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Seonghyun Kim
Seonghyun Kim
School of Material Science and Engineering, Gwangju Institute of Science and Technology
Verified email at gist.ac.kr
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Cited by
Year
Streptococcus pneumoniae serotype 19A in children, South Korea
EH Choi, SH Kim, BW Eun, SJ Kim, NH Kim, J Lee, HJ Lee
Emerging infectious diseases 14 (2), 275, 2008
3142008
Excellent Selector Characteristics of Nanoscale for High-Density Bipolar ReRAM Applications
M Son, J Lee, J Park, J Shin, G Choi, S Jung, W Lee, S Kim, S Park, ...
Electron Device Letters, IEEE, 1-3, 2011
2792011
A low‐temperature‐grown oxide diode as a new switch element for high‐density, nonvolatile memories
MJ Lee, S Seo, DC Kim, SE Ahn, DH Seo, IK Yoo, IG Baek, DS Kim, ...
Advanced Materials 19 (1), 73-76, 2007
2572007
ATLAS measurements of the properties of jets for boosted particle searches
G Aad, B Abbott, J Abdallah, SA Khalek, AA Abdelalim, B Abi, M Abolins, ...
Physical Review D 86 (7), 072006, 2012
1722012
-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application
J Shin, I Kim, KP Biju, M Jo, J Park, J Lee, S Jung, W Lee, S Kim, S Park, ...
Journal of Applied Physics 109 (3), 033712, 2011
1552011
Evidence for production and measurement of
T Aaltonen, BÁ González, S Amerio, D Amidei, A Anastassov, A Annovi, ...
Physical Review D 84 (3), 031104, 2011
1412011
Electrode dependence of resistance switching in polycrystalline NiO films
S Seo, MJ Lee, DC Kim, SE Ahn, BH Park, YS Kim, IK Yoo, IS Byun, ...
Applied Physics Letters 87 (26), 263507, 2005
1392005
High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays
W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ...
ACS nano 6 (9), 8166-8172, 2012
1372012
Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications
J Lee, J Shin, D Lee, W Lee, S Jung, M Jo, J Park, KP Biju, S Kim, S Park, ...
Electron Devices Meeting (IEDM), 2010 IEEE International, 19.5. 1-19.5. 4, 2010
1242010
Lehá r, J., Kryukov, GV, Sonkin, D., et al.(2012)
J Barretina, G Caponigro, N Stransky, K Venkatesan, AA Margolin, S Kim, ...
The Cancer Cell Line Encyclopedia enables predictive modelling of anticancer …, 0
103
Multibit Operation of -Based ReRAM by Schottky Barrier Height Engineering
J Park, KP Biju, S Jung, W Lee, J Lee, S Kim, S Park, J Shin, H Hwang
Electron Device Letters, IEEE 32 (4), 476-478, 2011
962011
Ultrathin (<10nm) Nb2O5/NbO2hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications
S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ...
2012 Symposium on VLSI Technology (VLSIT), 155-156, 2012
912012
Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays
W Lee, J Park, J Shin, J Woo, S Kim, G Choi, S Jung, S Park, D Lee, ...
2012 Symposium on VLSI Technology (VLSIT), 37-38, 2012
872012
Resistive switching characteristics and mechanism of thermally grown WOx thin films
KP Biju, X Liu, M Siddik, S Kim, J Shin, I Kim, A Ignatiev, H Hwang
Journal of Applied Physics 110, 064505, 2011
692011
Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories
S Kim, J Park, J Woo, C Cho, W Lee, J Shin, G Choi, S Park, D Lee, ...
Microelectronic Engineering 107, 33-36, 2013
642013
Self-Selective Characteristics of Nanoscale Devices for High-Density ReRAM Applications
M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ...
IEEE electron device letters 33 (5), 718-720, 2012
572012
Complementary resistive switching in niobium oxide-based resistive memory devices
X Liu, SM Sadaf, S Park, S Kim, E Cha, D Lee, GY Jung, H Hwang
IEEE electron device letters 34 (2), 235-237, 2013
562013
Search for a Z'at the Z resonance
O Adriani, M Aguilar-Benitez, S Ahlen, J Alcaraz, A Aloisio, G Alverson, ...
Physics Letters B 306 (1-2), 187-196, 1993
551993
Effect of Scaling -Based RRAMs on Their Resistive Switching Characteristics
S Kim, KP Biju, M Jo, S Jung, J Park, J Lee, W Lee, J Shin, S Park, ...
Electron Device Letters, IEEE, 1-3, 2011
532011
NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application
WG Kim, HM Lee, BY Kim, KH Jung, TG Seong, S Kim, HC Jung, HJ Kim, ...
2014 symposium on VLSI technology (VLSI-Technology): digest of technical …, 2014
482014
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