| Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ... Nature materials 5 (10), 810-816, 2006 | 848 | 2006 |
| Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO T Koida, SF Chichibu, A Uedono, A Tsukazaki, M Kawasaki, T Sota, ... Applied Physics Letters 82 (4), 532-534, 2003 | 286 | 2003 |
| Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation … SF Chichibu, A Uedono, T Onuma, T Sota, BA Haskell, SP DenBaars, ... Applied Physics Letters 86 (2), 2005 | 177 | 2005 |
| The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN SF Chichibu, A Uedono, K Kojima, H Ikeda, K Fujito, S Takashima, M Edo, ... Journal of applied physics 123 (16), 2018 | 153 | 2018 |
| Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects SF Chichibu, T Onuma, M Kubota, A Uedono, T Sota, A Tsukazaki, ... Journal of applied physics 99 (9), 2006 | 131 | 2006 |
| Defects in ZnO thin films grown on substrates probed by a monoenergetic positron beam A Uedono, T Koida, A Tsukazaki, M Kawasaki, ZQ Chen, SF Chichibu, ... Journal of applied physics 93 (5), 2481-2485, 2003 | 128 | 2003 |
| Radiative and nonradiative processes in strain-free films studied by time-resolved photoluminescence and positron annihilation techniques T Onuma, SF Chichibu, A Uedono, T Sota, P Cantu, TM Katona, ... Journal of applied physics 95 (5), 2495-2504, 2004 | 118 | 2004 |
| Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams A Uedono, SF Chichibu, ZQ Chen, M Sumiya, R Suzuki, T Ohdaira, ... Journal of Applied Physics 90 (1), 181-186, 2001 | 118 | 2001 |
| Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0. 6Ga0. 4N films grown on AlN templates by … SF Chichibu, H Miyake, Y Ishikawa, M Tashiro, T Ohtomo, K Furusawa, ... Journal of Applied Physics 113 (21), 2013 | 115 | 2013 |
| Exciton–polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO SF Chichibu, A Uedono, A Tsukazaki, T Onuma, M Zamfirescu, A Ohtomo, ... Semiconductor science and technology 20 (4), S67, 2005 | 96 | 2005 |
| Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates M Oshima, T Tanimura, Z Liu, S Toyoda, H Kamada, K Ikeda, ... Applied Physics Letters 95, 2009 | 95* | 2009 |
| Effect of La doping on the lattice defects and photoluminescence properties of CuO LV Devi, T Selvalakshmi, S Sellaiyan, A Uedono, K Sivaji, S Sankar Journal of Alloys and Compounds 709, 496-504, 2017 | 91 | 2017 |
| Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation A Uedono, S Ishibashi, S Keller, C Moe, P Cantu, TM Katona, DS Kamber, ... Journal of Applied Physics 105 (5), 2009 | 90 | 2009 |
| Synthesis, defect characterization and photocatalytic degradation efficiency of Tb doped CuO nanoparticles LV Devi, S Sellaiyan, T Selvalakshmi, HJ Zhang, A Uedono, K Sivaji, ... Advanced Powder Technology 28 (11), 3026-3038, 2017 | 88 | 2017 |
| Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy T Koyama, M Sugawara, T Hoshi, A Uedono, JF Kaeding, R Sharma, ... Applied physics letters 90 (24), 2007 | 88 | 2007 |
| Study of oxygen vacancies in SrTiO3 by positron annihilation A Uedono, K Shimayama, M Kiyohara, ZQ Chen, K Yamabe Journal of applied physics 92 (5), 2697-2702, 2002 | 87 | 2002 |
| Brightness enhancement method for a high-intensity positron beam produced by an electron accelerator N Oshima, R Suzuki, T Ohdaira, A Kinomura, T Narumi, A Uedono, ... Journal of Applied Physics 103 (9), 2008 | 85 | 2008 |
| Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate K Kojima, S Takashima, M Edo, K Ueno, M Shimizu, T Takahashi, ... Applied Physics Express 10 (6), 061002, 2017 | 84 | 2017 |
| Time-resolved photoluminescence, positron annihilation, and Al0. 23Ga0. 77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN … SF Chichibu, K Hazu, Y Ishikawa, M Tashiro, H Namita, S Nagao, K Fujito, ... Journal of Applied Physics 111 (10), 2012 | 79 | 2012 |
| Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy SF Chichibu, A Setoguchi, A Uedono, K Yoshimura, M Sumiya Applied Physics Letters 78 (1), 28-30, 2001 | 76 | 2001 |
Selvakumar SellaiyanUniversity of Tsukubau.tsukuba.ac.jp의 이메일 확인됨
