Amit Prakash
Amit Prakash
Crossbar Inc.,CA, USA
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TaO x-based nanoscale resistive switching memories: prospective and challenges
A Prakash, D Jana, S Maikap
Nanoscale Research Letters 8, 418, 2013
Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array
J Song, J Woo, A Prakash, D Lee, H Hwang
IEEE Electron Device Letters 36 (7), DOI: 10.1109/LED.2015.2430332, 2015
Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering
A Prakash, J Park, J Song, J Woo, EJ Cha, H Hwang
Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application
A Prakash, D Deleruyelle, J Song, M Bocquet, H Hwang
Applied Physics Letters 106, 233104, 2015
Room temperature synthesis of γ-Fe2O3 by sonochemical route and its response towards butane
I. Ray, S. Chakraborty, A. Chowdhury, S. Majumdar, A. Prakash, Ram Pyare ...
Sensors and Actuators B: Chemical 130, 882-888, 2008
Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application
E Cha, J Park, J Woo, D Lee, A Prakash, H Hwang
Applied Physics Letters 108 (15), 153502, 2016
Black Phosphorus N‐Type Field‐Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping
A Prakash, Y Cai, G Zhang, YW Zhang, KW Ang
Small, 2016
Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device
J Song, J Woo, S Lee, A Prakash, J Yoo, K Moon, H Hwang
IEEE Electron Device Letters 37 (7), 932-934, 2016
Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration
A Prakash, S Maikap, SZ Rahaman, S Majumdar, S Manna, SK Ray
Nanoscale Research Letters 8, 220, 2013
Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte
SZ Rahaman, S Maikap, A Das, A Prakash, YH Wu, CS Lai, TC Tien, ...
Nanoscale Research Letters 7, 614-624, 2012
Improved resistive switching memory characteristics using core-shell IrOx nano-dots in Al2O3/WOx bilayer structure
W Banerjee, S Maikap, SZ Rahaman, A Prakash, TC Tien, WC Li, ...
Journal of The Electrochemical Society 159 (2), H177, 2011
Bidirectional threshold switching in engineered multilayer (Cu2O/Ag: Cu2O/Cu2O) stack for cross-point selector application
J Song, A Prakash, D Lee, J Woo, E Cha, S Lee, H Hwang
Applied Physics Letters 107 (11), 113504, 2015
Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
A Prakash, S Maikap, HC Chiu, TC Tien, CS Lai
Nanoscale Research Letters 9, 125, 2014
Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM
J Song, D Lee, J Woo, E Koo, Y., Cha, S Lee, J Park, K Moon, SH Misha, ...
Electron Device Letters, IEEE 35 (6), 636 - 638, DOI: 10.1109/LED.2014.2316544, 2014
Bipolar resistive switching memory using bilayer TaOx/WOx films
A Prakash, S Maikap, CS Lai, TC Tien, WS Chen, HY Lee, FT Chen, ...
Solid-State Electronics 72, 35-40, 2012
High-κ Al2O3/WOx bilayer dielectrics for low-power resistive switching memory applications
W Banerjee, SZ Rahaman, A Prakash, S Maikap
Japanese Journal of Applied Physics 50 (10S), 10PH01, 2011
Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)
Behnoush Attarimashalkoubeh, Amit Prakash, Sangheon Lee, Jeonghwan Song ...
ECS Solid State Letters 3 (10), P120-P122, 2014
Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory
A Prakash, H Hwang
Physical Sciences Reviews 1 (6), 2016
Understanding of multi-level resistive switching mechanism in GeO x through redox reaction in H 2 O 2/sarcosine prostate cancer biomarker detection
S Samanta, SZ Rahaman, A Roy, S Jana, S Chakrabarti, R Panja, S Roy, ...
Scientific reports 7 (1), 1-12, 2017
Impact of electrically formed interfacial layer and improved memory characteristics of IrO x/high-κ x/W structures containing AlO x, GdO x, HfO x, and TaO x switching materials
A Prakash, S Maikap, W Banerjee, D Jana, CS Lai
Nanoscale research letters 8 (1), 1-12, 2013
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