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Shahriar Memaran
Shahriar Memaran
National High Magnetic Field Laboratory
magnet.fsu.edu의 이메일 확인됨 - 홈페이지
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One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy
PK Sahoo, S Memaran, Y Xin, L Balicas, HR Gutiérrez
Nature 553, 63-67, 2018
4752018
Field-Effect Transistors Based on Few-Layered α-MoTe2
NR Pradhan, D Rhodes, S Feng, Y Xin, S Memaran, BH Moon, ...
ACS nano 8 (6), 5911-5920, 2014
3882014
Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors
NR Pradhan, D Rhodes, S Memaran, JM Poumirol, D Smirnov, ...
Scientific reports 5 (1), 8979, 2015
1612015
Ambipolar molybdenum diselenide field-effect transistors: field-effect and hall mobilities
NR Pradhan, D Rhodes, Y Xin, S Memaran, L Bhaskaran, M Siddiq, S Hill, ...
ACS nano 8 (8), 7923-7929, 2014
1582014
Pronounced photovoltaic response from multilayered transition-metal dichalcogenides PN-junctions
S Memaran, NR Pradhan, Z Lu, D Rhodes, J Ludwig, Q Zhou, O Ogunsolu, ...
Nano letters 15 (11), 7532–7538, 2015
1152015
Bilayer lateral heterostructures of transition-metal dichalcogenides and their optoelectronic response
PK Sahoo, S Memaran, FA Nugera, Y Xin, T Díaz Márquez, Z Lu, ...
ACS nano 13 (11), 12372-12384, 2019
1032019
Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
NR Pradhan, C Garcia, B Isenberg, D Rhodes, S Feng, S Memaran, Y Xin, ...
Scientific reports 8 (1), 12745, 2018
272018
Layer-and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor
D Shcherbakov, P Stepanov, S Memaran, Y Wang, Y Xin, J Yang, K Wei, ...
Science Advances 7 (5), eabe2892, 2021
252021
Possible manifestations of the chiral anomaly and evidence for a magnetic field induced topological phase transition in the type-I Weyl semimetal TaAs
QR Zhang, B Zeng, YC Chiu, R Schönemann, S Memaran, W Zheng, ...
Physical Review B 100 (11), 115138, 2019
192019
Uncovering the behavior of Hf2Te2P and the candidate Dirac metal Zr2Te2P
KW Chen, S Das, D Rhodes, S Memaran, T Besara, T Siegrist, ...
Journal of Physics: Condensed Matter 28 (14), 14LT01, 2016
152016
ACS Nano 8, 5911 (2014)
NR Pradhan, D Rhodes, S Feng, Y Xin, S Memaran, BH Moon, ...
12
Sequential Edge-Epitaxy in 2D Lateral Heterostructures
PK Sahoo, S Memaran, Y Xin, L Balicas, HR Gutiérrez
arXiv preprint arXiv:1706.07014, 2017
42017
Thickness-and Twist-Angle-Dependent Interlayer Excitons in Metal Monochalcogenide Heterostructures
W Zheng, L Xiang, FA De Quesada, M Augustin, Z Lu, M Wilson, A Sood, ...
ACS nano 16 (11), 18695-18707, 2022
32022
Light sources with bias tunable spectrum based on van der Waals interface transistors
H Henck, D Mauro, D Domaretskiy, M Philippi, S Memaran, W Zheng, Z Lu, ...
Nature Communications 13 (1), 3917, 2022
32022
Quantum Hall effect in a two-dimensional semiconductor with large spin-orbit coupling
D Shcherbakov, J Yang, S Memaran, K Watanabe, T Taniguchi, ...
Physical Review B 106 (4), 045307, 2022
22022
Pronounced photovoltaic response from PN-junctions of multi-layered MoSe_2 on h-BN
S Memaran, NR Pradhan, Z Lu, D Rhodes, J Ludwig, Q Zhou, P Ajayan, ...
arXiv preprint arXiv:1411.2086, 2014
22014
Lateral PN Junctions Based on 2-D Materials
S Memaran
12018
Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells
D Shcherbakov, G Voigt, S Memaran, GB Liu, Q Wang, K Watanabe, ...
Nano Letters 24 (13), 3851-3857, 2024
2024
Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Ultrathin InSe Quantum Wells
D Shcherbakov, G Voigt, S Memaran, GB Liu, Q Wang, K Watanabe, ...
arXiv preprint arXiv:2312.03228, 2023
2023
Thickness and twist angle tunable moiré excitons in InSe/GaSe heterostructures
W Zheng, L Xiang, FAD Quesada, M Augustin, Z Lu, A Sood, F Wu, ...
APS March Meeting Abstracts 2022, D57. 007, 2022
2022
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