| TaO x -based resistive switching memories: prospective and challenges A Prakash, D Jana, S Maikap Nanoscale research letters 8, 1-17, 2013 | 221 | 2013 |
| Low-power switching of nonvolatile resistive memory using hafnium oxide HY Lee, PS Chen, CC Wang, S Maikap, PJ Tzeng, CH Lin, LS Lee, ... Japanese journal of applied physics 46 (4S), 2175, 2007 | 198 | 2007 |
| Mobility-enhancement technologies C Wee, S Maikop, CY Yu IEEE Circuits and Devices Magazine 21 (3), 21-36, 2005 | 150 | 2005 |
| Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications S Maikap, HY Lee, TY Wang, PJ Tzeng, CC Wang, LS Lee, KC Liu, ... Semiconductor science and technology 22 (8), 884, 2007 | 147 | 2007 |
| Nanocrystals for silicon-based light-emitting and memory devices SK Ray, S Maikap, W Banerjee, S Das Journal of Physics D: Applied Physics 46 (15), 153001, 2013 | 138 | 2013 |
| Conductive-bridging random access memory: challenges and opportunity for 3D architecture D Jana, S Roy, R Panja, M Dutta, SZ Rahaman, R Mahapatra, S Maikap Nanoscale research letters 10, 1-23, 2015 | 101 | 2015 |
| Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface SZ Rahaman, S Maikap, TC Tien, HY Lee, WS Chen, FT Chen, MJ Kao, ... Nanoscale research letters 7, 1-11, 2012 | 94 | 2012 |
| RRAM characteristics using a new Cr/GdOx/TiN structure D Jana, M Dutta, S Samanta, S Maikap Nanoscale research letters 9, 680, 2014 | 91 | 2014 |
| Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure S Maikap, D Jana, M Dutta, A Prakash Nanoscale Research Letters 9, 292, 2014 | 91* | 2014 |
| Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures K Das, M NandaGoswami, R Mahapatra, GS Kar, A Dhar, HN Acharya, ... Applied physics letters 84 (8), 1386-1388, 2004 | 78 | 2004 |
| Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film SZ Rahaman, S Maikap, WS Chen, HY Lee, FT Chen, MJ Kao, MJ Tsai Applied Physics Letters 101 (7), 2012 | 70 | 2012 |
| Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕ TiO2 multilayers S Maikap, TY Wang, PJ Tzeng, CH Lin, TC Tien, LS Lee, JR Yang, ... Applied physics letters 90 (26), 2007 | 67 | 2007 |
| Bipolar resistive switching memory using Cu metallic filament in Ge0. 4Se0. 6 solid electrolyte SZ Rahaman, S Maikap, HC Chiu, CH Lin, TY Wu, YS Chen, PJ Tzeng, ... Electrochemical and Solid-State Letters 13 (5), H159, 2010 | 63 | 2010 |
| Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs WC Hua, MH Lee, PS Chen, S Maikap, CW Liu, KM Chen IEEE electron device letters 25 (10), 693-695, 2004 | 63 | 2004 |
| Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure D Jana, S Samanta, S Maikap, HM Cheng Applied Physics Letters 108 (1), 2016 | 60 | 2016 |
| Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament SZ Rahaman, S Maikap, WS Chen, HY Lee, FT Chen, TC Tien, MJ Tsai Journal of Applied Physics 111 (6), 2012 | 57 | 2012 |
| Charge storage characteristics of atomic layer deposited RuOx nanocrystals S Maikap, TY Wang, PJ Tzeng, CH Lin, LS Lee, JR Yang, MJ Tsai Applied physics letters 90 (25), 2007 | 57 | 2007 |
| Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots W Banerjee, S Maikap, CS Lai, YY Chen, TC Tien, HY Lee, WS Chen, ... Nanoscale research letters 7, 1-12, 2012 | 56 | 2012 |
| Package-strain-enhanced device and circuit performance S Maikap, MH Liao, F Yuan, MH Lee, CF Huang, ST Chang, CW Liu IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 54 | 2004 |
| Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing … S Chakrabarti, S Ginnaram, S Jana, ZY Wu, K Singh, A Roy, P Kumar, ... Scientific Reports 7 (1), 4735, 2017 | 53 | 2017 |
Dr. Sk. Ziaur RahamanIndustrial Technology Research Institute, Electronic and Optoelectronic System Research LaboratoriesVerified email at itri.org.tw
