Himanshu Madan
Himanshu Madan
Intel, PennState University
Verified email at intel.com
Title
Cited by
Cited by
Year
Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of AlO
A Ali, HS Madan, AP Kirk, DA Zhao, DA Mourey, MK Hudait, RM Wallace, ...
Applied Physics Letters 97, 143502, 2010
1182010
Small-Signal Response of Inversion Layers in High-Mobility $ hbox {In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} $ MOSFETs Made With Thin High-$ kappa $ Dielectrics
A Ali, H Madan, S Koveshnikov, S Oktyabrsky, R Kambhampati, T Heeg, ...
Electron Devices, IEEE Transactions on 57 (4), 742-748, 2010
912010
Demonstration of In 0.9 Ga 0.1 As/GaAs 0.18 Sb 0.82 near broken-gap tunnel FET with I ON= 740μA/μm, G M= 70μS/μm and gigahertz switching performance at V Ds= 0.5 V
R Bijesh, H Liu, H Madan, D Mohata, W Li, NV Nguyen, D Gundlach, ...
2013 IEEE International Electron Devices Meeting, 28.2. 1-28.2. 4, 2013
592013
Quantitative mapping of phase coexistence in Mott-Peierls insulator during electronic and thermally driven phase transition
H Madan, M Jerry, A Pogrebnyakov, T Mayer, S Datta
ACS nano 9 (2), 2009-2017, 2015
362015
Demonstration of p-type In0.7Ga0.3As/GaAs0.35Sb0.65and n-type GaAs0.4Sb0.6/In0.65Ga0.35As complimentary Heterojunction Vertical Tunnel FETs for …
R Pandey, H Madan, H Liu, V Chobpattana, M Barth, B Rajamohanan, ...
2015 Symposium on VLSI Technology (VLSI Technology), T206-T207, 2015
302015
26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer
H Madan, HT Zhang, M Jerry, D Mukherjee, N Alem, R Engel-Herbert, ...
2015 IEEE International Electron Devices Meeting (IEDM), 9.3. 1-9.3. 4, 2015
292015
Experimental determination of quantum and centroid capacitance in arsenide–antimonide quantum-well MOSFETs incorporating nonparabolicity effect
A Ali, H Madan, R Misra, A Agrawal, P Schiffer, JB Boos, BR Bennett, ...
IEEE transactions on electron devices 58 (5), 1397-1403, 2011
282011
Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide
H Madan, MJ Hollander, M LaBella, R Cavalero, D Snyder, JA Robinson, ...
2012 International Electron Devices Meeting, 4.3. 1-4.3. 4, 2012
272012
Enhancement-mode antimonide quantum-well MOSFETs with high electron mobility and gigahertz small-signal switching performance
A Ali, H Madan, A Agrawal, I Ramirez, R Misra, JB Boos, BR Bennett, ...
IEEE electron device letters 32 (12), 1689-1691, 2011
232011
Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET
CD Young, MO Baykan, A Agrawal, H Madan, K Akarvardar, C Hobbs, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 18-19, 2011
182011
Effect of interface states on the performance of antimonide nMOSFETs
A Ali, H Madan, MJ Barth, JB Boos, BR Bennett, S Datta
IEEE electron device letters 34 (3), 360-362, 2013
152013
Asymmetric tunnel field-effect transistors as frequency multipliers
H Madan, V Saripalli, H Liu, S Datta
IEEE electron device letters 33 (11), 1547-1549, 2012
152012
Advanced composite high-k gate stack for mixed anion arsenide-antimonide quantum well transistors
A Ali, H Madan, R Misra, E Hwang, A Agrawal, I Ramirez, P Schiffer, ...
NAVAL RESEARCH LAB WASHINGTON DC, 2010
122010
Performance and variability in multi-VTFinFETs using fin doping
K Akarvardar, CD Young, D Veksler, KW Ang, I Ok, M Rodgers, V Kaushik, ...
Proceedings of Technical Program of 2012 VLSI Technology, System and …, 2012
112012
Fermi level unpinning of GaSb(100) using Plasma Enhanced ALD Al2O3dielectric
A Ali, HS Madan, AP Kirk, RM Wallace, DA Zhao, DA Mourey, M Hudait, ...
68th Device Research Conference, 27-30, 2010
112010
Short-channel graphene nanoribbon transistors with enhanced symmetry between p-and n-branches
MJ Hollander, H Madan, N Shukla, DA Snyder, JA Robinson, S Datta
Applied Physics Express 7 (5), 055103, 2014
102014
Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics
H Madan, MJ Hollander, JA Robinson, S Datta
70th Device Research Conference, 181-182, 2012
92012
Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors
A Ali, H Madan, R Misra, E Hwang, A Agrawal, I Ramirez, P Schiffer, ...
2010 International Electron Devices Meeting, 6.3. 1-6.3. 4, 2010
92010
Extraction of interface state density in oxide/III–V gate stacks
D Veksler, G Bersuker, H Madan, L Morassi, G Verzellesi
Semiconductor Science and Technology 30 (6), 065013, 2015
82015
Analysis and benchmarking of graphene based RF low noise amplifiers
H Madan, MJ Hollander, JA Robinson, S Datta
71st Device Research Conference, 41-42, 2013
82013
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