| State of the art 58W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC amplifiers S Piotrowicz, E Morvan, R Aubry, S Bansropun, T Bouvet, E Chartier, ... 2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 1-4, 2008 | 65 | 2008 |
| Two-stage GaN HEMT amplifier with gate–source voltage shaping for efficiency versus bandwidth enhancements A Ramadan, T Reveyrand, A Martin, JM Nebus, P Bouysse, L Lapierre, ... IEEE Transactions on Microwave Theory and Techniques 59 (3), 699-706, 2010 | 36 | 2010 |
| Modeling of trap induced dispersion of large signal dynamic characteristics of GaN HEMTs O Jardel, S Laurent, T Reveyrand, R Quéré, P Nakkala, A Martin, ... 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-4, 2013 | 34 | 2013 |
| Trap characterization of microwave GaN HEMTs based on frequency dispersion of the output-admittance C Potier, A Martin, M Campovecchio, S Laurent, R Quéré, JC Jacquet, ... 2014 44th European Microwave Conference, 1408-1411, 2014 | 30 | 2014 |
| Experimental study on effect of second-harmonic injection at input of classes F and F− 1 GaN power amplifiers A Ramadan, T Reveyrand, A Martin, JM Nebus, P Bouysse, L Lapierre, ... Electronics Letters 46 (8), 570-572, 2010 | 29 | 2010 |
| Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters C Potier, JC Jacquet, C Dua, A Martin, M Campovecchio, M Oualli, ... International Journal of Microwave and Wireless Technologies 7 (3-4), 287-296, 2015 | 25 | 2015 |
| Efficiency enhancement of GaN power HEMTs by controlling gate-source voltage waveform shape A Ramadan, A Martin, T Reveyrand, JM Nebus, P Bouysse, L Lapierre, ... 2009 European Microwave Conference (EuMC), 1840-1843, 2009 | 21 | 2009 |
| A new GaN-based high-speed and high-power switching circuit for envelope-tracking modulators P Augeau, P Bouysse, A Martin, JM Nebus, R Quéré, L Lapierre, O Jardel, ... International journal of microwave and wireless technologies 6 (1), 13-21, 2014 | 17 | 2014 |
| Design of GaN-based balanced cascode cells for wide-band distributed power amplifier A Martin, T Reveyrand, M Campovecchio, R Aubry, S Piotrowicz, D Floriot, ... 2007 European Microwave Integrated Circuit Conference, 154-157, 2007 | 16 | 2007 |
| Implementation of dual gate and drain dynamic voltage biasing to mitigate load modulation effects of supply modulators in envelope tracking power amplifiers P Medrel, A Delias, P Augeau, A Martin, G Neveux, P Bouysse, JM Nébus 2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-4, 2014 | 15 | 2014 |
| Pulsed characterisation of trapping dynamics in AlGaN/GaN HEMTs P Nakkala, A Martin, M Campovecchio, S Laurent, P Bouysse, ... Electronics letters 49 (22), 1406-1407, 2013 | 15 | 2013 |
| Time domain envelope characterization of power amplifiers for linear and high efficiency design solutions P Medrel, T Reveyrand, A Martin, P Bouysse, JM Nebus, J Sombrin WAMICON 2013, 1-6, 2013 | 15 | 2013 |
| Balanced AlGaN/GaN HEMT cascode cells: design method for wideband distributed amplifiers A Martin, T Reveyrand, M Campovecchio, R Aubry, S Piotrowicz, D Floriot, ... Electronics Letters 44 (2), 116-118, 2008 | 11 | 2008 |
| Pulsed gate bias control of GaN HEMTs to improve pulse‐to‐pulse stability in radar applications J Delprato, A Délias, P Medrel, D Barataud, M Campovecchio, G Neveux, ... Electronics Letters 51 (13), 1023-1025, 2015 | 10 | 2015 |
| Study and design of high efficiency switch mode GaN power amplifiers at L-band frequency A Ramadan, A Martin, D Sardin, T Reveyrand, JM Nebus, P Bouysse, ... 2009 International Conference on Advances in Computational Tools for …, 2009 | 9 | 2009 |
| A new high speed and high efficiency GaN HEMT switching cell for envelope tracking modulators A Disserand, P Bouysse, A Martin, R Quéré, O Jardel, L Lapierre 2016 46th European Microwave Conference (EuMC), 281-284, 2016 | 8 | 2016 |
| Design method of balanced AlGaN/GaN HEMT cascode cells for wideband distributed power amplifiers A Martin, T Reveyrand, M Campovecchio, R Aubry, S Piotrowicz, D Floriot, ... Proceedings of the European Microwave Association Vol 261, 267, 2008 | 8 | 2008 |
| Modelling of a 4-18 GHz 6 W flip-chip integrated power amplifier based on GaN HEMTs technology S De Meyer, A Philippon, M Campovecchio, C Charbonniaud, ... European Gallium Arsenide and Other Semiconductor Application Symposium …, 2005 | 7 | 2005 |
| Power switching cell with normally conducting field-effect transistors O Jardel, R Quere, S Piotrowicz, P Bouysse, S Delage, A Martin US Patent 10,038,441, 2018 | 6 | 2018 |
| Étude d’une nouvelle filière de composants sur technologie nitrure de gallium: conception et réalisation d’amplificateurs distribués de puissance large bande à cellules … A Philippon-Martin Limoges, 2007 | 6 | 2007 |
