| Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors SK Kim, GJ Choi, SY Lee, M Seo, SW Lee, JH Han, HS Ahn, S Han, ... Advanced Materials 20 (8), 1429-1435, 2008 | 342 | 2008 |
| Atomic layer deposition of Ru thin films using 2, 4-(dimethylpentadienyl)(ethylcyclopentadienyl) Ru by a liquid injection system SK Kim, SY Lee, SW Lee, GW Hwang, CS Hwang, JW Lee, J Jeong Journal of The Electrochemical Society 154 (2), D95, 2007 | 120 | 2007 |
| Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition DY Cho, HS Jung, IH Yu, JH Yoon, HK Kim, SY Lee, SH Jeon, S Han, ... Chemistry of Materials 24 (18), 3534-3543, 2012 | 100 | 2012 |
| Reduction of Electrical Defects in Atomic Layer Deposited HfO2 Films by Al Doping TJ Park, JH Kim, JH Jang, CK Lee, KD Na, SY Lee, HS Jung, M Kim, ... Chemistry of Materials 22 (14), 4175-4184, 2010 | 78 | 2010 |
| Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor JH Han, SW Lee, GJ Choi, SY Lee, CS Hwang, C Dussarrat, J Gatineau Chemistry of Materials 21 (2), 207-209, 2009 | 77 | 2009 |
| Effects of O 3 and H 2 O as oxygen sources on the atomic layer deposition of HfO 2 gate dielectrics at different deposition temperatures SY Lee, HK Kim, JH Lee, IH Yu, JH Lee, CS Hwang Journal of Materials Chemistry C 2 (14), 2558-2568, 2014 | 56 | 2014 |
| Impact of O3 feeding time on TiO2 films grown by atomic layer deposition for memory capacitor applications SK Kim, SY Lee, M Seo, GJ Choi, CS Hwang Journal of Applied Physics 102 (2), 2007 | 56 | 2007 |
| Atomic layer deposition of TiO2 films on Ru buffered TiN electrode for capacitor applications GJ Choi, SK Kim, SY Lee, WY Park, M Seo, BJ Choi, CS Hwang Journal of The Electrochemical Society 156 (7), G71, 2009 | 49 | 2009 |
| Impacts of Zr Composition inGate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics HS Jung, SA Lee, S Rha, SY Lee, HK Kim, KH Oh, JM Park, WH Kim, ... IEEE transactions on electron devices 58 (7), 2094-2103, 2011 | 44 | 2011 |
| Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy JH Jang, HS Jung, JH Kim, SY Lee, CS Hwang, M Kim Journal of Applied Physics 109 (2), 2011 | 37 | 2011 |
| Improved growth and electrical properties of atomic-layer-deposited metal-oxide film by discrete feeding method of metal precursor TJ Park, JH Kim, JH Jang, UK Kim, SY Lee, J Lee, HS Jung, CS Hwang Chemistry of Materials 23 (7), 1654-1658, 2011 | 36 | 2011 |
| Chemical structures and electrical properties of atomic layer deposited HfO2 thin films grown at an extremely low temperature (≤ 100° C) using O3 as an oxygen source JH Kim, TJ Park, SK Kim, DY Cho, HS Jung, SY Lee, CS Hwang Applied surface science 292, 852-856, 2014 | 35 | 2014 |
| The role of the methyl and hydroxyl groups of low-k dielectric films on the nucleation of ruthenium by ALD J Heo, SJ Won, D Eom, SY Lee, YB Ahn, CS Hwang, HJ Kim Electrochemical and Solid-State Letters 11 (8), H210, 2008 | 32 | 2008 |
| The effects of postdeposition annealing on the crystallization and electrical characteristics of HfO2 and ZrO2 gate dielectrics HS Jung, JH Jang, DY Cho, SH Jeon, HK Kim, SY Lee, CS Hwang Electrochemical and Solid-State Letters 14 (5), G17, 2011 | 28 | 2011 |
| Enhanced nucleation behavior of atomic-layer-deposited Ru film on low-k dielectrics afforded by UV-O3 treatment J Heo, SY Lee, D Eom, CS Hwang, HJ Kim Electrochemical and Solid-State Letters 11 (2), G5, 2007 | 28 | 2007 |
| Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited HK Kim, SY Lee, IH Yu, TJ Park, R Choi, CS Hwang IEEE electron device letters 33 (7), 955-957, 2012 | 23 | 2012 |
| Phase control of HfO2-based dielectric films for higher-k materials J Ho Lee, IH Yu, S Young Lee, C Seong Hwang Journal of Vacuum Science & Technology B 32 (3), 2014 | 21 | 2014 |
| Electrical and bias temperature instability characteristics of n-type field-effect transistors using HfO x N y gate dielectrics HS Jung, HK Kim, JH Kim, SJ Won, DY Cho, J Lee, SY Lee, CS Hwang, ... Journal of The Electrochemical Society 157 (5), G121, 2010 | 21 | 2010 |
| The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2 Films on Ge Substrate HS Jung, SH Jeon, HK Kim, IH Yu, SY Lee, J Lee, YJ Chung, DY Cho, ... ECS Journal of Solid State Science and Technology 1 (2), N33, 2012 | 19 | 2012 |
| Properties of atomic layer deposited HfO2 films on Ge substrates depending on process temperatures HS Jung, HK Kim, IH Yu, SY Lee, J Lee, J Park, JH Jang, SH Jeon, ... Journal of The Electrochemical Society 159 (4), G33, 2012 | 19 | 2012 |
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National UniversityVerified email at snu.ac.kr
