| TaO x-based nanoscale resistive switching memories: prospective and challenges A Prakash, D Jana, S Maikap Nanoscale Research Letters 8, 418, 2013 | 221* | 2013 |
| Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array J Song, J Woo, A Prakash, D Lee, H Hwang IEEE Electron Device Letters 36 (7), DOI: 10.1109/LED.2015.2430332, 2015 | 165 | 2015 |
| Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering A Prakash, J Park, J Song, J Woo, EJ Cha, H Hwang IEEE ELECTRON DEVICE LETTERS 36 (1), 32-34, 2015 | 144 | 2015 |
| Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application E Cha, J Park, J Woo, D Lee, A Prakash, H Hwang Applied Physics Letters 108 (15), 2016 | 105 | 2016 |
| Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application A Prakash, D Deleruyelle, J Song, M Bocquet, H Hwang Applied Physics Letters 106, 233104, 2015 | 100 | 2015 |
| Black Phosphorus N‐Type Field‐Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping A Prakash, Y Cai, G Zhang, YW Zhang, KW Ang Small, 2016 | 76 | 2016 |
| Multilevel cell storage and resistance variability in resistive random access memory A Prakash, H Hwang Physical Sciences Reviews 1 (6), 20160010, 2016 | 73 | 2016 |
| Room temperature synthesis of γ-Fe2O3 by sonochemical route and its response towards butane I. Ray, S. Chakraborty, A. Chowdhury, S. Majumdar, A. Prakash, Ram Pyare ... Sensors and Actuators B: Chemical 130, 882-888, 2008 | 67 | 2008 |
| Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device J Song, J Woo, S Lee, A Prakash, J Yoo, K Moon, H Hwang IEEE Electron Device Letters 37 (7), 932-934, 2016 | 59 | 2016 |
| Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration A Prakash, S Maikap, SZ Rahaman, S Majumdar, S Manna, SK Ray Nanoscale Research Letters 8, 220, 2013 | 51 | 2013 |
| Bidirectional threshold switching in engineered multilayer (Cu2O/Ag: Cu2O/Cu2O) stack for cross-point selector application J Song, A Prakash, D Lee, J Woo, E Cha, S Lee, H Hwang Applied Physics Letters 107 (11), 2015 | 48 | 2015 |
| Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM J Song, D Lee, J Woo, E Koo, Y., Cha, S Lee, J Park, K Moon, SH Misha, ... Electron Device Letters, IEEE 35 (6), 636 - 638, DOI: 10.1109/LED.2014.2316544, 2014 | 46 | 2014 |
| Improved resistive switching memory characteristics using core-shell IrOx nano-dots in Al2O3/WOx bilayer structure W Banerjee, S Maikap, SZ Rahaman, A Prakash, TC Tien, WC Li, ... Journal of The Electrochemical Society 159 (2), H177, 2011 | 39 | 2011 |
| Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface A Prakash, S Maikap, HC Chiu, TC Tien, CS Lai Nanoscale Research Letters 9, 125, 2014 | 37 | 2014 |
| Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection S Samanta, SZ Rahaman, A Roy, S Jana, S Chakrabarti, R Panja, S Roy, ... Scientific Reports 7 (1), 11240, 2017 | 36 | 2017 |
| Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte SZ Rahaman, S Maikap, A Das, A Prakash, YH Wu, CS Lai, TC Tien, ... Nanoscale Research Letters 7, 614-624, 2012 | 36 | 2012 |
| Bipolar resistive switching memory using bilayer TaOx/WOx films A Prakash, S Maikap, CS Lai, TC Tien, WS Chen, HY Lee, FT Chen, ... Solid-State Electronics 72, 35-40, 2012 | 35 | 2012 |
| High-κ Al2O3/WOx bilayer dielectrics for low-power resistive switching memory applications W Banerjee, SZ Rahaman, A Prakash, S Maikap Japanese Journal of Applied Physics 50 (10S), 10PH01, 2011 | 35 | 2011 |
| Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM) Behnoush Attarimashalkoubeh, Amit Prakash, Sangheon Lee, Jeonghwan Song ... ECS Solid State Letters 3 (10), P120-P122, 2014 | 30 | 2014 |
| Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory A Prakash, D Jana, S Samanta, S Maikap Nanoscale Research Letters 8, 418, 2013 | 30 | 2013 |
Siddheswar MaikapProfessor of Electronics Engineering, Chang Gung Universitymail.cgu.edu.tw의 이메일 확인됨
