Xinjun Liu (刘新军)
Xinjun Liu (刘新军)
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Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications
X Cao, X Li, X Gao, W Yu, X Liu, Y Zhang, L Chen, X Cheng
Journal of Applied Physics 106 (7), 073723-073723-5, 2009
Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications
X Liu, SM Sadaf, M Son, J Shin, J Park, J Lee, S Park, H Hwang
Nanotechnology 22 (47), 475702, 2011
All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature
X Cao, X Li, X Gao, X Liu, C Yang, R Yang, P Jin
Journal of Physics D: Applied Physics 44 (25), 255104, 2011
Ultrathin (< 10nm) Nb2O5/NbO2 Hybrid Memory with Both Memory and Selector Characteristics for High Density 3D Vertically Stackable RRAM Applications
S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ...
Int. VLSI, pp155-156, 2012
Co-Occurrence of Threshold Switching and Memory Switching inCells for Crosspoint Memory Applications
X Liu, SM Sadaf, M Son, J Park, J Shin, W Lee, K Seo, D Lee, H Hwang
IEEE Electron Device Letters 33 (2), 236-238, 2012
Threshold current reduction for the metal–insulator transition in NbO2− x-selector devices: the effect of ReRAM integration
SK Nandi, X Liu, DK Venkatachalam, RG Elliman
Journal of Physics D: Applied Physics 48 (19), 195105, 2015
Effects of the compliance current on the resistive switching behavior of TiO 2 thin films
X Cao, XM Li, XD Gao, YW Zhang, XJ Liu, Q Wang, LD Chen
Applied Physics A: Materials Science & Processing 97 (4), 883-887, 2009
Resistive switching characteristics and mechanism of thermally grown WOx thin films
KP Biju, X Liu, M Siddik, S Kim, J Shin, I Kim, A Ignatiev, H Hwang
Journal of Applied Physics 110 (6), 064505, 2011
Self-Selective Characteristics of Nanoscale VOx Devices for High-Density ReRAM Applications
M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ...
Electron Device Letters, IEEE 33 (5), 718-720, 2012
The polarity origin of the bipolar resistance switching behaviors in junctions
R Yang, XM Li, WD Yu, XD Gao, DS Shang, XJ Liu, X Cao, Q Wang, ...
Applied Physics Letters 95 (7), 072105, 2009
Reduced Threshold Current in NbO₂ Selector by Engineering Device Structure
X Liu, SK Nandi, DK Venkatachalam, K Belay, S Song, RG Elliman
Electron Device Letters, IEEE, 2014
Threshold switching and electrical self-oscillation in niobium oxide films
X Liu, S Li, SK Nandi, DK Venkatachalam, RG Elliman
Journal of Applied Physics 120 (12), 124102, 2016
Complementary resistive switching in niobium oxide-based resistive memory devices
X Liu, SM Sadaf, S Park, S Kim, E Cha, D Lee, GY Jung, H Hwang
IEEE Electron Device Letters 34 (2), 235-237, 2013
Engineering electrodeposited ZnO films and their memristive switching performance
AS Zoolfakar, R Ab Kadir, RA Rani, S Balendhran, X Liu, E Kats, ...
Physical Chemistry Chemical Physics 15 (25), 10376-10384, 2013
High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structures
S Li, X Liu, SK Nandi, DK Venkatachalam, RG Elliman
Applied Physics Letters 106 (21), 212902, 2015
ECS Solid State Letters, 1
X Liu, SM Sadaf, S Kim, KP Biju, X Cao, M Son, SH Choudhury, GY Jung, ...
Q35, 2012
Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices
KP Biju, XJ Liu, EM Bourim, I Kim, S Jung, M Siddik, J Lee, H Hwang
Journal of Physics D: Applied Physics 43, 495104, 2010
Low programming voltage resistive switching in reactive metal/polycrystalline Pr0. 7Ca0. 3MnO3 devices
X Liu, KP Biju, EM Bourim, S Park, W Lee, J Shin, H Hwang
Solid State Communications 150 (45-46), 2231-2235, 2010
Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices
SM Sadaf, X Liu, M Son, S Park, SH Choudhury, E Cha, M Siddik, J Shin, ...
physica status solidi (a) 209 (6), 1179–1183, 2012
Resistive RAM, method for fabricating the same, and method for driving the same
H Hwang, X Liu, MW Son
US Patent 9,117,513, 2015
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