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YoungChol Byun
YoungChol Byun
ASM International
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Year
Atomic layer deposition of silicon nitride thin films: a review of recent progress, challenges, and outlooks
X Meng, YC Byun, HS Kim, JS Lee, AT Lucero, L Cheng, J Kim
Materials 9 (12), 1007, 2016
952016
Comparative Study of Atomic-Layer-Deposited Stacked (HfO2/Al2O3) and Nanolaminated (HfAlOx) Dielectrics on In0.53Ga0.47As
C Mahata, YC Byun, CH An, S Choi, Y An, H Kim
ACS Applied Materials & Interfaces 5 (10), 4195-4201, 2013
632013
Tailoring the Interface Quality between HfO2 and GaAs via in Situ ZnO Passivation Using Atomic Layer Deposition
YC Byun, S Choi, Y An, PC McIntyre, H Kim
ACS Applied Materials & Interfaces 6 (13), 10482-10488, 2014
362014
Thermal Stabilities of ALD-HfO2 Films on HF-and (NH4) 2S-Cleaned InP
CH An, YC Byun, MS Lee, H Kim
Journal of the Electrochemical Society 158 (12), G242, 2011
252011
Hollow cathode plasma-enhanced atomic layer deposition of silicon nitride using pentachlorodisilane
X Meng, HS Kim, AT Lucero, SM Hwang, JS Lee, YC Byun, J Kim, ...
ACS applied materials & interfaces 10 (16), 14116-14123, 2018
222018
Interfacial and electrical properties of HfO2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants
YC Byun, C Mahata, CH An, J Oh, R Choi, H Kim
Journal of Physics D: Applied Physics 45 (43), 435305, 2012
192012
High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment
MWH Ogyun Seok, Min-Koo Han, Young-Chul Byun, Jiyoung Kim, Hyun-Chang Shin
Solid-State Electronics 103, 49-53, 2015
152015
Impact of substrate temperature and film thickness on the interfacial evolution during atomic layer deposition of HfO2 on InP
CH An, YC Byun, MS Lee, H Kim
physica status solidi (RRL)–Rapid Research Letters 6 (5), 211-213, 2012
132012
In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As
JK Antonio T. Lucero, Young-Chul Byun , Xiaoye Qin, Lanxia Cheng, Hyoungsub ...
Electronic Materials Letters 11 (5), 769, 2015
11*2015
Atomic-layer-deposited (HfO2) 1− x (Al2O3) x nanolaminate films on InP with different Al2O3 contents
CH An, C Mahata, YC Byun, H Kim
Journal of Physics D: Applied Physics 46 (27), 275301, 2013
112013
Interfacial self-cleaning during PEALD HfO2 process on GaAs using TDMAH/O2 with different (NH4) 2S cleaning time
YC Byun, CH An, JY Choi, CY Kim, MH Cho, H Kim
Journal of the Electrochemical Society 158 (6), G141, 2011
112011
Thermal stability of ALD-HfO2/GaAs pretreated with trimethylaluminium
YC Byun, CH An, SH Lee, MH Cho, H Kim
Journal of The Electrochemical Society 159 (1), G6, 2011
102011
Low temperature (100 C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si
YC Byun, JG Lee, X Meng, JS Lee, AT Lucero, SJ Kim, CD Young, MJ Kim, ...
Applied Physics Letters 111 (8), 082905, 2017
82017
Electrical and band structural analyses of Ti1− xAlxOy films grown by atomic layer deposition on p-type GaAs
Y An, C Mahata, C Lee, S Choi, YC Byun, YS Kang, T Lee, J Kim, MH Cho, ...
Journal of Physics D: Applied Physics 48 (41), 415302, 2015
82015
Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0. 53Ga0. 47As Capacitors: Chemical Composition and Electrical Characteristics
S Choi, Y An, C Lee, J Song, MC Nguyen, YC Byun, R Choi, PC McIntyre, ...
Scientific reports 7 (1), 1-7, 2017
72017
Thermal instability of HfO2 on InP structure with ultrathin Al2O3 interface passivation layer
CH An, YC Byun, MH Cho, H Kim
physica status solidi (RRL)–Rapid Research Letters 6 (6), 247-249, 2012
72012
Electrical characteristics of HfO2 films on InP with different atomic‐layer‐deposition temperatures
CH An, C Mahata, YC Byun, MS Lee, YS Kang, MH Cho, H Kim
physica status solidi (a) 210 (7), 1381-1385, 2013
62013
Electrical properties of the HfO2–Al2O3 nanolaminates with homogeneous and graded compositions on InP
C Mahata, Y An, S Choi, YC Byun, DK Kim, T Lee, J Kim, MH Cho, H Kim
Current Applied Physics 16 (3), 294-299, 2016
52016
Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films
JK T.J. Park, Y.C. Byun, R. M. Wallace
The Journal of Chemical Physics 146 (5), 052821, 2017
42017
ZnO modified high aspect ratio carbon electrodes for hydrogen sensing applications
U Singh, HA Lee, YC Byun, A Kumar, S Seal, H Kim, HJ Cho
Procedia Engineering 25, 1669-1672, 2011
42011
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