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SangHo Rha
SangHo Rha
Principal Engineer, Samsung Electronics
Verified email at snu.ac.kr
Title
Cited by
Cited by
Year
Methods of forming wiring structures
J Baek, SH Rha, WK You, S Ahn, N Lee, K Kim, LEE Jeon-Il
US Patent 9,281,277, 2016
3822016
Semiconductor devices including a capping layer and methods of forming semiconductor devices including a capping layer
S Rha, J Baek, W You, S Ahn, N Lee
US Patent 9,368,362, 2016
2022016
Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
T Eom, S Choi, BJ Choi, MH Lee, T Gwon, SH Rha, W Lee, MS Kim, ...
Chemistry of Materials 24 (11), 2099-2110, 2012
612012
Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process
S Ho Rha, J Jung, Y Soo Jung, Y Jang Chung, U Ki Kim, E Suk Hwang, ...
Applied Physics Letters 100 (20), 2012
492012
Methods of forming a thin layer for a semiconductor device and apparatus for performing the same
EK Baek, KT Na, SH Rha
US Patent App. 11/219,972, 2006
482006
Impacts of Zr Composition in Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics
HS Jung, SA Lee, S Rha, SY Lee, HK Kim, KH Oh, JM Park, WH Kim, ...
IEEE transactions on electron devices 58 (7), 2094-2103, 2011
442011
Performance variation according to device structure and the source/drain metal electrode of a-IGZO TFTs
SH Rha, J Jung, Y Jung, YJ Chung, UK Kim, ES Hwang, BK Park, TJ Park, ...
IEEE transactions on electron devices 59 (12), 3357-3363, 2012
412012
Method of manufacturing for semiconductor device using expandable material
S Kim, S Rha, JK Lee, OH Kyungseok, S Kang, S Lee, LEE Jungchan
US Patent 8,906,761, 2014
362014
The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application
M Seo, S Ho Rha, S Keun Kim, J Hwan Han, W Lee, S Han, ...
Journal of Applied Physics 110 (2), 2011
352011
Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films
W Jeon, SH Rha, W Lee, YW Yoo, CH An, KH Jung, SK Kim, CS Hwang
ACS applied materials & interfaces 6 (10), 7910-7917, 2014
292014
Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films
J Lee, DY Cho, J Jung, U Ki Kim, S Ho Rha, C Seong Hwang, JH Choi
Applied Physics Letters 102 (24), 2013
292013
Semiconductor devices including a capping layer
S Rha, J Baek, W You, S Ahn, N Lee
US Patent 9,711,453, 2017
272017
Study on the defects in metal–organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis
UK Kim, SH Rha, JH Kim, YJ Chung, J Jung, ES Hwang, J Lee, TJ Park, ...
Journal of Materials Chemistry C 1 (40), 6695-6702, 2013
272013
The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-
SH Rha, UK Kim, J Jung, HK Kim, YS Jung, ES Hwang, YJ Chung, M Lee, ...
IEEE transactions on electron devices 60 (3), 1128-1135, 2013
262013
Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy
MH Lee, KM Kim, SJ Song, SH Rha, JY Seok, JS Jung, GH Kim, JH Yoon, ...
Applied Physics A 102, 827-834, 2011
242011
Semiconductor device and method of fabricating the same
SH Ahn, S Rha, J Baek, W You, N Lee
US Patent 9,799,606, 2017
232017
Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor
S Ho Rha, U Ki Kim, J Jung, E Suk Hwang, JH Choi, C Seong Hwang
Applied Physics Letters 103 (18), 2013
212013
The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application
JS Jung, SH Rha, UK Kim, YJ Chung, YS Jung, JH Choi, CS Hwang
Applied Physics Letters 100 (18), 183503, 2012
212012
Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation
BJ Choi, S Choi, T Eom, SH Rha, KM Kim, CS Hwang
Applied Physics Letters 97 (13), 2010
212010
Semiconductor devices and methods of fabricating the same
J Baek, S Rha, S Ahn, W You, NI Lee
US Patent 9,524,937, 2016
172016
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