| Effect of tensile and compressive bending stress on electrical performance of flexible a-IGZO TFTs MM Billah, MM Hasan, J Jang IEEE Electron Device Letters 38 (7), 890-893, 2017 | 96 | 2017 |
| Analysis of improved performance under negative bias illumination stress of dual gate driving a-IGZO TFT by TCAD simulation MM Billah, MDH Chowdhury, M Mativenga, JG Um, RK Mruthyunjaya, ... IEEE Electron Device Letters 37 (6), 735-738, 2016 | 69 | 2016 |
| Origin of light instability in amorphous IGZO thin-film transistors and its suppression M Mativenga, F Haque, MM Billah, JG Um Scientific reports 11 (1), 14618, 2021 | 55 | 2021 |
| Highly Stable, Nanocrystalline, ZnO Thin-Film Transistor by Spray Pyrolysis Using High-K Dielectric JK Saha, MM Billah, RN Bukke, YG Kim, NN Mude, AB Siddik, MM Islam, ... IEEE Transactions on Electron Devices 67 (3), 1021-1026, 2020 | 48 | 2020 |
| Bending stress induced performance change in plastic oxide thin-film transistor and recovery by annealing at 300° C MM Hasan, MM Billah, MN Naik, JG Um, J Jang IEEE Electron Device Letters 38 (8), 1035-1038, 2017 | 44 | 2017 |
| Highly robust flexible oxide thin-film transistors by bulk accumulation X Li, MM Billah, M Mativenga, D Geng, YH Kim, TW Kim, YG Seol, J Jang IEEE Electron Device Letters 36 (8), 811-813, 2015 | 41 | 2015 |
| High‐performance coplanar dual‐channel a‐InGaZnO/a‐InZnO semiconductor thin‐film transistors with high field‐effect mobility MM Billah, AB Siddik, JB Kim, DK Yim, SY Choi, J Liu, D Severin, ... Advanced Electronic Materials 7 (3), 2000896, 2021 | 37 | 2021 |
| TCAD Simulation of Dual Gate a-IGZO TFTs with Source and Drain Offsets MM Billah, M Hasan, M Chun, J Jang IEEE Electron Device Letters 37 (11), 1442 - 1445, 2016 | 35 | 2016 |
| Effect of doping fluorine in offset region on performance of coplanar a-IGZO TFTs A Rahaman, MM Billah, JG Um, MM Hasan, J Jang IEEE Electron Device Letters 39 (9), 1318-1321, 2018 | 34 | 2018 |
| Triple-stack ZnO/AlZnO/YZnO heterojunction oxide thin-film transistors by spray pyrolysis for high mobility and excellent stability JK Saha, MM Billah, J Jang ACS applied materials & interfaces 13 (31), 37350-37362, 2021 | 32 | 2021 |
| Solution-Processed La Alloyed ZrOx High-k Dielectric for High-Performance ZnO Thin-Film Transistors MM Islam, JK Saha, RN Bukke, MM Hasan, MM Billah, NN Mude, A Ali, ... IEEE Electron Device Letters 41 (7), 1021-1024, 2020 | 29 | 2020 |
| Effect of grain boundary protrusion on electrical performance of low temperature polycrystalline silicon thin film transistors MM Billah, AB Siddik, JB Kim, L Zhao, SY Choi, DK Yim, J Jang IEEE Journal of the Electron Devices Society 7, 503-511, 2019 | 26 | 2019 |
| Reduced mechanical strain in bendable a-IGZO TFTs under dual-gate driving MM Billah, JU Han, MM Hasan, J Jang IEEE Electron Device Letters 39 (6), 835-838, 2018 | 24 | 2018 |
| Improvement of stability and performance of amorphous indium gallium zinc oxide thin film transistor by zinc-tin-oxide spray coating H Lee, S Lee, Y Kim, AB Siddik, MM Billah, J Lee, J Jang IEEE Electron Device Letters 41 (10), 1520-1523, 2020 | 23 | 2020 |
| Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor With Split Active Layer by N2O Annealing MH Rabbi, MM Billah, AB Siddik, S Lee, J Lee, J Jang IEEE Electron Device Letters 41 (12), 1782-1785, 2020 | 19 | 2020 |
| Millisecond positive bias recovery of negative bias illumination stressed amorphous InGaZnO thin-film transistors MM Billah, J Jang IEEE Electron Device Letters 38 (4), 477-480, 2017 | 16 | 2017 |
| Ultra-low power, emission gate driver with pulse width modulation using low-temperature poly-Si oxide thin-film transistors J Kim, MM Billah, J Jang IEEE Electron Device Letters 43 (2), 236-239, 2021 | 15 | 2021 |
| High voltage amorphous InGaZnO TFT with F doped drain offset structure C Park, MM Billah, AB Siddik, S Lee, B Han, J Jang IEEE Electron Device Letters 42 (10), 1476-1479, 2021 | 15 | 2021 |
| Analysis of the Solution-Processed a-SnOX and HfO2 Interface for Applications in Thin-Film Transistors C Avis, MM Billah, YG Kim, AB Siddik, J Jang ACS Applied Electronic Materials 3 (2), 651-657, 2021 | 15 | 2021 |
| Millisecond stretched exponential recovery of threshold voltage for mechanically stressed flexible a-IGZO thin-film transistors MM Billah, MM Hasan, J Jang IEEE Electron Device Letters 39 (5), 699-702, 2018 | 15 | 2018 |
Jin JangKyung Hee UniversityVerified email at khu.ac.kr
