Huai-Yu Cheng
Huai-Yu Cheng
Senior Researcher, IBM/Macronix PCRAM Joint Project, Macronix international Co., Ltd.
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Recent progress in phase-change memory technology
GW Burr, MJ Brightsky, A Sebastian, HY Cheng, JY Wu, S Kim, NE Sosa, ...
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016
2712016
Crystallization times of Ge–Te phase change materials as a function of composition
S Raoux, HY Cheng, MA Caldwell, HSP Wong
Applied physics letters 95 (7), 071910, 2009
1402009
Rapid forearc uplift and subsidence caused by impinging bathymetric features: Examples from the New Hebrides and Solomon arcs
FW Taylor, P Mann, MG Bevis, RL Edwards, H Cheng, KB Cutler, SC Gray, ...
Tectonics 24 (6), 2005
872005
A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTezphase change material
HY Cheng, TH Hsu, S Raoux, JY Wu, PY Du, M Breitwisch, Y Zhu, EK Lai, ...
2011 International Electron Devices Meeting, 3.4. 1-3.4. 4, 2011
842011
Phase transitions in Ge–Te phase change materials studied by time-resolved x-ray diffraction
S Raoux, B Muñoz, HY Cheng, JL Jordan-Sweet
Applied Physics Letters 95 (14), 143118, 2009
832009
Wet etching of Ge2Sb2Te5 films and switching properties of resultant phase change memory cells
HY Cheng, CA Jong, RJ Chung, TS Chin, RT Huang
Semiconductor science and technology 20 (11), 1111, 2005
832005
Radiocarbon calibration and comparison to 50 kyr BP with paired 14C and 230Th dating of corals from Vanuatu and Papua New Guinea
KB Cutler, SC Gray, GS Burr, RL Edwards, FW Taylor, G Cabioch, ...
Radiocarbon 46 (3), 1127-1160, 2004
822004
Influence of interfaces and doping on the crystallization temperature of Ge–Sb
S Raoux, HY Cheng, JL Jordan-Sweet, B Munoz, M Hitzbleck
Applied Physics Letters 94 (18), 183114, 2009
652009
A low power phase change memory using thermally confined TaN/TiN bottom electrode
JY Wu, M Breitwisch, S Kim, TH Hsu, R Cheek, PY Du, J Li, EK Lai, Y Zhu, ...
2011 International Electron Devices Meeting, 3.2. 1-3.2. 4, 2011
512011
The impact of film thickness and melt-quenched phase on the phase transition characteristics of
HY Cheng, S Raoux, YC Chen
Journal of applied physics 107 (7), 074308, 2010
502010
The crystallization behavior of stoichiometric and off-stoichiometric Ga–Sb–Te materials for phase-change memory
HY Cheng, S Raoux, JL Jordan-Sweet
Applied Physics Letters 98 (12), 121911, 2011
492011
Characteristics of Ga–Sb–Te films for phase-change memory
HY Cheng, KF Kao, CM Lee, TS Chin
IEEE transactions on magnetics 43 (2), 927-929, 2007
492007
A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTezphase change material
HY Cheng, JY Wu, R Cheek, S Raoux, M BrightSky, D Garbin, S Kim, ...
2012 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2012
482012
Phase transitions in Ga–Sb phase change alloys
S Raoux, AK König, HY Cheng, D Garbin, RW Cheek, JL Jordan‐Sweet, ...
physica status solidi (b) 249 (10), 1999-2004, 2012
482012
ALD-based confined PCM with a metallic liner toward unlimited endurance
W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016
402016
-thick TaSiC amorphous films stable up to as a diffusion barrier for copper metallization
TY Lin, HY Cheng, TS Chin, CF Chiu, JS Fang
Applied Physics Letters 91 (15), 152908, 2007
402007
Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material
HY Cheng, WC Chien, M BrightSky, YH Ho, Y Zhu, A Ray, R Bruce, W Kim, ...
2015 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2015
382015
Crystallization kinetics of Ga–Sb–Te films for phase change memory
HY Cheng, KF Kao, CM Lee, TS Chin
Thin Solid Films 516 (16), 5513-5517, 2008
372008
Phase change memory having one or more non-constant doping profiles
YH Shih, HY Cheng, CF Chen, CI Wu, MH Lee, HL Lung, MJ Breitwisch, ...
US Patent 8,363,463, 2013
352013
Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application
HY Cheng, M BrightSky, S Raoux, CF Chen, PY Du, JY Wu, YY Lin, ...
2013 IEEE International Electron Devices Meeting, 30.6. 1-30.6. 4, 2013
342013
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