| (In, Sn) 2O3∕ TiO2∕ Pt Schottky-type diode switch for the TiO2 resistive switching memory array YC Shin, J Song, KM Kim, BJ Choi, S Choi, HJ Lee, GH Kim, T Eom, ... Applied Physics Letters 92 (16), 2008 | 101 | 2008 |
| Multicolor changeable optical coating by adopting multiple layers of ultrathin phase change material film S Yoo, T Gwon, T Eom, S Kim, CS Hwang Acs Photonics 3 (7), 1265-1270, 2016 | 87 | 2016 |
| Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor … BJ Choi, S Choi, T Eom, SW Ryu, DY Cho, J Heo, HJ Kim, CS Hwang, ... Chemistry of Materials 21 (12), 2386-2396, 2009 | 63 | 2009 |
| Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials SW Lee, BJ Choi, T Eom, JH Han, SK Kim, SJ Song, W Lee, CS Hwang Coordination Chemistry Reviews 257 (23-24), 3154-3176, 2013 | 62 | 2013 |
| Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories T Eom, S Choi, BJ Choi, MH Lee, T Gwon, SH Rha, W Lee, MS Kim, ... Chemistry of Materials 24 (11), 2099-2110, 2012 | 62 | 2012 |
| Bipolar resistive switching behavior of an amorphous Ge 2 Sb 2 Te 5 thin films with a Te layer S Yoo, T Eom, T Gwon, CS Hwang Nanoscale 7 (14), 6340-6347, 2015 | 52 | 2015 |
| Improved Initial Growth Behavior of SrO and SrTiO3 Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}2 as Sr-Precursor W Lee, W Jeon, CH An, MJ Chung, HJ Kim, T Eom, SM George, BK Park, ... Chemistry of Materials 27 (11), 3881-3891, 2015 | 43 | 2015 |
| Atomic Layer Deposition of GeTe Films Using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and Methanol T Gwon, T Eom, S Yoo, HK Lee, DY Cho, MS Kim, I Buchanan, M Xiao, ... Chemistry of Materials 28 (19), 7158-7166, 2016 | 37 | 2016 |
| Copper oxide buffer layers by pulsed‐chemical vapor deposition for semitransparent perovskite solar cells T Eom, S Kim, RE Agbenyeke, H Jung, SM Shin, YK Lee, CG Kim, ... Advanced Materials Interfaces 8 (1), 2001482, 2021 | 33 | 2021 |
| Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms T Gwon, T Eom, S Yoo, C Yoo, E Park, S Kim, MS Kim, I Buchanan, ... Chemistry of Materials 29 (19), 8065-8072, 2017 | 33 | 2017 |
| Switching power reduction in phase change memory cell using CVD Ge2Sb2Te5 and ultrathin TiO2 films BJ Choi, SH Oh, S Choi, T Eom, YC Shin, KM Kim, KW Yi, CS Hwang, ... Journal of the electrochemical society 156 (1), H59, 2008 | 32 | 2008 |
| Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application T Eom, T Gwon, S Yoo, BJ Choi, MS Kim, I Buchanan, S Ivanov, M Xiao, ... Chemistry of Materials 27 (10), 3707-3713, 2015 | 27 | 2015 |
| Influence of the Kinetic Adsorption Process on the Atomic Layer Deposition Process of (GeTe2)(1–x)(Sb2Te3)x Layers Using Ge4+–Alkoxide Precursors T Eom, T Gwon, S Yoo, BJ Choi, MS Kim, I Buchanan, M Xiao, CS Hwang Chemistry of Materials 26 (4), 1583-1591, 2014 | 25 | 2014 |
| Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation BJ Choi, S Choi, T Eom, SH Rha, KM Kim, CS Hwang Applied Physics Letters 97 (13), 2010 | 23 | 2010 |
| Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory ES Park, C Yoo, W Kim, M Ha, JW Jeon, T Eom, YK Lee, CS Hwang Chemistry of Materials 31 (21), 8752-8763, 2019 | 20 | 2019 |
| Chemical interaction and ligand exchange between a [(CH 3) 3 Si] 3 Sb precursor and atomic layer deposited Sb 2 Te 3 films T Eom, T Gwon, S Yoo, BJ Choi, MS Kim, S Ivanov, A Adamczyk, ... Journal of Materials Chemistry C 3 (6), 1365, 2015 | 19 | 2015 |
| Growth and Phase Separation Behavior in Ge-Doped Sb− Te Thin Films Deposited by Combined Plasma-Enhanced Chemical Vapor and Atomic Layer Depositions S Choi, BJ Choi, T Eom, JH Jang, W Lee, CS Hwang The Journal of Physical Chemistry C 114 (41), 17899-17904, 2010 | 17 | 2010 |
| Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO 2 detection at room temperature YG Song, IH Baek, JG Yim, T Eom, TM Chung, CH Lee, CS Hwang, ... Journal of Materials Chemistry A 10 (9), 4711-4719, 2022 | 16 | 2022 |
| Conformational heterogeneity of molecules physisorbed on a gold surface at room temperature M Kang, H Kim, E Oleiki, Y Koo, H Lee, H Joo, J Choi, T Eom, G Lee, ... Nature Communications 13 (1), 4133, 2022 | 14 | 2022 |
| Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity JM Hwang, SM Han, H Yang, S Yeo, SH Lee, CW Park, GH Kim, BK Park, ... Journal of Materials Chemistry C 9 (11), 3820-3825, 2021 | 13 | 2021 |
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National Universitysnu.ac.kr의 이메일 확인됨
