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Ali Naderi
Ali Naderi
Associate professor, Imam Komeini International University (IKIU)
Verified email at eng.ikiu.ac.ir
Title
Cited by
Cited by
Year
Multiplierless implementation of noisy Izhikevich neuron with low-cost digital design
S Haghiri, A Zahedi, A Naderi, A Ahmadi
IEEE transactions on biomedical circuits and systems 12 (6), 1422-1430, 2018
482018
Temperature dependence of electrical characteristics of carbon nanotube field‐effect transistors: a quantum simulation study
A Naderi, SM Noorbakhsh, H Elahipanah
Journal of Nanomaterials 2012 (1), 532625, 2012
432012
Theoretical analysis of a novel dual gate metal–graphene nanoribbon field effect transistor
A Naderi
Materials Science in Semiconductor Processing 31, 223-228, 2015
362015
LDC–CNTFET: a carbon nanotube field effect transistor with linear doping profile channel
A Naderi, P Keshavarzi, AA Orouji
Superlattices and Microstructures 50 (2), 145-156, 2011
302011
High speed and low digital resources implementation of Hodgkin-Huxley neuronal model using base-2 functions
S Haghiri, A Naderi, B Ghanbari, A Ahmadi
IEEE Transactions on Circuits and Systems I: Regular Papers 68 (1), 275-287, 2020
272020
Improving band-to-band tunneling in a tunneling carbon nanotube field effect transistor by multi-level development of impurities in the drain region
A Naderi, M Ghodrati
The European Physical Journal Plus 132, 1-11, 2017
262017
Improvement in the performance of SOI-MESFETs by T-shaped oxide part at channel region: DC and RF characteristics
A Naderi, F Heirani
Superlattices and Microstructures 111, 1022-1033, 2017
262017
Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions
A Naderi
Journal of Computational Electronics 15, 347-357, 2016
262016
Novel carbon nanotube field effect transistor with graded double halo channel
A Naderi, P Keshavarzi
superlattices and Microstructures 51 (5), 668-679, 2012
252012
Electrically-activated source extension graphene nanoribbon field effect transistor: novel attributes and design considerations for suppressing short channel effects
A Naderi, P Keshavarzi
Superlattices and Microstructures 72, 305-318, 2014
242014
A novel SOI-MESFET with parallel oxide-metal layers for high voltage and radio frequency applications
H Mohammadi, A Naderi
AEU-International Journal of Electronics and Communications 83, 541-548, 2018
232018
Methods in improving the performance of carbon nanotube field effect transistors
A Naderi, BA Tahne
ECS Journal of Solid State Science and Technology 5 (12), M131, 2016
232016
Modeling and simulation of combinational CMOS logic circuits by ANFIS
M Hayati, A Rezaei, M Seifi, A Naderi
Microelectronics Journal 41 (7), 381-387, 2010
232010
Cut off frequency variation by ambient heating in tunneling pin CNTFETs
A Naderi, M Ghodrati
ECS Journal of Solid State Science and Technology 7 (2), M6, 2018
202018
Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region
A Naderi
Superlattices and Microstructures 89, 170-178, 2016
192016
The effects of source/drain and gate overlap on the performance of carbon nanotube field effect transistors
A Naderi, P Keshavarzi
Superlattices and Microstructures 52 (5), 962-976, 2012
192012
Proposal of a doping-less tunneling carbon nanotube field-effect transistor
M Ghodrati, A Mir, A Naderi
Materials Science and Engineering: B 265, 2021
182021
New structure of tunneling carbon nanotube FET with electrical junction in part of drain region and step impurity distribution pattern
M Ghodrati, A Mir, A Naderi
AEU-International Journal of Electronics and Communications 117, 153102, 2020
182020
T-CNTFET with gate-drain overlap and two different gate metals: a novel structure with increased saturation current
A Naderi, BA Tahne
ECS Journal of Solid State Science and Technology 5 (8), M3032, 2016
182016
A novel SOI-MESFET with symmetrical oxide boxes at both sides of gate and extended drift region into the buried oxide
A Naderi, F Heirani
AEU-International Journal of Electronics and Communications 85, 91-98, 2018
172018
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