| Recent progress in inkjet‐printed thin‐film transistors S Chung, K Cho, T Lee Advanced science 6 (6), 1801445, 2019 | 324 | 2019 |
| Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules K Cho, M Min, TY Kim, H Jeong, J Pak, JK Kim, J Jang, SJ Yun, YH Lee, ... ACS nano 9 (8), 8044-8053, 2015 | 252 | 2015 |
| Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors W Park, J Park, J Jang, H Lee, H Jeong, K Cho, S Hong, T Lee Nanotechnology 24 (9), 095202, 2013 | 244 | 2013 |
| Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors K Cho, W Park, J Park, H Jeong, J Jang, TY Kim, WK Hong, S Hong, T Lee ACS nano 7 (9), 7751-7758, 2013 | 243 | 2013 |
| Photoelectron Spectroscopic Imaging and Device Applications of Large-Area Patternable Single-Layer MoS2 Synthesized by Chemical Vapor Deposition W Park, J Baik, TY Kim, K Cho, WK Hong, HJ Shin, T Lee ACS nano 8 (5), 4961-4968, 2014 | 157 | 2014 |
| Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors TY Kim, K Cho, W Park, J Park, Y Song, S Hong, WK Hong, T Lee ACS nano 8 (3), 2774-2781, 2014 | 130 | 2014 |
| Enhancement of photodetection characteristics of MoS 2 field effect transistors using surface treatment with copper phthalocyanine J Pak, J Jang, K Cho, TY Kim, JK Kim, Y Song, WK Hong, M Min, H Lee, ... Nanoscale 7 (44), 18780-18788, 2015 | 129 | 2015 |
| Transparent Large-Area MoS2 Phototransistors with Inkjet-Printed Components on Flexible Platforms TY Kim, J Ha, K Cho, J Pak, J Seo, J Park, JK Kim, S Chung, Y Hong, ... ACS nano 11 (10), 10273-10280, 2017 | 95 | 2017 |
| Recent advances in interface engineering of transition-metal dichalcogenides with organic molecules and polymers K Cho, J Pak, S Chung, T Lee ACS nano 13 (9), 9713-9734, 2019 | 90 | 2019 |
| Enhanced charge injection properties of organic field‐effect transistor by molecular implantation doping Y Kim, S Chung, K Cho, D Harkin, WT Hwang, D Yoo, JK Kim, W Lee, ... Advanced Materials 31 (10), 1806697, 2019 | 83 | 2019 |
| Contact‐Engineered Electrical Properties of MoS2 Field‐Effect Transistors via Selectively Deposited Thiol‐Molecules K Cho, J Pak, JK Kim, K Kang, TY Kim, J Shin, BY Choi, S Chung, T Lee Advanced Materials 30 (18), 1705540, 2018 | 81 | 2018 |
| Redox‐induced asymmetric electrical characteristics of ferrocene‐alkanethiolate molecular devices on rigid and flexible substrates H Jeong, D Kim, G Wang, S Park, H Lee, K Cho, WT Hwang, MH Yoon, ... Advanced Functional Materials 24 (17), 2472-2480, 2014 | 81 | 2014 |
| Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes JK Kim, K Cho, TY Kim, J Pak, J Jang, Y Song, Y Kim, BY Choi, S Chung, ... Scientific reports 6 (1), 36775, 2016 | 73 | 2016 |
| Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors K Cho, TY Kim, W Park, J Park, D Kim, J Jang, H Jeong, S Hong, T Lee Nanotechnology 25 (15), 155201, 2014 | 67 | 2014 |
| Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields J Pak, Y Jang, J Byun, K Cho, TY Kim, JK Kim, BY Choi, J Shin, Y Hong, ... ACS nano 12 (7), 7109-7116, 2018 | 65 | 2018 |
| Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure J Pak, I Lee, K Cho, JK Kim, H Jeong, WT Hwang, GH Ahn, K Kang, ... ACS nano 13 (8), 9638-9646, 2019 | 58 | 2019 |
| Origin of the quasi-quantized Hall effect in ZrTe5 S Galeski, T Ehmcke, R Wawrzyńczak, PM Lozano, K Cho, A Sharma, ... Nature communications 12 (1), 3197, 2021 | 54 | 2021 |
| Long-range supercurrents through a chiral non-collinear antiferromagnet in lateral Josephson junctions KR Jeon, BK Hazra, K Cho, A Chakraborty, JC Jeon, H Han, ... Nature materials 20 (10), 1358-1363, 2021 | 52 | 2021 |
| Ultrasensitive Photodetection in MoS2 Avalanche Phototransistors J Seo, JH Lee, J Pak, K Cho, JK Kim, J Kim, J Jang, H Ahn, SC Lim, ... Advanced science 8 (19), 2102437, 2021 | 51 | 2021 |
| Reduced dopant-induced scattering in remote charge-transfer-doped MoS2 field-effect transistors J Jang, JK Kim, J Shin, J Kim, KY Baek, J Park, S Park, YD Kim, ... Science advances 8 (38), eabn3181, 2022 | 49 | 2022 |
TAKHEE LEESeoul National University, Koreasnu.ac.kr의 이메일 확인됨
