Rohit Galatage
Rohit Galatage
Components Research Engineer
Verified email at intel.com
Title
Cited by
Cited by
Year
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
N Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ...
2017 Symposium on VLSI Technology, T230-T231, 2017
3622017
14nm ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications
Z Krivokapic, U Rana, R Galatage, A Razavieh, A Aziz, J Liu, J Shi, ...
2017 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2017
1832017
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ...
2016 IEEE International Electron Devices Meeting (IEDM), 2.7. 1-2.7. 4, 2016
1082016
Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
RV Galatage, DM Zhernokletov, H Dong, B Brennan, CL Hinkle, ...
Journal of Applied Physics 116 (1), 014504, 2014
692014
Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors
RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ...
Applied Physics Letters 99 (17), 172901, 2011
602011
Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors
RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ...
Applied Physics Letters 102 (13), 132903, 2013
442013
Indium diffusion through high-k dielectrics in high-k/InP stacks
H Dong, W Cabrera, RV Galatage, KC Santosh, B Brennan, X Qin, ...
Applied Physics Letters 103 (6), 061601, 2013
432013
Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer DepositedNanolaminate
B Chakrabarti, RV Galatage, EM Vogel
IEEE electron device letters 34 (7), 867-869, 2013
372013
Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in gate stacks
CL Hinkle, RV Galatage, RA Chapman, EM Vogel, HN Alshareef, ...
Applied Physics Letters 96 (10), 103502, 2010
372010
High-k metal gate fundamental learning and multi-Vt options for stacked nanosheet gate-all-around transistor
J Zhang, T Ando, CW Yeung, M Wang, O Kwon, R Galatage, R Chao, ...
2017 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2017
302017
Remote phonon and surface roughness limited universal electron mobility of In0. 53Ga0. 47As surface channel MOSFETs
AM Sonnet, RV Galatage, PK Hurley, E Pelucchi, K Thomas, A Gocalinska, ...
Microelectronic engineering 88 (7), 1083-1086, 2011
302011
Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)
PK Hurley, E O'Connor, S Monaghan, R Long, A O'Mahony, IM Povey, ...
ECS Transactions 25 (6), 113, 2009
282009
Channel geometry impact and narrow sheet effect of stacked nanosheet
CW Yeung, J Zhang, R Chao, O Kwon, R Vega, G Tsutsui, X Miao, ...
2018 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2018
232018
Selective GeOx-scavenging from interfacial layer on Si1−xGexchannel for high mobility Si/Si1−xGexCMOS application
CH Lee, H Kim, P Jamison, RG Southwick, S Mochizuki, K Watanabe, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
222016
Chemical and electrical characterization of the HfO2/InAlAs interface
B Brennan, RV Galatage, K Thomas, E Pelucchi, PK Hurley, J Kim, ...
Journal of Applied Physics 114 (10), 104103, 2013
212013
Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt
CL Hinkle, RV Galatage, RA Chapman, EM Vogel, HN Alshareef, ...
2010 Symposium on VLSI Technology, 183-184, 2010
212010
A comparative study of strain and Ge content in Si1−xGexchannel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
CH Lee, S Mochizuki, RG Southwick, J Li, X Miao, R Bao, T Ando, ...
2017 IEEE International Electron Devices Meeting (IEDM), 37.2. 1-37.2. 4, 2017
192017
The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
T Kent, K Tang, V Chobpattana, MA Negara, M Edmonds, W Mitchell, ...
The Journal of chemical physics 143 (16), 164711, 2015
182015
Surface and interfacial reaction study of InAs (100)-crystalline oxide interface
DM Zhernokletov, P Laukkanen, H Dong, RV Galatage, B Brennan, ...
Applied Physics Letters 102 (21), 211601, 2013
142013
Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition
CL Hinkle, RV Galatage, RA Chapman, EM Vogel, HN Alshareef, ...
Applied Physics Letters 100 (15), 153501, 2012
142012
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