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Woojin Ahn
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High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators
O Seok, W Ahn, MK Han, MW Ha
Semiconductor science and technology 28 (2), 025001, 2012
492012
[Invited] Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20nm modern …
W Ahn, SH Shin, C Jiang, H Jiang, MA Wahab, MA Alam
Microelectronics Reliability 81, 262-273, 2018
272018
A Predictive Model for IC Self-Heating Based on Effective Medium and Image Charge Theories and Its Implications for Interconnect and Transistor Reliability
W Ahn, H Zhang, T Shen, C Christiansen, P Justison, S Shin, MA Alam
IEEE Transactions on Electron Devices, 2017
272017
A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical review
MA Alam, BK Mahajan, YP Chen, W Ahn, H Jiang, SH Shin
IEEE Transactions on Electron Devices 66 (11), 4556-4565, 2019
262019
A New Framework of Physics-Based Compact Model Predicts Reliability of Self-Heated Modern ICs: FinFET, NWFET, NSHFET Comparison
W Ahn, C Jiang, J Xu, MA Alam
Electron Devices Meeting (IEDM), 2017, 2017
262017
A novel synthesis of Rent's rule and effective-media theory predicts FEOL and BEOL reliability of self-heated ICs
W Ahn, H Jiang, SH Shin, MA Alam
2016 IEEE International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2016
202016
High‐breakdown voltage and low on‐resistance AlGaN/GaN on Si MOS‐HEMTs employing an extended TaN gate on HfO2 gate insulator
O Seok, W Ahn, MK Han, MW Ha
Electronics letters 49 (6), 425-427, 2013
192013
Performance potential of Ge CMOS technology from a material-device-circuit perspective
SH Shin, H Jiang, W Ahn, H Wu, W Chung, DY Peide, MA Alam
IEEE Transactions on Electron Devices 65 (5), 1679-1684, 2018
162018
Effect of Ga2O3 sputtering power on breakdown voltage of AlGaN/GaN high-electron-mobility transistors
O Seok, W Ahn, MK Han, MW Ha
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013
122013
Fundamental trade-off between short-channel control and hot carrier degradation in an extremely-thin silicon-on-insulator (ETSOI) technology
SH Shin, MA Wahab, W Ahn, A Ziabari, K Maize, A Shakouri, MA Alam
2015 IEEE International Electron Devices Meeting (IEDM), 20.3. 1-20.3. 4, 2015
112015
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs
I Imperiale, S Reggiani, G Pavarese, E Gnani, A Gnudi, G Baccarani, ...
IEEE Transactions on Electron Devices 64 (3), 1209-1216, 2017
102017
Effects of Filler Configuration and Moisture on Dissipation Factor and Critical Electric Field of Epoxy Composites for HV-ICs Encapsulation
W Ahn, D Cornigli, D Varghese, L Nguyen, S Krishnan, S Reggiani, ...
IEEE Transactions on Components, Packaging and Manufacturing Technology 10 …, 2020
82020
High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealing
W Ahn, O Seok, SM Song, MK Han, MW Ha
Journal of crystal growth 378, 600-603, 2013
72013
Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and rf-sputtered HfO2 gate insulator
W Ahn, O Seok, MW Ha, YS Kim, MK Han
2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013
72013
Design and Optimization of -Ga2O3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective
BK Mahajan, YP Chen, W Ahn, N Zagni, MA Alam
2018 IEEE International Electron Devices Meeting (IEDM), 24.6. 1-24.6. 4, 2018
62018
Optimum filler geometry for suppression of moisture diffusion in molding compounds
W Ahn, SH Shin, R Asadpour, D Varghese, L Nguyen, S Krishnan, ...
2016 IEEE International Reliability Physics Symposium (IRPS), PA-1-1-PA-1-4, 2016
62016
Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)
W Ahn, O Seok, MW Ha, YS Kim, MK Han
ECS Transactions 53 (2), 171, 2013
62013
Thermoreflectance imaging of electromigration evolution in asymmetric aluminum constrictions
H Tian, W Ahn, K Maize, M Si, P Ye, MA Alam, A Shakouri, P Bermel
Journal of Applied Physics 123 (3), 035107, 2018
32018
3.2 kV AlGaN/GaN MIS-HEMTs employing RF sputtered Ga2O3films
O Seok, W Ahn, YS Kim, MK Han, MW Ha
2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012
32012
Space Charge Redistribution in Epoxy Mold Compounds of High-Voltage ICs at Dry and Wet Conditions: Theory and Experiment
W Ahn, MA Alam, D Cornigli, S Reggiani, D Varghese, S Krishnan
IEEE Transactions on Dielectrics and Electrical Insulation 28 (6), 2043-2051, 2021
22021
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