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JAEGIL LEE
JAEGIL LEE
SK hynix
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Cited by
Year
Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ...
Applied Physics Letters 111 (24), 2017
2682017
Low turn-on voltage AlGaN/GaN-on-Si rectifier with gated ohmic anode
JG Lee, BR Park, CH Cho, KS Seo, HY Cha
IEEE Electron Device Letters 34 (2), 214-216, 2013
1172013
State-of-the-art AlGaN/GaN-on-Si heterojunction field effect transistors with dual field plates
JG Lee, BR Park, HJ Lee, M Lee, KS Seo, HY Cha
Applied Physics Express 5 (6), 066502, 2012
652012
Stable Subloop Behavior in Ferroelectric Si-Doped HfO2
K Lee, HJ Lee, TY Lee, HH Lim, MS Song, HK Yoo, DI Suh, JG Lee, Z Zhu, ...
ACS applied materials & interfaces 11 (42), 38929-38936, 2019
632019
High-Quality ICPCVD for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs
BR Park, JG Lee, W Choi, H Kim, KS Seo, HY Cha
IEEE Electron Device Letters 34 (3), 354-356, 2013
632013
High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors
JG Lee, HS Kim, KS Seo, CH Cho, HY Cha
Solid-State Electronics 122, 32-36, 2016
462016
Review of ferroelectric field-effect-transistors for three dimensional storage applications
HW Park, JG Lee, CS Hwang
Nanoselect, 2021
402021
Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors
SJ Kim, J Mohan, HS Kim, J Lee, SM Hwang, D Narayan, JG Lee, ...
Applied Physics Letters 115 (18), 2019
302019
Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistor
SW Han, JG Lee, CH Cho, HY Cha
Applied Physics Express 7 (11), 111002, 2014
302014
Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain
JG Lee, SW Han, BR Park, HY Cha
Applied Physics Express 7 (1), 014101, 2013
302013
Nonvolatile memory device and method of fabricating the same
HY Cha, JG Lee, KS Seo
KR Patent 1,013,953,740,000, 2014
212014
Schottky barrier diode embedded AlGaN/GaN switching transistor
BR Park, JY Lee, JG Lee, DM Lee, MK Kim, HY Cha
Semiconductor science and technology 28 (12), 125003, 2013
212013
Normally-off AlGaN/GaN-on-Si power switching device with embedded Schottky barrier diode
BR Park, JG Lee, HY Cha
Applied Physics Express 6 (3), 031001, 2013
212013
Field plated AlGaN/GaN-on-Si HEMTs for high voltage switching applications
JG Lee, HJ Lee, HY Cha, MS Lee, YM Ryoo, KS Seo, JK Mun
Journal of the Korean Physical Society 59, 2011
192011
Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer
JG Lee, HS Kim, DH Kim, SW Han, KS Seo, HY Cha
Semiconductor Science and Technology 30 (8), 085005, 2015
172015
Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere
JG Lee, HS Kim, JY Lee, KS Seo, HY Cha
Semiconductor Science and Technology 30 (11), 115008, 2015
162015
High‐performance e‐mode algan/gan mis‐hemt with dual gate insulator employing sion and hfon
IH Hwang, SK Eom, GH Choi, MJ Kang, JG Lee, HY Cha, KS Seo
Physica status solidi (a) 215 (10), 1700650, 2018
142018
Breakdown voltage enhancement in field plated AlGaN/GaN-on-Si HFETs using mesa-first prepassivation process
BR Park, JG Lee, HJ Lee, J Lim, KS Seo, HY Cha
Electronics Letters 48 (3), 181-182, 2012
142012
Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD
X Meng, J Lee, A Ravichandran, YC Byun, JG Lee, AT Lucero, SJ Kim, ...
IEEE Electron Device Letters 39 (8), 1195-1198, 2018
132018
Low temperature (400 C) ferroelectric Hf0. 5Zr0. 5O2 capacitors for next-generation FRAM applications
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, CD Young, J Kim, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
132017
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