu, S Nakamura, S DenBaars, ... Light: Science & Applications 1 (8), e22-e22, 2012 | 322 | 2012 |
| High internal and external quantum efficiency InGaN/GaN solar cells E Matioli, C Neufeld, M Iza, SC Cruz, AA Al-Heji, X Chen, RM Farrell, ... Applied Physics Letters 98 (2), 2011 | 273 | 2011 |
| Tri-gate normally-off GaN power MISFET B Lu, E Matioli, T Palacios IEEE Electron Device Letters 33 (3), 360-362, 2012 | 265 | 2012 |
| Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes K McGroddy, A David, E Matioli, M Iza, S Nakamura, S DenBaars, ... Applied physics letters 93 (10), 2008 | 247 | 2008 |
| Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs E Matioli, C Weisbuch Journal of Physics D: Applied Physics 43 (35), 354005, 2010 | 144 | 2010 |
| High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals E Matioli, E Rangel, M Iza, B Fleury, N Pfaff, J Speck, E Hu, C Weisbuch Applied physics letters 96 (3), 2010 | 125 | 2010 |
| Fully vertical GaN-on-Si power MOSFETs RA Khadar, C Liu, R Soleimanzadeh, E Matioli IEEE Electron Device Letters 40 (3), 443-446, 2019 | 106 | 2019 |
| GaN-on-Si quasi-vertical power MOSFETs C Liu, RA Khadar, E Matioli IEEE Electron Device Letters 39 (1), 71-74, 2017 | 105 | 2017 |
| Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal TA Truong, LM Campos, E Matioli, I Meinel, CJ Hawker, C Weisbuch, ... Applied Physics Letters 94 (2), 2009 | 105 | 2009 |
| Nanoplasma-enabled picosecond switches for ultrafast electronics M Samizadeh Nikoo, A Jafari, N Perera, M Zhu, G Santoruvo, E Matioli Nature 579 (7800), 534-539, 2020 | 97 | 2020 |
| Comparison of wide-band-gap technologies for soft-switching losses at high frequencies A Jafari, MS Nikoo, N Perera, HK Yildirim, F Karakaya, R Soleimanzadeh, ... IEEE Transactions on Power Electronics 35 (12), 12595-12600, 2020 | 88 | 2020 |
| High performance tri-gate GaN power MOSHEMTs on silicon substrate J Ma, E Matioli IEEE Electron Device Letters 38 (3), 367-370, 2017 | 87 | 2017 |
| High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy JR Lang, CJ Neufeld, CA Hurni, SC Cruz, E Matioli, UK Mishra, JS Speck Applied Physics Letters 98 (13), 2011 | 87 | 2011 |
| 820-V GaN-on-Si quasi-vertical pin diodes with BFOM of 2.0 GW/cm2 RA Khadar, C Liu, L Zhang, P Xiang, K Cheng, E Matioli IEEE Electron Device Letters 39 (3), 401-404, 2018 | 85 | 2018 |
| Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes E Rangel, E Matioli, YS Choi, C Weisbuch, JS Speck, EL Hu Applied physics letters 98 (8), 2011 | 80 | 2011 |
| Fully soft-switched high step-up nonisolated three-port DC–DC converter using GaN HEMTs R Faraji, H Farzanehfard, G Kampitsis, M Mattavelli, E Matioli, M Esteki IEEE Transactions on Industrial Electronics 67 (10), 8371-8380, 2019 | 79 | 2019 |
| Performance of GaN power devices for cryogenic applications down to 4.2 K L Nela, N Perera, C Erine, E Matioli IEEE Transactions on Power Electronics 36 (7), 7412-7416, 2020 | 76 | 2020 |
| Slanted tri-gates for high-voltage GaN power devices J Ma, E Matioli IEEE Electron Device Letters 38 (9), 1305-1308, 2017 | 75 | 2017 |
Luca NelaÉcole polytechnique fédérale de Lausanneepfl.ch의 이메일 확인됨
