| A review of Ga2O3 materials, processing, and devices SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro Applied Physics Reviews 5 (1), 2018 | 2531 | 2018 |
| Wide band gap ferromagnetic semiconductors and oxides SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ... Journal of Applied Physics 93 (1), 1-13, 2003 | 1217 | 2003 |
| Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS SJ Pearton, F Ren, M Tadjer, J Kim Journal of Applied Physics 124 (22), 2018 | 585 | 2018 |
| Perspective—opportunities and future directions for Ga2O3 MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton ECS Journal of Solid State Science and Technology 6 (5), P356, 2017 | 474 | 2017 |
| Magnetic properties of n-GaMnN thin films GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ... Applied Physics Letters 80 (21), 3964-3966, 2002 | 448 | 2002 |
| Graphene-based nitrogen dioxide gas sensors G Ko, HY Kim, J Ahn, YM Park, KY Lee, J Kim Current Applied Physics 10 (4), 1002-1004, 2010 | 411 | 2010 |
| High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes S Oh, CK Kim, J Kim Acs Photonics 5 (3), 1123-1128, 2017 | 255 | 2017 |
| Review of radiation damage in GaN-based materials and devices SJ Pearton, R Deist, F Ren, L Liu, AY Polyakov, J Kim Journal of Vacuum Science & Technology A 31 (5), 2013 | 248 | 2013 |
| Radiation damage effects in Ga 2 O 3 materials and devices J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov Journal of Materials Chemistry C 7 (1), 10-24, 2019 | 229 | 2019 |
| Radiation effects in GaN materials and devices AY Polyakov, SJ Pearton, P Frenzer, F Ren, L Liu, J Kim Journal of Materials Chemistry C 1 (5), 877-887, 2013 | 229 | 2013 |
| Influence of MgO and passivation on AlGaN/GaN high-electron-mobility transistors B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ... Applied Physics Letters 80 (9), 1661-1663, 2002 | 222 | 2002 |
| High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata Applied Physics Letters 110 (19), 2017 | 206 | 2017 |
| Exfoliated β-Ga 2 O 3 nano-belt field-effect transistors for air-stable high power and high temperature electronics J Kim, S Oh, MA Mastro, J Kim Physical Chemistry Chemical Physics 18 (23), 15760-15764, 2016 | 180 | 2016 |
| AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ... Applied physics letters 82 (15), 2530-2532, 2003 | 175 | 2003 |
| Flexible graphene-based chemical sensors on paper substrates G Yang, C Lee, J Kim, F Ren, SJ Pearton Physical Chemistry Chemical Physics 15 (6), 1798-1801, 2013 | 164 | 2013 |
| Solid-State Electron JF Wu, SJ Chang, YK Su, RW Chuang, YP Hsu, CH Kuo, WC Lai, TC Wen, ... Solid-State Electron 13, 239, 1970 | 162* | 1970 |
| Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity S Oh, J Kim, F Ren, SJ Pearton, J Kim Journal of Materials Chemistry C 4 (39), 9245-9250, 2016 | 139 | 2016 |
| Defect-engineered graphene chemical sensors with ultrahigh sensitivity G Lee, G Yang, A Cho, JW Han, J Kim Physical Chemistry Chemical Physics 18 (21), 14198-14204, 2016 | 138 | 2016 |
| enhancement mode metal-oxide semiconductor field-effect transistors Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ... Applied physics letters 84 (15), 2919-2921, 2004 | 137 | 2004 |
| Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors G Yang, S Jang, F Ren, SJ Pearton, J Kim ACS applied materials & interfaces 9 (46), 40471-40476, 2017 | 135 | 2017 |
Stephen PeartonProfessor of Materials Science and Engineering, University of Floridamse.ufl.edu의 이메일 확인됨
