| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 666 | 2019 |
| Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory A Mehonic, M Buckwell, L Montesi, L Garnett, S Hudziak, S Fearn, ... Journal of Applied Physics 117 (12), 2015 | 139 | 2015 |
| Committee machines—a universal method to deal with non-idealities in memristor-based neural networks D Joksas, P Freitas, Z Chai, WH Ng, M Buckwell, C Li, WD Zhang, Q Xia, ... Nature communications 11 (1), 4273, 2020 | 88 | 2020 |
| Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices A Mehonic, MS Munde, WH Ng, M Buckwell, L Montesi, M Bosman, ... Microelectronic Engineering 178, 98-103, 2017 | 87 | 2017 |
| Nanoscale transformations in metastable, amorphous, silicon-rich silica A Mehonic, M Buckwell, L Montesi, MS Munde, D Gao, S Hudziak, ... Advanced Materials 28 (34), 7486-7493, 2016 | 78 | 2016 |
| Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM M Buckwell, L Montesi, S Hudziak, A Mehonic, AJ Kenyon Nanoscale 7 (43), 18030-18035, 2015 | 77 | 2015 |
| Simulation of inference accuracy using realistic RRAM devices A Mehonic, D Joksas, WH Ng, M Buckwell, AJ Kenyon Frontiers in neuroscience 13, 593, 2019 | 75 | 2019 |
| Intrinsic resistance switching in amorphous silicon suboxides: the role of columnar microstructure MS Munde, A Mehonic, WH Ng, M Buckwell, L Montesi, M Bosman, ... Scientific reports 7 (1), 9274, 2017 | 62 | 2017 |
| Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices Y Yang, Y Takahashi, A Tsurumaki-Fukuchi, M Arita, M Moors, M Buckwell, ... Journal of Electroceramics 39, 73-93, 2017 | 38 | 2017 |
| Investigation of resistance switching in SiOx RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator T Sadi, A Mehonic, L Montesi, M Buckwell, A Kenyon, A Asenov Journal of Physics: Condensed Matter 30 (8), 084005, 2018 | 32 | 2018 |
| Spike-timing dependent plasticity in unipolar silicon oxide RRAM devices K Zarudnyi, A Mehonic, L Montesi, M Buckwell, S Hudziak, AJ Kenyon Frontiers in Neuroscience 12, 57, 2018 | 27 | 2018 |
| Microscopic and spectroscopic analysis of the nature of conductivity changes during resistive switching in silicon‐rich silicon oxide M Buckwell, L Montesi, A Mehonic, O Reza, L Garnett, M Munde, ... physica status solidi (c) 12 (1‐2), 211-217, 2015 | 27 | 2015 |
| The battery failure databank: Insights from an open-access database of thermal runaway behaviors of Li-ion cells and a resource for benchmarking risks DP Finegan, J Billman, J Darst, P Hughes, J Trillo, M Sharp, A Benson, ... Journal of Power Sources 597, 234106, 2024 | 24 | 2024 |
| On the limits of scalpel AFM for the 3D electrical characterization of nanomaterials S Chen, L Jiang, M Buckwell, X Jing, Y Ji, E Grustan‐Gutierrez, F Hui, ... Advanced Functional Materials 28 (52), 1802266, 2018 | 24 | 2018 |
| The interplay between structure and function in redox-based resistance switching AJ Kenyon, MS Munde, WH Ng, M Buckwell, D Joksas, A Mehonic Faraday discussions 213, 151-163, 2019 | 23 | 2019 |
| Nanosecond analog programming of substoichiometric silicon oxide resistive RAM L Montesi, M Buckwell, K Zarudnyi, L Garnett, S Hudziak, A Mehonic, ... IEEE Transactions on Nanotechnology 15 (3), 428-434, 2016 | 20 | 2016 |
| X-ray spectromicroscopy investigation of soft and hard breakdown in RRAM devices D Carta, P Guttmann, A Regoutz, A Khiat, A Serb, I Gupta, A Mehonic, ... Nanotechnology 27 (34), 345705, 2016 | 18 | 2016 |
| Advanced physical modeling of SiOx resistive random access memories T Sadi, L Wang, D Gao, A Mehonic, L Montesi, M Buckwell, A Kenyon, ... 2016 International Conference on Simulation of Semiconductor Processes and …, 2016 | 17 | 2016 |
| Roadmap to neuromorphic computing with emerging technologies A Mehonic, D Ielmini, K Roy, O Mutlu, S Kvatinsky, ... APL Materials 12 (10), 2024 | 16 | 2024 |
| High-performance resistance switching memory devices using spin-on silicon oxide WH Ng, A Mehonic, M Buckwell, L Montesi, AJ Kenyon IEEE Transactions on Nanotechnology 17 (5), 884-888, 2018 | 15 | 2018 |
Adnan MehonicAssociate Professor, University College Londonucl.ac.uk의 이메일 확인됨
