Hong Dong
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HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ...
ACS nano 7 (11), 10354-10361, 2013
MoS2 functionalization for ultra-thin atomic layer deposited dielectrics
A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ...
Applied Physics Letters 104 (11), 2014
Rational combination of covalent-organic framework and nano TiO2 by covalent bonds to realize dramatically enhanced photocatalytic activity
CC Li, MY Gao, XJ Sun, HL Tang, H Dong, FM Zhang
Applied Catalysis B: Environmental 266, 118586, 2020
Construction of Z-scheme Cu2O/Cu/AgBr/Ag photocatalyst with enhanced photocatalytic activity and stability under visible light
J He, DW Shao, LC Zheng, LJ Zheng, DQ Feng, JP Xu, XH Zhang, ...
Applied Catalysis B: Environmental 203, 917-926, 2017
Boosting visible-light-driven hydrogen evolution of covalent organic frameworks through compositing with MoS 2: a promising candidate for noble-metal-free photocatalysts
MY Gao, CC Li, HL Tang, XJ Sun, H Dong, FM Zhang
Journal of Materials Chemistry A 7 (35), 20193-20200, 2019
Realistic metal–graphene contact structures
C Gong, S McDonnell, X Qin, A Azcatl, H Dong, YJ Chabal, K Cho, ...
ACS nano 8 (1), 642-649, 2014
Enhanced photocatalytic activities of g-C3N4 with large specific surface area via a facile one-step synthesis process
D Feng, Y Cheng, J He, L Zheng, D Shao, W Wang, W Wang, F Lu, ...
Carbon 125, 454-463, 2017
Impact of N {sub 2} and forming gas plasma exposure on the growth and interfacial characteristics of Al {sub 2} O {sub 3} on AlGaN
X Qin, H Dong, B Brennan, A Azacatl, J Kim, RM Wallace
Applied Physics Letters 103 (22), 2013
Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
RV Galatage, DM Zhernokletov, H Dong, B Brennan, CL Hinkle, ...
Journal of Applied Physics 116 (1), 2014
A crystalline oxide passivation for Al2O3/AlGaN/GaN
X Qin, H Dong, J Kim, RM Wallace
Applied Physics Letters 105 (14), 2014
Enhanced photocatalytic performances and magnetic recovery capacity of visible-light-driven Z-scheme ZnFe2O4/AgBr/Ag photocatalyst
J He, Y Cheng, T Wang, D Feng, L Zheng, D Shao, W Wang, W Wang, ...
Applied Surface Science 440, 99-106, 2018
Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors
RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ...
Applied Physics Letters 99 (17), 2011
Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems
S McDonnell, H Dong, JM Hawkins, B Brennan, M Milojevic, ...
Applied Physics Letters 100 (14), 2012
Electronic structures, magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2
M Wu, X Yao, Y Hao, H Dong, Y Cheng, H Liu, F Lu, W Wang, K Cho, ...
Physics Letters A 382 (2-3), 111-115, 2018
A class of monolayer metal halogenides MX2: electronic structures and band alignments
F Lu, W Wang, X Luo, X Xie, Y Cheng, H Dong, H Liu, WH Wang
Applied Physics Letters 108 (13), 2016
In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN
B Brennan, X Qin, H Dong, J Kim, RM Wallace
Applied Physics Letters 101 (21), 2012
Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors
RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ...
Applied Physics Letters 102 (13), 2013
Indium diffusion through high-k dielectrics in high-k/InP stacks
H Dong, W Cabrera, RV Galatage, KC Santosh, B Brennan, X Qin, ...
Applied Physics Letters 103 (6), 061601, 2013
Surface and interfacial reaction study of half cycle atomic layer deposited Al2O3 on chemically treated InP surfaces
B Brennan, H Dong, D Zhernokletov, J Kim, RM Wallace
Applied Physics Express 4 (12), 125701, 2011
GaN as an Interfacial Passivation Layer: Tuning Band Offset and Removing Fermi Level Pinning for III–V MOS Devices
Z Zhang, R Cao, C Wang, HB Li, H Dong, W Wang, F Lu, Y Cheng, X Xie, ...
ACS Applied Materials and Interfaces 7 (9), 5141, 2015
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